Semiconductor device and method for manufacturing semiconductor device
A highly reliable semiconductor device that includes a transistor including an oxide semiconductor is provided. In a semiconductor device which includes a bottom-gate transistor including an oxide semiconductor film, the spin density of the oxide semiconductor film is lower than or equal to 1×10 18 spins/cm 3 , preferably lower than or equal to 1×10 17 spins/cm 3 , further preferably lower than or equal to 1×10 16 spins/cm 3 . The conductivity of the oxide semiconductor film is lower than or equal to 1×10 3 S/cm, preferably lower than or equal to 1×10 2 S/cm, further preferably lower than or equal to 1×10 1 S/cm.
1. A semiconductor device comprising:
a gate electrode layer;
a gate insulating film over the gate electrode layer;
an oxide semiconductor film over the gate insulating film;
source and drain electrode layers over the oxide semiconductor film; and
an oxide insulating film over the source and drain electrode layers, wherein the oxide insulating film is in contact with the oxide semiconductor film and contains nitrogen,
wherein a spin density of the oxide semiconductor film is lower than or equal to 1×10 18 spins/cm 3 .
2. The semiconductor device according to claim 1 , wherein conductivity of the oxide semiconductor film is lower than or equal to 1×10 3 S/cm.
3. The semiconductor device according to claim 1 , wherein a spin density of the oxide semiconductor film is lower than or equal to 1×10 17 spins/cm 3 .
4. The semiconductor device according to claim 1 , wherein conductivity of the oxide semiconductor film is lower than or equal to 1×10 2 S/cm.
5. The semiconductor device according to claim 1 , wherein the oxide semiconductor film comprises a material selected from indium, gallium, zinc, and a combination thereof.
6. The semiconductor device according to claim 1 , wherein at least one of the gate insulating film and the oxide insulating film comprises a silicon oxynitride film in contact with the oxide semiconductor film.
7. A semiconductor device comprising:
an oxide semiconductor film,
wherein a spin density of the oxide semiconductor film is lower than or equal to 1×10 18 spins/cm 3 .
8. The semiconductor device according to claim 7 , wherein conductivity of the oxide semiconductor film is lower than or equal to 1×10 3 S/cm.
9. The semiconductor device according to claim 7 , wherein a spin density of the oxide semiconductor film is lower than or equal to 1×10 17 spins/cm 3 .
10. The semiconductor device according to claim 7 , wherein conductivity of the oxide semiconductor film is lower than or equal to 1×10 2 S/cm.
11. The semiconductor device according to claim 7 , wherein the oxide semiconductor film comprises a material selected from indium, gallium, zinc, and a combination thereof.