Acoustic wave device
An acoustic wave device includes a substrate, a dielectric film formed on the substrate and a pair of IDT electrodes opposing each other provided between the substrate and the dielectric film. At least one of the substrate and the dielectric film is piezoelectric. The IDT electrodes each include an electrode finger that extends in at least one direction. A film thickness of the dielectric film changes in a gap portion between a tip of the electrode finger of one of the IDT electrodes and the other opposing IDT electrode in the direction of extension of the electrode finger.
1. An acoustic wave device comprising:
a substrate;
a dielectric film formed on the substrate; and
a pair of IDT electrodes opposing each other provided between the substrate and the dielectric film,
wherein at least one of the substrate and the dielectric film is piezoelectric,
wherein the IDT electrodes each include an electrode finger that extends in at least one direction,
wherein the dielectric film has a sloped area in a gap portion that is an area between a tip of the electrode finger of one of the IDT electrodes and the other IDT electrode that is opposing to said one of the IDT electrodes in the direction of extension of the electrode finger, so that a film thickness of the dielectric film changes in said gap, and
wherein a film thickness difference caused by the change in the film thickness of the dielectric film in said sloped area is greater than a thickness of the IDT electrodes.
2. The acoustic wave device according to claim 1 , wherein a change in the film thickness of the dielectric film starts outward of one end of the gap portion and ends outward of the other end of the gap portion.
3. The acoustic wave device according to claim 1 , wherein
the IDT electrodes each include a bus bar and an electrode finger connected to the bus bar, and
the film thickness of the dielectric film on the bus bar is different from the film thickness of the dielectric film on the electrode finger.
4. The acoustic wave device according to claim 1 , wherein a film thickness difference H caused by the change in the film thickness of the dielectric film, a slope angle θ formed by the change in the film thickness, and a gap length L of the gap portion in the direction of extension of the electrode fingers have a relationship that satisfies the following formula (1):
θ≦tan−1( H/L ) (1).
5. The acoustic wave device according to claim 1 , wherein in the IDT electrodes, a plurality of electrode fingers are alternately disposed in a propagation direction of acoustic waves and a length over which the plurality of electrode fingers alternate is constant in the propagation direction.
6. Communication device provided with the acoustic wave device according to claim 1 .
7. The acoustic wave device according to claim 1 , wherein the IDT electrodes have an alternate area where a plurality of said electrode fingers are disposed alternately, and said sloped area of the dielectric film that changes the film thickness is provided also in a dummy portion which is not the alternate area of the electrode fingers.