Thin film transistor, display substrate and method of manufacturing a thin film transistor
A thin film transistor includes a gate electrode, a channel overlapped with the gate electrode, a source electrode contacting the channel, and a drain electrode spaced apart from the source electrode and contacting the channel. The channel includes indium-zinc-tin oxide sourced from a source including a single phase indium-zinc-tin oxide.
1. A thin film transistor comprising:
a gate electrode;
a channel overlapped with the gate electrode and comprising an indium-zinc-tin oxide sourced from a source comprising a single phase indium-zinc-tin oxide;
a source electrode contacting the channel; and
a drain electrode spaced apart from the source electrode and contacting the channel,
wherein the single phase indium-zinc-tin oxide of the source is represented by the following Chemical Formula 1
( x )ZnIn 2 O 4 (1− x )Zn 2 SnO 4 , wherein 0 <x <0.45. Chemical Formula 1
2. The thin film transistor of claim 1 , wherein the indium-zinc-tin oxide of the channel is amorphous.
3. The thin film transistor of claim 1 , wherein the single phase indium-zinc-tin oxide of the source is crystalline.
4. The thin film transistor of claim 1 , wherein the electron mobility of the channel is about 10 cm 2 /V·s to about 40 cm 2 /V·s.
5. A display substrate comprising:
a gate electrode on a base substrate;
a channel overlapped with the gate electrode and comprising indium-zinc-tin oxide sourced from a source comprising a single phase indium-zinc-tin oxide;
a source electrode contacting the channel;
a drain electrode spaced apart from the source electrode and contacting the channel; and
a pixel electrode electrically connected to the drain electrode,
wherein the single phase indium-zinc-tin oxide of the source is represented by the following Chemical Formula 1
( x )ZnIn 2 O 4 (1− x )Zn 2 SnO 4 , wherein 0 <x< 0.45. Chemical Formula 1
6. The display substrate of claim 5 , wherein the indium-zinc-tin oxide of the channel is amorphous.
7. The display substrate of claim 5 , wherein the single phase indium-zinc-tin oxide of the source is crystalline.
8. The display substrate of claim 5 , wherein the electron mobility of the channel is about 10 cm 2 /V·s to about 40 cm 2 /V·s.
9. The display substrate of claim 5 , wherein the gate electrode is between the base substrate and the channel.
10. The display substrate of claim 9 , further comprising an etch stopper on the channel,
wherein the source and the drain electrodes partially cover the etch stopper.
11. The display substrate of claim 5 , wherein
the channel is between the gate electrode and the base substrate, and
the channel, the source electrode and the drain electrode are in a same layer of the display substrate.
12. A method for manufacturing a thin film transistor, the method comprising:
providing an oxide semiconductor layer from a source comprising a single phase indium-zinc-tin oxide; and
patterning the oxide semiconductor layer to form a channel of the thin film transistor,
wherein the single phase indium-zinc-tin oxide of the source is represented by the following Chemical Formula 1
( x )ZnIn 2 O 4 (1− x )Zn 2 SnO 4 wherein 0 <x< 0.45. Chemical Formula 1
13. The method of claim 12 , wherein the providing the oxide semiconductor layer comprises vapor deposition of the source.
14. The method of claim 13 , wherein the single phase indium-zinc-tin oxide of the source is crystalline.
15. The method of claim 14 , further comprising:
annealing the oxide semiconductor layer at a temperature of about 100° C. to about 700° C.
16. A thin film transistor comprising:
a gate electrode;
a channel overlapped with the gate electrode and comprising an indium-zinc-tin oxide sourced from a source comprising a single phase indium-zinc-tin oxide;
a source electrode contacting the channel; and
a drain electrode spaced apart from the source electrode and contacting the channel
wherein the indium-zinc-tin oxide of the channel is represented by the following Chemical Formula 1
( x )ZnIn 2 O 4 (1− x )Zn 2 SnO 4 , wherein 0 <x< 0.45. Chemical Formula 1