Low cost programmable multi-state device
A one time programmable (OPT) and multiple time programmable (MTP) structure is constructed in a back end of line (BEOL) process using only one, two or three masks. The OTP/MTP structure can be programmed in one of three states, a pre-programmed high resistance state, and a programmable low resistance state and a programmable very high resistance state. In the programmable low resistance state, a barrier layer is broken down during an anti-fuse programming so that the OTP/MTP structure exhibits resistance in the hundred ohm order of magnitude. In the very high resistance state a conductive fuse is blown open during programming so that the OTP/MTP structure exhibits resistance in the mega-ohm order of magnitude. The OTP/MTP structure may include a magnetic tunnel junction (MTJ) structure or a metal-insulator-metal (MIM) capacitor structure.
1. A back end of line (BEOL) structure, comprising:
a first conductive element of a first conductive layer;
a first via coupled to the first conductive element;
a two-time programmable BEOL structure coupled to the first via, the two-time programmable BEOL structure including a dielectric barrier and a bottom electrode; and
a magnetic tunnel junction (MTJ) cap layer coupled between the first via and the dielectric barrier and/or a top electrode coupled between the first via and the dielectric barrier.
2. The structure of claim 1 , in which the dielectric barrier comprises:
a free layer coupled to the (MTJ) cap layer or coupled to the top electrode;
a barrier layer coupled to the free layer;
a fixed layer coupled to the barrier layer; and
an anti-ferromagnetic (AFM) layer coupled between the bottom electrode and the fixed layer.
3. The structure of claim 1 , further comprising a second via coupled between the bottom electrode and a second conductive element of the first conductive layer.
4. The structure of claim 1 , further comprising:
a bottom contact coupled to the bottom electrode; and
a second conductive element of a second conductive layer coupled to the bottom contact.
5. The structure of claim 1 , in which the two time programmable BEOL structure comprises a metal-insulator-metal capacitor structure.
6. A back end of line (BEOL) structure, comprising:
a first conductive element of a first conductive layer;
a first via coupled to the first conductive element; and
a programmable structure coupled to the first via, the programmable structure including a dielectric barrier and a bottom electrode, in which the bottom electrode comprises a fuse portion between the first via and a second conductive element coupled to the bottom electrode and laterally displaced from the first via, the fuse portion configured to break down in response to a predetermined current.
7. The structure of claim 1 , incorporated into a device selected from a group consisting of a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant (PDA), a fixed location data unit, and a computer.
8. A method of programming a two-time programmable back end of line (BEOL) structure, comprising:
applying a predetermined voltage to a dielectric barrier layer of the two-time programmable BEOL structure, the predetermined voltage being sufficient to break down the dielectric barrier layer; and
applying a predetermined current to the two-time programmable BEOL structure subsequent to applying the predetermined voltage, the predetermined current being sufficient to break down a fuse portion of a bottom electrode of the two-time programmable BEOL structure.
9. A method of programming a one time programmable (OTP) or multiple time programmable (MTP) back end of line (BEOL) structure, comprising:
applying a predetermined voltage to a dielectric barrier layer of the BEOL structure, the predetermined voltage being sufficient to break down the dielectric barrier layer; and
applying the predetermined voltage to a magnetic tunnel junction (MTJ) structure including the dielectric barrier layer or to a metal-insulator-metal (MIM) capacitor structure including the dielectric barrier layer.
10. A method of programming a one time programmable (OTP) or multiple time programmable (MTP) back end of line (BEOL) structure, comprising:
applying a predetermined voltage to a dielectric barrier layer of the BEOL structure, the predetermined voltage being sufficient to break down the dielectric barrier layer; and
applying a predetermined current through the dielectric barrier layer subsequent to applying the predetermined voltage, the predetermined current being sufficient to break down a fuse portion of a bottom electrode of the OTP or MTP BEOL structure.
11. The method of claim 8 , further comprising incorporating the OTP or MTP structure into a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant (PDA), a fixed location data unit, and/or a computer.
12. An apparatus for programming a one time programmable (OTP) or multiple time programmable (MTP) back end of line (BEOL) structure, comprising:
means for applying a predetermined voltage to a dielectric barrier layer of the BEOL structure, the predetermined voltage being sufficient to break down the dielectric barrier layer; and
means for applying the predetermined voltage to a magnetic tunnel junction (MTJ) structure including the dielectric barrier layer or to a metal-insulator-metal (MIM) capacitor structure including the dielectric barrier layer.
13. The apparatus of claim 12 , further comprising:
means for applying a predetermined current through the dielectric barrier layer subsequent to applying the predetermined voltage, the predetermined current being sufficient to break down a fuse portion of a bottom electrode of the OTP or MTP BEOL structure.
14. The apparatus of claim 12 , incorporated into a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant (RDA), a fixed location data unit, and/or a computer.
15. A method of programming a one time programmable (OTP) or multiple time programmable (MTP) hack end of line (BEOL) structure, comprising steps for:
applying a predetermined voltage to a dielectric barrier layer of a magnetic tunnel junction (MTJ) structure in the BEOL structure or of a metal-insulator-metal (MIM) capacitor structure in the BEOL structure, the predetermined voltage being sufficient to break down the dielectric barrier layer; and
applying a predetermined current to the multi-time programmable BEOL structure subsequent to applying the predetermined voltage, the predetermined current being sufficient to break down a fuse portion of a bottom electrode of the multi-time programmable BEOL structure.
16. A method of programming a one time programmable (OTP) or multiple time programmable (MTP) back end of line (BEOL) structure, comprising steps for:
applying a predetermined voltage to a dielectric barrier layer of the BEOL structure, the predetermined voltage being sufficient to break down the dielectric barrier layer; and
applying the predetermined voltage to a magnetic tunnel junction (MTJ) structure including the dielectric barrier layer or to a metal-insulator-metal (MIM) capacitor structure including the dielectric barrier layer.
17. The method of claim 15 , further comprising a step of incorporating the OTP or MTP structure into a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant (PDA), a fixed location data unit, and/or a computer.