IP Library Granted Patent US 9,093,657
Granted Patent B2
US 9,093,657 · App. 12/162,840 · Granted Jul 28, 2015

White light emitting devices

Inventors: Seth A. Coe-Sullivan (Belmont, MA); Vladimir Bulovic (Lexington, MA); Jonathan Steckel (Cambridge, MA); Moungi G. Bawendi (Cambridge, MA); Polina O. Anikeeva (Cambridge, MA); Jonathan E. Halpert (Cambridge, MA)
Assignee: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
H01L51/5012B82Y20/00B82Y30/00H01L33/00H01L33/08
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Quick Facts
Patent No.
US 9,093,657
App. No.
12/162,840
Granted
Jul 28, 2015
Kind
B2
Abstract

A white light emitting semiconductor nanocrystal includes a plurality of semiconductor nanocrystals.

Claims (31)

1. A light emitting device comprising:

a first electrode;

a hole injection layer in contact with the first electrode;

a hole transporting layer in contact with the hole injection layer;

a hole blocking layer;

an electron transporting layer in contact with the hole blocking layer;

a second electrode in contact with the electron transporting layer; and

an electroluminescent layer comprising a pattern comprising a plurality of electroluminescent semiconductor nanocrystals including a mixture of red, green and blue light emitting electroluminescent nanocrystals, between the hole transporting layer and the hole blocking layer, wherein the plurality of electroluminescent semiconductor nanocrystals are patterned, and wherein light emission from one of the plurality of electroluminescent semiconductor nanocrystals corresponds to its band gap, and wherein the light emitting device has an external quantum efficiency of at least 0.20%,

wherein the plurality of electroluminescent semiconductor nanocrystals comprise a Group II-VI compound, a Group II-V compound, a Group III-VI compound, a Group III-V compound, a Group IV-VI compound, a Group I-III-VI compound, a Group II-IV-VI compound, or a Group II-IV-V compound.

2. The light emitting device of claim 1 , wherein the first electrode is a transparent electrode.

3. The light emitting device of claim 1 , wherein the hole injection layer includes a conducting polymer.

4. The light emitting device of claim 1 , wherein the hole transporting layer includes a benzidine.

5. The light emitting device of claim 1 , wherein the hole blocking layer includes a triazole.

6. The light emitting device of claim 1 , wherein the electron transporting layer includes a metal complex.

7. The light emitting device of claim 1 , wherein the second electrode includes a metal.

8. The light emitting device of claim 1 , wherein the plurality of electroluminescent semiconductor nanocrystals can include at least three distinct color emissions when excited.

9. The light emitting device of claim 1 , wherein the plurality of electroluminescent semiconductor nanocrystals includes red, green and blue light emitting nanocrystals.

10. The light emitting device of claim 1 , wherein the plurality of electroluminescent semiconductor nanocrystals includes a nanocrystal, wherein the nanocrystal includes a core.

11. The light emitting device of claim 10 , further comprising an overcoating on the core, the overcoating including a second semiconductor material.

12. The light emitting device of claim 1 , wherein the light emitting device has CIE coordinates of (0.35, 0.41).

13. The light emitting device of claim 1 , wherein the light emitting device has a color rendering index (CRI) of 86 as compared to a 5500K black body reference.

14. The light emitting device of claim 1 , wherein exciton formation on the blue light emitting electroluminescent nanocrystals in the mixture governs efficiency of the light emitting device.

15. The light emitting device of claim 1 , wherein the color of the light emission varies by a voltage.

16. The light emitting device of claim 1 , wherein the pattern comprises a monolayer of the plurality of electroluminescent semiconductor nanocrystals.

17. A light emitting device comprising:

a first electrode;

a hole injection layer in contact with the first electrode;

a hole transporting layer in contact with the hole injection layer;

a hole blocking layer;

an electron transporting layer in contact with the hole blocking layer;

a second electrode in contact with the electron transporting layer; and a pattern comprising a plurality of semiconductor nanocrystals including a mixture of red, green and blue light emitting nanocrystals, between the hole transporting layer and the hole blocking layer, wherein light emitted by the light emitting device has CIE coordinates of an x value between 0.340 and 0.355 and a y-value of between 0.40 and 0.48.

Assignments (2)
CONFIRMATORY LICENSE Recorded May 24, 2012
From: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
To: NATIONAL SCIENCE FOUNDATION
Reel/Frame 028274/0869 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Oct 28, 2009
From: COE-SULLIVAN, SETH A.; BULOVIC, VLADIMIR; STECKEL, JONATHAN; BAWENDI, MOUNGI G.; ANIKEEVA, POLINA; HALPERT, JONATHAN E.
To: MASSACHUSETTS INSTITUTE OF TECHNOLOGY
Reel/Frame 023434/0651 →
Continuity (3)
Provisional Application 60773119 · Feb 14, 2006
Provisional Application 60828909 · Oct 10, 2006
Related Publication 20100001256A1 · Jan 7, 2010