Light emitting element unit and method for manufacturing the same, light emitting element package and illuminating device
A light emitting element unit according to the present invention includes a semiconductor light emitting element that has a surface, a back surface, and a side surface, where the surface or the back surface is a light extracting surface from which light generated inside is emitted, a submount which has a bottom wall and a side wall, has a recess portion defined by the bottom wall and the side wall, and supports the semiconductor light emitting element by the bottom wall in a position in which the light extracting surface is directed upward at the recess portion, and has an inclined surface on the side wall, inclined at a predetermined angle with respect to the bottom wall so as to face the side surface of the semiconductor light emitting element, and a light reflecting film formed on the inclined surface of the submount.
1. A light emitting element unit comprising:
a semiconductor light emitting element that has a surface, a back surface, and a side surface, where the surface or the back surface is a light extracting surface from which light generated inside is emitted;
a submount which has a bottom wall and a side wall, has a recess portion defined by the bottom wall and the side wall, and supports the semiconductor light emitting element by the bottom wall in a position in which the light extracting surface is directed upward at the recess portion, and has an inclined surface on the side wall, inclined at a predetermined angle with respect to the bottom wall so as to face the side surface of the semiconductor light emitting element;
a light reflecting film formed on the inclined surface of the submount;
an insulating film formed on the light reflecting film; and
an anode wiring and a cathode wiring which are made of a conductive material capable of reflecting light, and formed on the insulating film, and whose portions above the bottom wall are electrically connected to an anode and a cathode of the semiconductor light emitting element, respectively;
an anode electrode over an opposite surface to the light extracting surface and having a substantially E shape;
an anode bonding layer over the anode electrode and having a substantially E shape;
a cathode electrode over an opposite surface to the light extracting surface and having a substantially I shape; and
a cathode bonding layer over the cathode electrode and having a substantially I shape, wherein
the submount has a rectangular shape including a pair of long sides and a pair of short sides in a plan view,
the anode wiring and the cathode wiring are formed over top portions of the side wall defining the pair of short sides of the submount from the bottom wall through the inclined surfaces along a longitudinal direction of the submount, and
the semiconductor light emitting element is supported by the submount by bonding the anode electrode and the anode bonding layer both having the substantially E shape to each other and bonding the cathode electrode and the cathode bonding layer both having the substantially I shape to each other.
2. The light emitting element unit according to claim 1 , wherein
the submount is formed to have a vessel shape so that the side wall has an annular shape surrounding the bottom wall in a plan view,
the inclined surface is formed to surround the semiconductor light emitting element, and
the light reflecting film is formed along the circumferential direction of the inclined surface.
3. The light emitting element unit according to claim 1 , wherein
the anode electrode and the anode bonding layer have a same width, and
the cathode electrode and the cathode bonding layer have a same width.
4. The light emitting element unit according to claim 1 , wherein
the anode wiring and the cathode wiring are made of a same material as the light reflecting film.
5. The light emitting element unit according to claim 1 , further comprising:
an anode terminal layer over the anode wiring at the top portion of the side wall and made of different materials from the anode wiring; and
a cathode terminal layer over the cathode wiring at the top portion of the side wall and made of different materials from the cathode wiring.
6. The light emitting element unit according to claim 1 , wherein
the inclined surface is inclined at an angle of 30 to 80 degrees with respect to the bottom wall.
7. The light emitting element unit according to claim 1 , wherein
the inclined surface is inclined at an angle of 40 to 70 degrees with respect to the bottom wall.
8. The light emitting element unit according to claim 1 , wherein
the inclined surface is inclined at an angle of 45 to 65 degrees with respect to the bottom wall.
9. The light emitting element unit according to claim 1 , wherein
the inclined surface is inclined at an angle of 50 to 60 degrees with respect to the bottom wall.
10. The light emitting element unit according to claim 1 , wherein the inclined surface is inclined at an angle of 53 to 57 degrees with respect to the bottom wall.
11. The light emitting element unit according to claim 1 , further comprising: a resin phosphor filled in the recess portion.
12. The light emitting element unit according to claim 1 , wherein the light reflecting film is made of aluminum.
13. The light emitting element unit according to claim 1 , wherein the light reflecting film is made of an alloy containing silver, a platinum group metal, and copper.
