Graphene sensor

1. A method for forming a sensor, the method comprising:

forming a channel in a substrate;

forming a sacrificial layer in the channel;

forming a gate dielectric layer on the substrate and the sacrificial layer, and a graphene layer on the gate dielectric layer;

forming a source region on the gate dielectric layer, the source region also in contact with a first end of the graphene layer;

forming a drain region on the gate dielectric layer, the drain region also in contact with a second end of the graphene layer;

removing the sacrificial layer from the channel, wherein the channel comprises a physical opening formed in the substrate so as to define a gap between a bottom surface of the gate dielectric layer and a top surface of the substrate; and

forming a first cavity in communication with a first end of the channel, and forming a second cavity in communication with a second end of the channel opposite the first end so as to define a fluid flow path comprising the first cavity, the channel, and the second cavity.

2. The method of claim 1 , further comprising disposing a capping layer on the substrate, the graphene layer, the source region, the drain region and the sacrificial layer prior to removing the sacrificial layer from the channel, the first cavity and the second cavity being formed in the capping layer.

3. The method of claim 2 , further comprising removing portions of the capping layer to expose the source region, the drain region, and a portion of the sacrificial layer prior to removing the sacrificial layer from the channel.

4. The method of claim 1 , wherein the graphene layer includes a graphene tube.

5. The method of claim 1 , wherein the sacrificial layer includes SiGe.

6. The method of claim 1 , wherein a longitudinal axis of the channel is arranged orthogonally to a longitudinal axis that connects the source and drain regions.

7. The method of claim 1 , wherein the substrate is a buried oxide (BOX) substrate.

8. A method for forming a sensor, the method comprising:

forming a plurality of channels in a substrate, each of the plurality of channels having a longitudinal axis along a first direction;

forming a sacrificial layer in the plurality of channels;

for each of the plurality of channels, forming a plurality of gate dielectric layers on the substrate and the sacrificial layer, each of the gate dielectric layers having a longitudinal axis along a second direction orthogonal to the first direction;

forming a graphene layer on each gate dielectric layer;

for each gate dielectric layer, forming a source region on the gate dielectric layer, the source region also in contact with a first end of the graphene layer, and forming drain region on the gate dielectric layer, the drain region also in contact with a second end of the graphene layer;

forming a capping layer on the exposed substrate, graphene layer, source region and drain region;

removing the sacrificial layer from each channel, wherein each channel comprises a physical opening formed in the substrate so as to define a gap between a bottom surface of the gate dielectric layer and a top surface of the substrate; and

for each channel, forming a first cavity in the capping layer communicative with the channel, and forming a second capping layer in the channel communicative with the channel so as to define a fluid flow path comprising the first cavity, the channel, and the second cavity.

9. The method of claim 8 , wherein the graphene layer includes a graphene tube.

10. The method of claim 8 , wherein the substrate is a buried oxide (BOX) substrate.