Silicon carbide substrate and method of manufacturing silicon carbide substrate

1. A silicon carbide substrate comprising:

a main surface having a circular or elliptical plane shape and being inclined at not less than 50° and not more than 65° in a <1-100> direction as well as at not less than −10° and not more than 10° in a <11-20> direction with respect to a {0001} plane;

a first orientation flat parallel to the <11-20> direction; and

a second orientation flat being in a direction intersecting said first orientation flat and being different from said first orientation flat in length.

2. The silicon carbide substrate according to claim 1 , wherein

said second orientation flat is orthogonal to said first orientation flat.

3. The silicon carbide substrate according to claim 1 , wherein

side surfaces including said first and second orientation flats, respectively, are inclined at not less than −10° and not more than 10° in a direction perpendicular to said main surface.

4. A silicon carbide substrate comprising a main surface having a rectangular plane shape and being inclined at not less than 50° and not more than 65° in a <1-100> direction as well as at not less than −10° and not more than 10° in a <11-20> direction with respect to a {0001} plane,

said main surface including

a first side parallel to the <11-20> direction,

a second side in a direction perpendicular to said first side, and

a third side connecting said first side to said second side, wherein a length of said third side projected in a direction in which said first side extends is different from a length of said third side projected in a direction in which said second side extends.

5. A silicon carbide substrate comprising a main surface having a rectangular plane shape and being inclined at not less than 50° and not more than 65° in a <1-100> direction as well as at not less than −10° and not more than 10° in a <11-20> direction with respect to a {0001} plane,

said main surface including

a first side parallel to the <11-20> direction,

a second side in a direction perpendicular to said first side, and

a mark formed in vicinity of a corner where said first side is connected to said second side.

6. The silicon carbide substrate according to claim 5 , wherein

said mark is a laser-irradiated mark, or a scratch by a diamond pen.

7. The silicon carbide substrate according to claim 5 , wherein

said first side is different from said second side in length.

8. The silicon carbide substrate according to claim 5 , wherein

side surfaces including said first and second sides, respectively, are inclined at not less than −10° and not more than 10° in a direction perpendicular to said main surface.

9. A method of manufacturing a silicon carbide substrate, comprising the steps of:

preparing a silicon carbide ingot;

cutting a silicon carbide substrate including a main surface having a circular or elliptical plane shape and being inclined at not less than 50° and not more than 65° in a <1-100> direction as well as at not less than −10° and not more than 10° in a <11-20> direction with respect to a {0001} plane from said ingot; and

forming a first orientation flat parallel to the <11-20> direction and a second orientation flat being in a direction intersecting said first orientation flat and being different from said first orientation flat in length on said silicon carbide substrate.

10. A method of manufacturing a silicon carbide substrate, comprising the steps of:

preparing a silicon carbide ingot;

forming a first orientation flat parallel to a <11-20> direction and a second orientation flat being in a direction intersecting said first orientation flat and being different from said first orientation flat in length on said ingot; and

cutting a silicon carbide substrate including a main surface having a circular or elliptical plane shape and being inclined at not less than 50° and not more than 65° in a <1-100> direction as well as at not less than −10° and not more than 10° in the <11-20> direction with respect to a {0001} plane from the ingot including said first and second orientation flats.

11. A method of manufacturing a silicon carbide substrate, comprising the steps of:

preparing a silicon carbide ingot; and

cutting a silicon carbide substrate including a main surface having a rectangular plane shape and being inclined at not less than 50° and not more than 65° in a <1-100> direction as well as at not less than −10° and not more than 10° in a <11-20> direction with respect to a {0001} plane,

said silicon carbide substrate being cut from said ingot in said cutting step such that said main surface includes a first side parallel to the <11-20> direction, a second side in a direction perpendicular to said first side, and a third side connecting said first side to said second side, with a length of said third side projected in a direction in which said first side extends being different from a length of said third side projected in a direction in which said second side extends.

12. A method of manufacturing a silicon carbide substrate, comprising the steps of

preparing a silicon carbide ingot;

processing said ingot such that said ingot includes a first side parallel to a <11-20> direction, a second side in a direction perpendicular to said first side, and a third side connecting said first side to said second side, with a length of said third side projected in a direction in which said first side extends being different from a length of said third side projected in a direction in which said second side extends, on a plane inclined at not less than 50° and not more than 65° in a <1-100> direction as well as at not less than −10° and not more than 10° in the <11-20> direction with respect to a {0001} plane; and

cutting a silicon carbide substrate including a main surface having a rectangular plane shape and being inclined at not less than 50° and not more than 65° in the <1-100> direction as well as at not less than −10° and not more than 10° in the <11-20> direction with respect to the {0001} plane from said ingot.

13. A method of manufacturing a silicon carbide substrate, comprising the steps of:

preparing a silicon carbide ingot; and

cutting a silicon carbide substrate including a main surface having a rectangular plane shape and being inclined at not less than 50° and not more than 65° in a 1-100> direction as well as at not less than −10° and not more than 10° in a <11-20> direction with respect to a {0001} plane,

said cutting step including the steps of

cutting said silicon carbide substrate from said ingot such that said substrate includes a first side parallel to the <11-20> direction and a second side in a direction perpendicular to said first side, and

forming a mark in vicinity of a corner where said first side is connected to said second side in said main surface.