14. The light emitting element unit according to claim 13 , wherein the platinum group metal is platinum.
15. The light emitting element unit according to claim 13 , wherein the platinum group metal is palladium.
16. The light emitting element unit according to claim 1 , wherein the back surface of the semiconductor light emitting element is a light extracting surface, and the semiconductor light emitting element is supported by the submount in a face-down position in which the surface is directed downward.
17. The light emitting element unit according to claim 1 , wherein the surface of the semiconductor light emitting element is a light extracting surface, and the semiconductor light emitting element is supported by the submount in a face-up position in which the surface is directed upward.
18. A light emitting element package comprising:
a light emitting element unit which includes
a semiconductor light emitting element having a surface, a back surface, and a side surface, where the surface or the back surface is a light extracting surface from which light generated inside is emitted,
a submount which has a bottom wall and a side wall, has a recess portion defined by the bottom wall and the side wall, and supports the semiconductor light emitting element by the bottom wall in a position in which the light extracting surface is directed upward at the recess portion, and has an inclined surface on the side wall, inclined at a predetermined angle with respect to the bottom wall so as to face the side surface of the semiconductor light emitting element,
a light reflecting film formed on the inclined surface of the submount;
an insulating film formed on the light reflecting film;
an anode wiring and a cathode wiring which are made of a conductive material capable of reflecting light, and formed on the insulating film, and whose portions above the bottom wall are electrically connected to an anode and a cathode of the semiconductor light emitting element, respectively;
a base substrate supporting the light emitting element unit; and
a resin case that is formed on the base substrate and surrounds the light emitting element unit;
an anode electrode over an opposite surface to the light extracting surface and having a substantially E shape;
an anode bonding layer over the anode electrode and having a substantially E shape;
a cathode electrode over an opposite surface to the light extracting surface and having a substantially I shape; and
a cathode bonding layer over the cathode electrode and having a substantially I shape, wherein
the submount has a rectangular shape including a pair of long sides and a pair of short sides in a plan view, and
the anode wiring and the cathode wiring are formed over top portions of the side wall defining the pair of short sides of the submount from the bottom wall through the inclined surfaces along a longitudinal direction of the submount, and
the semiconductor light emitting element is supported by the submount by bonding the anode electrode and the anode bonding layer both having the substantially E shape to each other and bonding the cathode electrode and the cathode bonding layer both having the substantially I shape to each other.
19. An illuminating device comprising:
a long and thin support bar; and
light emitting element units
which are aligned along a longitudinal direction of the support bar, and
each of which includes
a semiconductor light emitting element that has a surface, a back surface, and a side surface, where the surface or the back surface is a light extracting surface from which light generated inside is emitted,
a submount which has a bottom wall and a side wall, has a recess portion defined by the bottom wall and the side wall, and supports the semiconductor light emitting element by the bottom wall in a position in which the light extracting surface is directed upward at the recess portion, and has an inclined surface on the side wall, inclined at a predetermined angle with respect to the bottom wall so as to face the side surface of the semiconductor light emitting element,
a light reflecting film formed on the inclined surface of the submount;
an insulating film formed on the light reflecting film;
an anode wiring and a cathode wiring which are made of a conductive material capable of reflecting light, and formed on the insulating film, and whose portions above the bottom wall are electrically connected to an anode and a cathode of the semiconductor light emitting element, respectively;
an anode electrode over an opposite surface to the light extracting surface and having a substantially E shape;
an anode bonding layer over the anode electrode and having a substantially E shape;
a cathode electrode over an opposite surface to the light extracting surface and having a substantially I shape; and
a cathode bonding layer over the cathode electrode and having a substantially I shape, wherein
the submount has a rectangular shape including a pair of long sides and a pair of short sides in a plan view,
the anode wiring and the cathode wiring are formed over top portions of the side wall defining the pair of short sides of the submount from the bottom wall through the inclined surfaces along a longitudinal direction of the submount, and
the semiconductor light emitting element is supported by the submount by bonding the anode electrode and the anode bonding layer both having the substantially E shape to each other and bonding the cathode electrode and the cathode bonding layer both having the substantially I shape to each other.