High density capacitor array patterns

1. A method comprising:

masking a substrate with a masking pattern that includes a plurality of masked regions, each of the masked regions having a perimeter that includes N protrusions that define N recessed regions between the N protrusions, wherein each of the N recessed regions of each of the plurality of masked regions receives one protrusion from an adjacent one of the plurality of masked regions, wherein each of the N protrusions of each of the plurality of masked regions includes additional protrusions, wherein the N protrusions and the additional protrusions define a fractal-like pattern, and wherein N is an integer greater than two; and

etching the substrate to define a plurality of pillars that project from a surface of the substrate, each of the plurality of pillars having the perimeter.

2. The method of claim 1 , further comprising fabricating a thin-film capacitor over the plurality of pillars.

3. The method of claim 2 , further comprising:

depositing a first electrode of the thin-film capacitor in a conformal layer over the plurality of pillars;

depositing a dielectric material of the thin-film capacitor in a conformal layer over the first electrode; and

depositing a second electrode of the thin-film capacitor over the dielectric material.

4. A thin-film device system comprising:

a substrate; and

a plurality of pillars that project from a surface of the substrate, each of the plurality of pillars having a perimeter that includes N protrusions that define N recessed regions between the N protrusions, wherein each of the N recessed regions of each of the plurality of pillars receives one protrusion from an adjacent one of the plurality of pillars,

wherein each of the N protrusions of each of the plurality of pillars includes additional protrusions,

wherein the N protrusions and the additional protrusions define a fractal-like pattern, and

wherein N is an integer greater than two.

5. The thin-film device system of claim 4 , further comprising a thin-film capacitor fabricated over the plurality of pillars.

6. The thin-film device system of claim 5 , wherein the thin-film capacitor comprises:

a first electrode deposited in a conformal layer over the plurality of pillars;

a dielectric deposited in a conformal layer over the first electrode; and

a second electrode deposited over the dielectric.

7. The thin-film device system of claim 4 , wherein each of the N protrusions includes a middle-arm region, and wherein the middle-arm region includes at least one of the additional protrusions.

8. The thin-film device system of claim 7 , wherein each of the N protrusions includes an end region, and wherein the end region includes at least one of the additional protrusions.

9. The thin-film device system of claim 4 , wherein each of the N protrusions includes an end region, and wherein the end region includes at least one of the additional protrusions.

10. The thin-film device system of claim 4 , wherein N equal four.

11. The thin-film device system of claim 4 , wherein the N protrusions comprise at least one of a rectangular shape or a curvilinear shape.

12. The thin-film device system of claim 4 , wherein the additional protrusions comprise at least one of a rectangular shape or a curvilinear shape.

13. The thin-film device system of claim 4 , wherein the perimeter of each of the plurality of pillars defines a center region from which the N protrusions protrude.

14. The thin-film device system of claim 13 , wherein the N protrusions are substantially equally spaced around the center region.

15. The thin-film device system of claim 4 , wherein each of the plurality of pillars includes an axis of symmetry.

16. The thin-film device system of claim 4 , wherein each of the plurality of pillars includes four axes of symmetry.