IP Library Granted Patent US 9,077,021
Granted Patent B2
US 9,077,021 · App. 12/674,943 · Granted Jul 7, 2015

Removal of impurity phases from electrochemical devices

Inventors: Peter Halvor Larsen (Roskilde, DK); Mogens Mogensen (Lynge, DK); Peter Vang Hendriksen (Hilleroed, DK); Søren Linderoth (Roskilde, DK); Ming Chen (Roskilde, DK)
Assignee: Technical University of Denmark
H01M8/1213H01M4/8663H01M4/8889H01M2008/1293Y02E60/521Y02E60/525
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Quick Facts
Patent No.
US 9,077,021
App. No.
12/674,943
Granted
Jul 7, 2015
Kind
B2
Abstract

The present invention provides a solid oxide cell comprising a support layer, a first electrode layer, an electrolyte layer, and a second cathode layer, wherein at least one of the electrode layers comprises electrolyte material, a catalyst and agglomerated particles selected from the group consisting of alkali oxides, earth alkali oxides and transition metal oxides.

Claims (19)

1. A solid oxide cell comprising a support layer, an anode layer, an electrolyte layer, and a cathode layer,

wherein the cell further comprises an impurity sink layer between the support layer and the anode layer or on top of the cathode layer, or combinations thereof,

wherein the impurity sink layer comprises an electrolyte material selected from the group consisting of doped zirconia, doped ceria, doped gallates and proton conducting electrolytes,

wherein the impurity sink layer comprises agglomerated particles selected from the group consisting of MgO, CaO, CaZrO 3 , SrZrO 3 , BaZrO 3 , and mixtures thereof in an amount of from 1 to 50 vol %, based on the total volume of the respective composition forming the impurity sink layer, and

wherein the agglomerated particles have a particle size in the range of 0.5 to 10 μm, and a pore diameter between 10 nm and 0.5 μm.

2. A method for producing the solid oxide cell of claim 1 , comprising the steps of:

A) providing the support layer;

B) optionally applying a first impurity sink layer on the support layer;

C) applying the anode layer on either the support layer or the optional first impurity sink layer;

D) applying the electrolyte layer on top of the anode layer;

E) applying the cathode layer on top of the electrolyte layer; and

F) optionally applying a second impurity sink layer on top of the cathode layer; and

G) sintering the obtained structure,

wherein the method comprises performing at least one of steps B) or F), and the first and second impurity sink layers each comprise:

an electrolyte material selected from the group consisting of doped zirconia, doped ceria, doped gallates and proton conducting electrolytes; and

agglomerated particles selected from the group consisting of MgO, CaO, CaZrO 3 , SrZrO 3 , BaZrO 3 , and mixtures thereof in an amount of from 1 to 50 vol %, based on the total volume of the respective composition forming the impurity sink layer, the agglomerated particles having a particle size in the range of 0.5 to 10 μm, and a pore diameter between 10 nm and 0.5 μm.

3. The method of claim 2 , wherein step G) is carried out at a temperature of 900 to 1300° C.

4. The method of claim 2 , wherein step G) is carried out in an atmosphere having a relative humidity of at least 30%.

5. The method of claim 2 , wherein step G) is carried out in an atmosphere having a relative humidity of at least 50%.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 1, 2011
From: LARSEN, PETER HALVOR; MOGENSEN, MOGENS; HENDRIKSEN, PETER VANG; LINDEROTH, SOEREN; CHEN, MING
To: TECHNICAL UNIVERSITY OF DENMARK
Reel/Frame 026062/0218 →
Priority Claims (1)
EP 07017097 · Aug 31, 2007 · regional
Continuity (1)
Related Publication 20110198216A1 · Aug 18, 2011