Compounds having semiconducting properties and related compositions and devices
Disclosed are new compounds having semiconducting properties. Such compounds can be processed into thin film semiconductors that exhibit high carrier mobility and/or good current modulation characteristics.
1. A compound selected from the group consisting of:
wherein:
R 1 is a C 1-40 alkyl or haloalkyl group.
2. The compound of claim 1 , wherein R 1 is a branched C 3-20 alkyl or haloalkyl group.
3. The compound of claim 1 , wherein R 1 is a branched C 3-20 alkyl group.
4. The compound of claim 1 , wherein R 1 is CHR′R″, wherein R′ is a linear C 3-12 alkyl or haloalkyl group; and R″ is selected from CH 3 , CF 3 , C 2 H 5 , CH 2 CF 3 , CF 2 CH 3 , and C 2 F 5 .
5. A thin film semiconductor comprising a compound of claim 1 .
6. A composite comprising a substrate and the thin film semiconductor of claim 5 deposited on the substrate.
7. An electronic device, an optical device, or an optoelectronic device comprising the thin film semiconductor of claim 5 .
8. A field effect transistor device comprising a source electrode, a drain electrode, a gate electrode, and the thin film semiconductor of claim 5 in contact with a dielectric material.
9. The field effect transistor device of claim 8 , wherein the field effect transistor has a structure selected from top-gate bottom-contact structure, bottom-gate top-contact structure, top-gate top-contact structure, and bottom-gate bottom-contact structure.
10. The field effect transistor device of claim 8 , wherein the dielectric material comprises an organic dielectric material.
11. The field effect transistor device of claim 8 , wherein the dielectric material comprises an inorganic dielectric material or a hybrid organic/inorganic dielectric material.
12. An electroluminescent display device comprising a plurality of field effect transistors according to claim 8 .
13. An organic light-emitting transistor comprising a source electrode, a drain electrode, a gate electrode, and an active layer in contact with a dielectric material, wherein the active layer comprises a compound of claim 1 .
14. The organic light-emitting transistor of claim 13 , wherein the active layer further comprises a second semiconducting compound different from the compound of claim 1 .
15. The organic light-emitting transistor of claim 13 , wherein the active layer further comprises a light-emitting compound different from the compound of claim 1 .
16. The device of claim 7 , wherein the thin film semiconductor comprises the compound
wherein R 1 is a branched C 3-20 alkyl group.
17. The device of claim 7 , wherein the thin film semiconductor comprises the compound
wherein R 1 is a branched C 3-20 alkyl group.
18. The device of claim 7 , wherein the thin film semiconductor comprises the compound
wherein R 1 is a branched C 3-20 alkyl group.
19. The device of claim 7 , wherein the thin film semiconductor comprises the compound
wherein R 1 and R 2 independently a branched C 3-20 alkyl group.
20. The device of claim 7 , wherein the thin film semiconductor comprises the compound
wherein R 1 and R 2 independently a branched C 3-20 alkyl group.