IP Library Granted Patent US 9,087,995
Granted Patent B2
US 9,087,995 · App. 14/021,796 · Granted Jul 21, 2015

Fullerene-doped nanostructures and methods therefor

Inventors: Ajay Virkar (Stanford, CA); Melburne C. LeMieux (La Honda, CA); Zhenan Bao (Stanford, CA)
Assignee: The Board of Trustees of the Leland Stanford Junior University
H01L51/0048B82Y30/00B82Y40/00C01B31/0273H01L51/0046
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Quick Facts
Patent No.
US 9,087,995
App. No.
14/021,796
Granted
Jul 21, 2015
Kind
B2
Abstract

Nanostructures are doped to set conductivity characteristics. In accordance with various example embodiments, nanostructures such as carbon nanotubes are doped with a halogenated fullerene type of dopant material. In some implementations, the dopant material is deposited from solution or by vapor deposition, and used to dope the nanotubes to increase the thermal and/or electrical conductivity of the nanotubes.

Claims (47)

1. An apparatus comprising:

a semiconducting carbon nanotube-based nanomaterial coupled between circuit nodes; and

a conductive hybrid material including a halogenated fullerene dopant and the carbon nanotube-based nanomaterial, the dopant configured to effect a charge transfer to the carbon nanotube-based nanomaterial, and configured to electrically couple the circuit nodes, the hybrid material exhibiting a conductivity that is higher than a conductivity of the carbon nanotube-based nanomaterial and transparency over 90%.

2. The apparatus of claim 1 , wherein the dopant includes a material selected from the group of C 60 F 18 , C 60 F 24 , C 60 F 36 , and C 60 F 48 , C 60 F 44 and C 70 F 54 .

3. The apparatus of claim 1 , wherein the conductive hybrid material has a resistance value that is an order of magnitude less than a resistance value of the semiconducting carbon nanotube-based nanomaterial, manifests sheet resistance between 60 Ohms and 150 Ohms, and provides the transparency characterized by the sheet resistance at the transparency as set by the halogenated fullerene dopant being preferentially grown on the carbon nanotube-based nanomaterial relative to an underlying substrate upon which the carbon nanotubes are grown.

4. The apparatus of claim 1 , wherein

the semiconducting carbon nanotube-based nanomaterial and the conductive hybrid material are configured and arranged into a nanowire; and

the conductive hybrid material is configured and arranged with the nanowire to render the nanowire more thermally conductive than the semiconducting carbon nanotube-based nanomaterial.

5. The apparatus of claim 1 , wherein

the semiconducting carbon nanotube-based nanomaterial is a carbon nanotube, and

the conductive hybrid material is a sidewall of the carbon nanotube doped with the halogenated fullerene dopant.

6. The apparatus of claim 1 , wherein the semiconducting carbon nanotube-based nanomaterial and the conductive hybrid material are configured and arranged into a nanowire circuit.

7. The apparatus of claim 6 , wherein the nanowire circuit exhibits respective degrees of transparency and conductivity set for touch screens.

8. The apparatus of claim 7 , wherein the degree of transparency is about 96%.

9. The apparatus of claim 6 , wherein the nanowire circuit exhibits respective degrees of transparency and conductivity set for solar cells.

10. The apparatus of claim 9 , wherein the degree of transparency is about 96%.

11. The apparatus of claim 6 , wherein the nanowire circuit manifests sheet resistance between 60 Ohms and 150 Ohms.

12. The apparatus of claim 1 , wherein the dopant includes a material selected from the group of C 60 F 18 , C 60 F 24 , C 60 F 36 .

13. The apparatus of claim 1 , wherein the dopant includes a material selected from the group of C 60 F 48 , C 60 F 44 and C 70 F 54 .

14. The apparatus of claim 1 , wherein

the dopant includes a material selected from the group of C 60 F 18 , C 60 F 24 , C 60 F 36 , and

the semiconducting carbon nanotube-based nanomaterial and the conductive hybrid material are configured and arranged into a nanowire circuit.

15. The apparatus of claim 1 , wherein

the dopant includes a material selected from the group of C 60 F 48 , C 60 F 44 and C 70 F 54 , and

the semiconducting carbon nanotube-based nanomaterial and the conductive hybrid material are configured and arranged into a nanowire circuit.

16. The apparatus of claim 1 , wherein

the semiconducting carbon nanotube-based nanomaterial and the conductive hybrid material are configured and arranged into a nanowire circuit,

the nanowire circuit exhibits respective degrees of transparency and conductivity set for touch screens, and

the dopant includes a material selected from the group of C 60 F 18 , C 60 F 24 , C 60 F 36 .

17. The apparatus of claim 1 , wherein

the semiconducting carbon nanotube-based nanomaterial and the conductive hybrid material are configured and arranged into a nanowire circuit,

the nanowire circuit exhibits respective degrees of transparency and conductivity set for solar cells, and

the dopant includes a material selected from the group of C 60 F 18 , C 60 F 24 , C 60 F 36 .

18. The apparatus of claim 1 , wherein

the semiconducting carbon nanotube-based nanomaterial and the conductive hybrid material are configured and arranged into a nanowire circuit,

the nanowire circuit exhibits respective degrees of transparency and conductivity set for solar cells, and

the dopant includes a material selected from the group of C 60 F 48 , C 60 F 44 and C 70 F 54 .

19. The apparatus of claim 1 , wherein

the dopant includes a material selected from the group of C 60 F 18 , C 60 F 24 , C 60 F 36 , and C 60 F 48 , C 60 F 44 and C 70 F 54 ,

the semiconducting carbon nanotube-based nanomaterial and the conductive hybrid material are configured and arranged into a nanowire circuit, and

the nanowire circuit manifests sheet resistance between 60 Ohms and 150 Ohms.

20. An apparatus comprising:

a sheet having a plurality of connected semiconducting carbon nanotube-based nanomaterial structures; and

a conductive hybrid material including a halogenated fullerene dopant and the carbon nanotube-based nanomaterial structures, the halogenated fullerene dopant and the carbon nanotube-based nanomaterial structures being configured and arranged with each other to

effect a charge transfer from the halogenated fullerene dopant to the carbon nanotube-based nanomaterial structures,

electrically couple the carbon nanotube-based nanomaterial structures, and

provide conductivity of the sheet that is higher than a conductivity of the sheet, absent the charge transfer, to provide a sheet resistance between 60 Ohms and 150 Ohms while also providing a transparency of the sheet that is over 90%.

Assignments (2)
CONFIRMATORY LICENSE Recorded Apr 27, 2015
From: STANFORD UNIVERSITY
To: NATIONAL SCIENCE FOUNDATION
Reel/Frame 035506/0628 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Apr 16, 2015
From: VIRKAR, AJAY; LEMIEUX, MELBURNE C.; BAO, ZHENAN
To: THE BOARD OF TRUSTEES OF THE LELAND STANFORD JUNIOR UNIVERSITY
Reel/Frame 035423/0533 →
Continuity (3)
Division 13011402 · Jan 21, 2011
Provisional Application 61298043 · Jan 25, 2010
Related Publication 20140138612A1 · May 22, 2014