Split biased radio frequency power amplifier with enhanced linearity
A radio frequency (RF) power amplifier (PA) may include a first transistor and a second transistor. A first power cell may be coupled with the first transistor, and a second power cell may be coupled with the second transistor. In embodiments, the first transistor may be scaled to operate at a first current density, while the second transistor may be scaled to operate at a second current density.
1. A power amplifier comprising:
a first transistor scaled to operate at a first current density;
a second transistor scaled to operate at a second current density, the first transistor coupled with the second transistor;
a first power cell comprising a third transistor coupled with the first transistor, the first transistor configured to bias the first power cell; and
a second power cell comprising a plurality of transistors coupled with the second transistor, the second transistor configured to bias the second power cell;
wherein the third transistor includes a first collector, and individual transistors in the plurality of transistors include respective collectors, and the first collector is coupled with the respective collectors.
2. The power amplifier of claim 1 , wherein the first transistor is a bipolar transistor.
3. The power amplifier of claim 2 , wherein the first transistor includes a first base; and
wherein the second transistor is a bipolar transistor that includes a second base coupled with the first base.
4. The power amplifier of claim 1 , wherein the first transistor is a field-effect transistor.
5. The power amplifier of claim 4 , wherein the first transistor includes a first gate; and
wherein the second transistor is a field-effect transistor that includes a second gate coupled with the first gate.
6. The power amplifier of claim 1 , wherein the plurality of transistors comprise fifteen transistors.
7. A method comprising:
coupling an input of a first transistor to a power source, the first transistor scaled based on a first current density;
coupling an input of a second transistor to the power source, the second transistor scaled based on a second current;
coupling a first terminal of the first transistor with a first terminal of the second transistor;
coupling an input of a first power cell including a third transistor with a second terminal of the first transistor; and
coupling an input of a second power cell including a plurality of transistors with a second terminal of the second transistor;
wherein the third transistor includes a first collector, and each transistor in the plurality of transistors respectively include respective collectors, and further comprising coupling the first collector with the respective collectors.
8. The method of claim 7 , wherein the first transistor is a bipolar transistor.
9. The method of claim 8 , wherein the input of the first transistor is a first base;
wherein the second transistor is a bipolar transistor; and
wherein the input of the second transistor is a second base.
10. The method of claim 7 , wherein the first transistor is a field-effect transistor.
11. The method of claim 10 , wherein the input of the first transistor is a first gate;
wherein the second transistor is a field-effect transistor; and
wherein the input of the second transistor is a second gate.
12. The method of claim 7 , wherein the plurality of transistors comprise fifteen transistors.
13. A system comprising:
a power source; and
a power amplifier coupled with the power source, wherein the power amplifier includes:
a first transistor scaled to operate at a first current density, the first transistor coupled with the power source;
a second transistor scaled to operate at a second current, the first transistor coupled with the power source;
a first power cell comprising a third transistor coupled with the first transistor; and
a second power cell comprising a plurality of transistors coupled with the second transistor;
wherein the third transistor includes a first collector, and each transistor in the plurality of transistors respectively include respective collectors, and the first collector is coupled with the respective collectors.
14. The system of claim 13 , wherein the first transistor is a bipolar transistor.
15. The system of claim 14 , wherein the first transistor includes a first base and
wherein the second transistor is a bipolar transistor that includes a second base coupled with the first base.
16. The system of claim 13 , wherein the first transistor is a field-effect transistor.
17. The system of claim 16 , wherein the first transistor includes a first gate and
wherein the second transistor is a field-effect transistor that includes a second gate coupled with the first gate.
18. The system of claim 13 , wherein the plurality of transistors comprise fifteen transistors.
19. The system of claim 13 , further comprising a transceiver coupled with the power amplifier.