Low-k interconnect structures with reduced RC delay
A method for forming an integrated circuit includes forming a low-k dielectric layer over a semiconductor substrate, etching the low-k dielectric layer to form an opening, forming a dielectric barrier layer covering at least sidewalls of the opening, performing a treatment to improve a wetting ability of the dielectric barrier layer, and filling the opening with a conductive material, wherein the conductive material is in contact with the dielectric barrier layer.
1. A method for forming an integrated circuit, the method comprising:
forming a low-k dielectric layer over a semiconductor substrate;
etching the low-k dielectric layer to form an opening;
forming a dielectric barrier layer covering at least sidewalls of the opening, wherein the dielectric barrier layer comprises α-Terpinene (ATRP);
performing a treatment to the dielectric barrier layer, the treatment forming a treated dielectric barrier layer consisting essentially of dielectric material, wherein process gases used in the step of performing the treatment comprise a nitrogen-containing gas and SiH 4 , wherein after the treatment, a bottom portion of the treated dielectric barrier layer remains at a bottom of the opening;
removing the bottom portion of the treated dielectric barrier layer, and wherein sidewall portions of the treated dielectric barrier layer are not removed; and
after the step of removing the bottom portion of the treated dielectric barrier layer, filling the opening with a conductive material, wherein the conductive material contacts the dielectric material of the treated dielectric barrier layer along substantially the entire sidewall of the opening.
2. The method of claim 1 , wherein the step of performing the treatment comprises:
performing a first treatment step to treat the dielectric barrier layer using the nitrogen-containing gas; and
performing a second treatment step to treat the dielectric barrier layer using process gases comprising SiH 4 .
3. The method of claim 2 , wherein during the second treatment step, the process gases further comprise H 2 .
4. The method of claim 1 , wherein the nitrogen-containing gas is selected from the group consisting essentially of N 2 , NH 3 , and combinations thereof.
5. The method of claim 4 , wherein the process gases further comprise H 2 .
6. The method of claim 1 , wherein the step of performing the treatment comprises plasma-assisted treatment.
7. The method of claim 1 , wherein the dielectric barrier layer has a thickness of between about 10 Å and about 100 Å.
8. The method of claim 1 , wherein the step of performing the treatment is performed after the step of forming the dielectric barrier layer is finished.
9. The method of claim 1 , wherein the conductive material has a top surface substantially coplanar with a top surface of the low-k dielectric layer.
10. A method of forming an integrated circuit, the method comprising:
forming a low-k dielectric layer over a semiconductor substrate;
etching the low-k dielectric layer to form an opening;
forming a dielectric barrier layer comprising α-Terpinene (ATRP) on at least the sidewalls of the opening;
performing a treatment to the dielectric barrier layer, the treatment forming a treated dielectric barrier layer, the treatment comprising process gases comprising SiH 4 , the treated dielectric barrier layer comprising dielectric material throughout the treated dielectric barrier layer, wherein after the treatment, a bottom portion of the treated dielectric barrier layer remains at a bottom of the opening;
removing the bottom portion of the treated dielectric barrier layer, and wherein sidewall portions of the treated dielectric barrier layer are not removed; and
after the step of removing the bottom portion of the treated dielectric barrier layer, filling the opening with a conductive material, the conductive material being in contact with the dielectric material of the treated dielectric barrier layer along substantially the entire sidewall of the opening.
11. The method of claim 10 , wherein the conductive material has a top surface substantially coplanar with a top surface of the low-k dielectric layer.
12. The method of claim 10 , wherein the step of performing the treatment comprises:
performing a first treatment step to treat the dielectric barrier layer using a nitrogen-containing gas; and
performing a second treatment step to treat the dielectric barrier layer using process gases comprising SiH 4 .
13. The method of claim 12 , wherein during the second treatment step, the process gases further comprise H 2 .
14. The method of claim 12 , wherein the nitrogen-containing gas is selected from the group consisting essentially of N 2 , NH 3 , and combinations thereof.
15. The method of claim 14 , wherein the process gases further comprise H 2 .