Semiconductor devices
The present inventive concept provides semiconductor devices that may include a capacitor including a lower electrode, a dielectric layer, and an upper electrode which are sequentially stacked. An electrode-protecting layer may be provided on the capacitor. The upper electrode may include a conductive metal oxide and the electrode-protecting layer may include a sacrificial reaction layer including a metal-hydrogen compound.
1. A semiconductor device comprising:
a capacitor including a lower electrode, a dielectric layer, and an upper electrode that are sequentially stacked; and
an electrode-protecting layer on the capacitor,
wherein the upper electrode includes a conductive metal oxide; and
wherein the electrode-protecting layer includes a sacrificial reaction layer including a metal-hydrogen compound and a concentration of hydrogen atoms in the sacrificial reaction layer is in a range of about 0.1 at. % to about 67 at. %.
2. The semiconductor device of claim 1 , wherein the metal-hydrogen compound includes a titanium-hydrogen (Ti—H) compound, a tantalum-hydrogen (Ta—H) compound, a niobium-hydrogen (Nb—H) compound, a titanium-tantalum-hydrogen (Ti—Ta—H) compound, a titanium-niobium-hydrogen (Ti—Nb—H) compound, or a tantalum-niobium-hydrogen (Ta—Nb—H) compound.
3. The semiconductor device of claim 1 , wherein a thickness of the sacrificial reaction layer is in a range of about 50 Å to about 1000 Å.
4. The semiconductor device of claim 1 , wherein the conductive metal oxide includes at least one of RuO 2 , IrO 2 , PtO 2 , or SrRuO 3 .
5. The semiconductor device of claim 1 , wherein the electrode-protecting layer further comprises a buffer layer disposed between the upper electrode and the sacrificial reaction layer.
6. The semiconductor device of claim 1 , wherein the electrode-protecting layer further comprises an etch stop layer disposed on the sacrificial reaction layer, the semiconductor device, further comprising a contact plug connected to the etch stop layer, wherein the contact plug does not penetrate a bottom surface of the etch stop layer.
7. The semiconductor device of claim 1 , wherein the electrode-protecting layer further comprises:
an etch stop layer disposed on the sacrificial reaction layer; and
an oxidation preventing layer disposed between the upper electrode and the etch stop layer.
8. The semiconductor device of claim 7 , wherein the oxidation preventing layer includes at least one of TiN, TiSiN, TaN, or TaSiN.
9. The semiconductor device of claim 7 , wherein the oxidation preventing layer includes a first oxidation preventing layer and a second oxidation preventing layer; and
wherein the sacrificial reaction layer is provided between the first oxidation preventing layer and the second oxidation preventing layer.
10. The semiconductor device of claim 7 , wherein the oxidation preventing layer and the sacrificial reaction layer are alternately and repeatedly stacked between the upper electrode and the etch stop layer.
11. The semiconductor device of claim 1 , wherein the electrode-protecting layer covers a sidewall of the upper electrode.
12. A semiconductor device comprising:
a conductive metal oxide layer on a substrate; and
a sacrificial reaction layer on the conductive metal oxide layer,
wherein the sacrificial reaction layer includes a titanium (Ti), tantalum (Ta), niobium (Nb), or any alloy thereof; and
wherein a thickness of the sacrificial reaction layer is in a range of about 50 Å to about 1000 Å, and a concentration of hydrogen atoms in the sacrificial reaction layer is in a range of about 0.1 at. % to about 67 at. %.
13. The semiconductor device of claim 12 , further comprising:
a buffer layer disposed between the conductive metal oxide layer and the sacrificial reaction layer; and
an etch stop layer disposed on the sacrificial reaction layer.
14. A capacitor comprising:
a lower electrode, a dielectric layer, and an upper electrode that are sequentially stacked; and
an electrode-protecting layer on the upper electrode,
wherein the upper electrode includes a conductive metal oxide; and
wherein the electrode-protecting layer includes a sacrificial reaction layer including a metal-hydrogen compound, and wherein the electrode-protecting layer further comprises a buffer layer disposed between the upper electrode and the sacrificial reaction layer.
15. The capacitor of claim 14 , wherein the metal-hydrogen compound includes a titanium-hydrogen (Ti—H) compound, a tantalum-hydrogen (Ta—H) compound, a niobium-hydrogen (Nb—H) compound, a titanium-tantalum-hydrogen (Ti—Ta—H) compound, a titanium-niobium-hydrogen (Ti—Nb—H) compound, or a tantalum-niobium-hydrogen (Ta—Nb—H) compound.
16. The capacitor of claim 14 , wherein the electrode-protecting layer further comprises:
an etch stop layer disposed on the sacrificial reaction layer; and
an oxidation preventing layer disposed between the upper electrode and the etch stop layer.
17. The capacitor of claim 14 , wherein a concentration of hydrogen atoms in the sacrificial reaction layer is in a range of about 0.1 at. % to about 67 at. %.