IP Library › Granted Patent US 9,082,994
Granted Patent B2
US 9,082,994 · App. 14/220,535 · Granted Jul 14, 2015

Light-emitting element, light-emitting device, electronic device, and lighting device

Inventors: Takeyoshi Watabe (Atsugi, JP); Satoshi Seo (Sagamihara, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L51/5012H01L51/5004H01L51/5016H01L51/5036H01L51/0061H01L51/0072H01L51/0074H01L51/0085H01L2251/552
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Quick Facts
Patent No.
US 9,082,994
App. No.
14/220,535
Granted
Jul 14, 2015
Kind
B2
Abstract

Provided is a light-emitting element having a light-emitting layer which contains at least a host material and a plurality of guest materials, where the host material has a lower T1 level than that of at least one of the plurality of guest materials. The emission of the one of the plurality of guest materials exhibits a multicomponent decay curve, and the lifetime thereof is less than or equal to 15 μsec, preferably less than or equal to 10 μsec, more preferably less than or equal to 5 μsec, where the lifetime is defined as a time for the emission to decrease in intensity to 1/100 of its initial intensity.

Claims (63)

1. A light-emitting device comprising:

a first electrode;

a light-emitting layer over the first electrode, the light-emitting layer comprising a host material, a first guest material, and a second guest material; and

a second electrode over the light-emitting layer,

wherein the light-emitting layer comprises a first light-emitting layer and a second light-emitting layer which are in contact with each other,

wherein the host material and the first guest material are included in the first light-emitting layer,

wherein the host material and the second guest material are included in the second light-emitting layer,

wherein a T1 level of the host material is lower than a T1 level of the first guest material and higher than a T1 level of the second guest material, and

wherein a difference in T1 level between the host material and the first guest material is larger than 0 eV and less than or equal to 0.2 eV.

2. The light-emitting device according to claim 1 ,

wherein the first guest material and the second guest material each are an organometallic compound.

3. The light-emitting device according to claim 1 ,

wherein a rate constant of a radiative transition of the second guest material is larger than 5×10 5 sec −1 .

4. The light-emitting device according to claim 1 ,

wherein a rate constant of a non-radiative transition of the host material is smaller than 1×10 2 sec −1 .

5. The light-emitting device according to claim 1 ,

wherein an emission from the light-emitting layer exhibits a multicomponent decay curve, and

wherein a lifetime of the emission is less than or equal to 15 μsec where the lifetime is a time required for the emission to decrease in intensity to 1/100 of an initial value thereof.

6. The light-emitting device according to claim 5 ,

wherein the lifetime of the emission is less than or equal to 10 μsec.

7. The light-emitting device according to claim 5 ,

wherein the lifetime of the emission is less than or equal to 5 μsec.

8. An electronic device comprising the light-emitting device according to claim 1 .

9. A lighting device comprising the light-emitting device according to claim 1 .

10. The light-emitting device according to claim 1 ,

wherein the light-emitting layer further comprises an organic compound,

wherein a T1 level of the organic compound is lower than the T1 level of the first guest material and higher than the T1 level of the second guest material.

11. The light-emitting device according to claim 1 ,

wherein the first light-emitting layer consists of the host material and the first guest material, and

wherein the second light-emitting layer consists of the host material and the second guest material.

12. A light-emitting device comprising:

a first electrode;

a first EL layer over the first electrode;

a charge generation layer over the first EL layer;

a second EL layer over the charge generation layer; and

a second electrode over the second EL layer,

wherein at least one of the first EL layer and the second EL layer comprises a light-emitting layer which comprises a host material, a first guest material, and a second guest material,

wherein the light-emitting layer comprises a first light-emitting layer and a second light-emitting layer which are in contact with each other,

wherein the host material and the first guest material are included in the first light-emitting layer,

wherein the host material and the second guest material are included in the second light-emitting layer,

wherein a T1 level of the host material is lower than a T1 level of the first guest material and higher than a T1 level of the second guest material, and

wherein a difference in T1 level between the host material and the first guest material is larger than 0 eV and less than or equal to 0.2 eV.

13. The light-emitting device according to claim 12 ,

wherein the first guest material and the second guest material each are an organometallic compound.

14. The light-emitting device according to claim 12 ,

wherein a rate constant of a radiative transition of the second guest material is larger than 5×10 5 sec −1 .

15. The light-emitting device according to claim 12 ,

wherein a rate constant of a non-radiative transition of the host material is smaller than 1×10 2 sec −1 .

16. The light-emitting device according to claim 12 ,

wherein an emission from the light-emitting layer exhibits a multicomponent decay curve, and

wherein a lifetime of the emission is less than or equal to 15 μsec where the lifetime is a time required for the emission to decrease in intensity to 1/100 of an initial value thereof.

17. The light-emitting device according to claim 16 ,

wherein the lifetime of the emission is less than or equal to 10 μsec.

18. The light-emitting device according to claim 16 ,

wherein the lifetime of the emission is less than or equal to 5 μsec.

19. An electronic device comprising the light-emitting device according to claim 12 .

20. A lighting device comprising the light-emitting device according to claim 12 .

21. The light-emitting device according to claim 12 ,

wherein the light-emitting layer further comprises an organic compound,

wherein a T1 level of the organic compound is lower than the T1 level of the first guest material and higher than the T1 level of the second guest material.

22. The light-emitting device according to claim 12 ,

wherein the first light-emitting layer consists of the host material and the first guest material, and

wherein the second light-emitting layer consists of the host material and the second guest material.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Mar 20, 2014
From: WATABE, TAKEYOSHI; SEO, SATOSHI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 032486/0478 →
Priority Claims (1)
JP 2013-063634 · Mar 26, 2013 · national
Continuity (1)
Related Publication 20140291642A1 · Oct 2, 2014