Photoelectronic device and image sensor
A photoelectronic device includes a first electrode, a second electrode facing the first electrode, an active layer between the first electrode and the second electrode, and an auxiliary layer between the first electrode and the active layer, the auxiliary layer including a first auxiliary layer including a metal oxide and a metal and a second auxiliary layer including a first organic material having a HOMO energy level of greater than or equal to about 6.0 eV.
1. A photoelectronic device, comprising:
a first electrode;
a second electrode facing the first electrode;
an active layer between the first electrode and the second electrode; and
an auxiliary layer between the first electrode and the active layer, the auxiliary layer including
a first auxiliary layer including a metal oxide and an elemental metal, and
a second auxiliary layer including a first organic material having a HOMO energy level of greater than or equal to about 6.0 eV.
2. The photoelectronic device of claim 1 , wherein
the first auxiliary layer contacts the first electrode, the first electrode including at least one selected from indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), tin oxide (SnO), aluminum tin oxide (AlTO), and fluorine-doped tin oxide (FTO), and
a combined work function of the first electrode and first auxiliary layer is in a range of less than or equal to about 4.3 eV.
3. The photoelectronic device of claim 1 , wherein the metal oxide includes one of molybdenum oxide, tungsten oxide, vanadium oxide, rhenium oxide, nickel oxide, and a combination thereof.
4. The photoelectronic device of claim 1 , wherein the metal includes one of aluminum (Al), calcium (Ca), magnesium (Mg), lithium (Li), gold (Au), silver (Ag), copper (Cu), and a combination thereof.
5. The photoelectronic device of claim 1 , wherein the first auxiliary layer includes the metal in a same amount as the metal oxide or in a higher amount than the metal oxide.
6. The photoelectronic device of claim 1 , wherein the first auxiliary layer has a thickness of about 0.1 nm to about 5 nm.
7. The photoelectronic device of claim 1 , wherein the first organic material has a HOMO energy level of about 6.0 eV to about 7.0 eV.
8. The photoelectronic device of claim 1 , wherein
the active layer includes a second organic material that is the same as or different from the first organic material, and
the first organic material has the same LUMO energy level as the second organic material or a higher LUMO energy level than the second organic material.
9. The photoelectronic device of claim 1 , wherein the first organic material includes one of DCV3T, Bpy-OXD, Bpy-FOXD, 3TPYMB, BP4MPY, BmPyPB, B3PYMPM, Bphen, and a combination thereof.
10. The photoelectronic device of claim 1 , wherein the second auxiliary layer has a thickness of about 1 nm to about 20 nm.
11. The photoelectronic device of claim 1 , further comprising:
a third auxiliary layer between the active layer and the second electrode, the third auxiliary layer including a metal oxide selected from one of molybdenum oxide, tungsten oxide, vanadium oxide, rhenium oxide, nickel oxide, copper oxide, titanium oxide, and a combination thereof.
12. The photoelectronic device of claim 1 , wherein
the second electrode is a light transmission electrode, and
the light transmission electrode includes a light transmittance layer including a metal and a metal oxide in a lesser amount than the metal, the metal including at least one selected from silver (Ag), aluminum (Al), copper (Cu), gold (Au), and an alloy thereof, and the metal oxide including one of molybdenum oxide, tungsten oxide, vanadium oxide, rhenium oxide, niobium oxide, tantalum oxide, titanium oxide, zinc oxide, nickel oxide, copper oxide, cobalt oxide, manganese oxide, chromium oxide, indium oxide, and a combination thereof.
13. The photoelectronic device of claim 12 , wherein the light transmission electrode further comprises:
a transparent auxiliary layer on one side of the light transmission layer, the transparent auxiliary layer including a material having a refractive index of about 1.6 to about 2.5.
14. An image sensor comprising the photoelectronic device of claim 1 .
15. A photoelectronic device, comprising:
a first electrode;
a second electrode facing the first electrode;
an active layer between the first electrode and the second electrode; and
a first auxiliary layer between the first electrode and the active layer, the first auxiliary layer including a metal oxide and an elemental metal, and having a thickness of less than or equal to about 5 nm.
16. The photoelectronic device of claim 15 , wherein
the first auxiliary layer contacts the first electrode, the first electrode including at least one selected from indium tin oxide (ITO), indium zinc oxide (IZO), zinc oxide (ZnO), tin oxide (SnO), aluminum tin oxide (AlTO), and fluorine-doped tin oxide (FTO), and
a combined work function of the first electrode and first auxiliary layer is in a range of less than or equal to about 4.3 eV.
17. The photoelectronic device of claim 15 , wherein
the metal oxide includes one of molybdenum oxide, tungsten oxide, vanadium oxide, rhenium oxide, nickel oxide, and a combination thereof, and
the metal includes one of aluminum (Al), calcium (Ca), magnesium (Mg), lithium (Li), gold (Au), silver (Ag), copper (Cu), and a combination thereof.
18. The photoelectronic device of claim 15 , wherein the first auxiliary layer includes the metal in a same or a higher amount than the metal oxide.
19. The photoelectronic device of claim 15 , further comprising:
at least one of a second auxiliary layer between the first auxiliary layer and the active layer and a third auxiliary layer between the active layer and the second electrode.
20. The photoelectronic device of claim 15 , wherein
the second electrode is a light transmission electrode, and
the light transmission electrode includes a light transmittance layer including a metal and a metal oxide in a lesser amount than the metal, the metal including at least one selected from silver (Ag), aluminum (Al), copper (Cu), gold (Au), and an alloy thereof, and the metal oxide including one of molybdenum oxide, tungsten oxide, vanadium oxide, rhenium oxide, niobium oxide, tantalum oxide, titanium oxide, zinc oxide, nickel oxide, copper oxide, cobalt oxide, manganese oxide, chromium oxide, indium oxide, and a combination thereof.
21. The photoelectronic device of claim 20 , wherein the light transmission electrode further comprises:
a transparent auxiliary layer on one side of the light transmission layer, the transparent auxiliary layer including a material having a refractive index of about 1.6 to about 2.5.
22. An image sensor comprising the photoelectronic device of claim 15 .