Substrate-emitting transverse magnetic polarized laser employing a metal/semiconductor distributed feedback grating for symmetric-mode operation
Semiconductor lasers comprise a substrate; an active layer configured to generate transverse magnetic (TM) polarized light under an electrical bias; an upper cladding layer; a lower cladding layer; and a distributed feedback (DFB) grating defined by the interface of a layer of metal and a layer of semiconductor under the layer of metal, the interface periodically corrugated in the longitudinal direction of the laser with a periodicity of Λ DFB =mλ/(2n eff ), wherein m>1. The DFB grating is configured such that loss of one or more antisymmetric longitudinal modes of the laser structure via absorption to the DFB grating is sufficiently maximized so as to produce lasing of a symmetric longitudinal mode of the laser with laser emission characterized by a single-lobe beam along each direction defined by the grating diffraction orders corresponding to emission away from the plane of the grating.
1. A semiconductor laser comprising:
(a) a substrate;
(b) an active layer over the substrate, the active layer configured to generate transverse magnetic (TM) polarized light under an electrical bias;
(c) an upper cladding layer over the active layer;
(d) a lower cladding layer under the active layer, wherein the active layer, the upper cladding layer and the lower cladding layer define a TM polarized guided optical mode; and
(e) a distributed feedback grating over the upper cladding layer, the distributed feedback grating defined by the interface of a layer of metal and a layer of semiconductor under the layer of metal, the interface periodically corrugated in the longitudinal direction of the semiconductor laser with a periodicity of Λ DFB =mλ/(2n eff ), wherein m>1, wherein the interface supports one or more antisymmetric plasmonic modes,
and further wherein the distributed feedback grating is configured such that coupling of the TM polarized guided optical mode to the antisymmetric plasmonic modes, thereby generating one or more antisymmetric longitudinal modes of the semiconductor laser, is sufficiently maximized so as to result in absorption loss of the antisymmetric longitudinal modes to the distributed feedback grating sufficient to produce lasing of a symmetric longitudinal mode of the semiconductor laser with laser emission characterized by a single-lobe beam along each direction defined by the grating diffraction orders corresponding to emission away from the plane of the distributed feedback grating.
2. The semiconductor laser of claim 1 , wherein m=2 and the distributed feedback grating is a second-order distributed feedback grating and the laser emission is perpendicular to the distributed feedback grating.
3. The semiconductor laser of claim 1 , wherein the value of the grating depth and the value of the duty cycle of the distributed feedback grating are substantially near the values for which the TM polarized guided optical mode of the semiconductor laser is in resonance with the antisymmetric plasmonic modes of the distributed feedback grating.
4. The semiconductor laser of claim 1 , wherein the active layer is configured as a quantum cascade active layer.
5. The semiconductor laser of claim 1 , wherein the active layer is configured as an interband-transition active layer comprising tensile-strained quantum wells.
6. The semiconductor laser of claim 1 , further comprising distributed Bragg reflector gratings bounding the distributed feedback grating.
7. The semiconductor laser of claim 1 , wherein the distributed feedback grating does not comprise a π phase shift.
8. The semiconductor laser of claim 1 , wherein the edge faces defined by the longitudinal ends of the semiconductor laser have substantially the same reflectivity.
9. The semiconductor laser of claim 8 , wherein the edge faces are antireflective.
10. The semiconductor laser of claim 1 , wherein the distributed feedback grating comprises metallic grating elements which periodically alternate with semiconducting grating elements, wherein the semiconducting grating elements do not substantially absorb the TM polarized guided optical mode.
11. A semiconductor laser comprising:
(a) a substrate;
(b) a quantum cascade active layer over the substrate, the quantum cascade active layer configured to generate transverse magnetic (TM) polarized light under an electrical bias;
(c) an upper cladding layer over the quantum cascade active layer;
(d) a lower cladding layer under the quantum cascade active layer, wherein the quantum cascade active layer, the upper cladding layer and the lower cladding layer define a TM polarized guided optical mode; and
(e) a second-order distributed feedback grating over the upper cladding layer, the second-order distributed feedback grating defined by the interface of a layer of metal and a layer of semiconductor under the layer of metal, the interface periodically corrugated in the longitudinal direction of the semiconductor laser, wherein the interface supports one or more antisymmetric plasmonic modes,
wherein the second-order distributed feedback grating is configured such that coupling of the TM polarized guided optical mode to the antisymmetric plasmonic modes, thereby generating one or more antisymmetric longitudinal modes of the semiconductor laser, is sufficiently maximized so as to result in absorption loss of the antisymmetric longitudinal modes to the distributed feedback grating sufficient to produce lasing of a symmetric longitudinal mode of the semiconductor laser with laser emission perpendicular to the second-order distributed feedback grating, the laser emission characterized by a single-lobe, far-field beam pattern.
12. The semiconductor laser of claim 11 , further comprising second-order distributed Bragg reflector gratings bounding the distributed feedback grating.
13. The semiconductor laser of claim 11 , wherein the distributed feedback grating comprises metallic grating elements which periodically alternate with semiconducting grating elements, wherein the semiconducting grating elements do not substantially absorb the TM polarized guided optical mode.
14. A semiconductor laser comprising:
(a) a substrate;
(b) a quantum cascade active layer over the substrate, the quantum cascade active layer configured to generate transverse magnetic (TM) polarized light under an electrical bias;
(c) an upper cladding layer over the quantum cascade active layer;
(d) a lower cladding layer under the quantum cascade active layer, wherein the quantum cascade active layer, the upper cladding layer and the lower cladding layer define a TM polarized guided optical mode; and
(e) a second-order distributed feedback grating over the upper cladding layer, the second-order distributed feedback grating defined by the interface of a layer of metal and a layer of semiconductor under the layer of metal, the interface periodically corrugated in the longitudinal direction of the semiconductor laser, wherein the interface supports one or more antisymmetric plasmonic modes,
wherein the second-order distributed feedback grating is configured such that coupling of the TM polarized guided optical mode to the antisymmetric plasmonic modes, thereby generating one or more antisymmetric longitudinal modes of the semiconductor laser, is sufficiently maximized so as to result in absorption loss of the antisymmetric longitudinal modes to the distributed feedback grating sufficient to produce lasing of a symmetric longitudinal mode of the semiconductor laser with laser emission perpendicular to the second-order distributed feedback grating, the laser emission characterized by a single-lobe, far-field beam pattern and a wavelength in the range of from about 4 μm to about 5 μm.
15. The semiconductor laser of claim 14 , wherein the layer of metal comprises gold or silver.
16. The semiconductor laser of claim 14 , wherein the value of the grating depth and the value of the duty cycle of the distributed feedback grating are substantially near the values for which the TM polarized guided optical mode of the semiconductor laser is in resonance with the antisymmetric plasmonic modes of the distributed feedback grating.
17. The semiconductor laser of claim 14 , wherein the value of the grating depth of the distributed feedback grating is in the range of from about 0.10 μm to about 0.60 μm and the value of the duty cycle of the distributed feedback grating is in the range of from about 0.20 to about 0.50.
18. The semiconductor laser of claim 14 , wherein the separation of the distributed feedback grating from the quantum cascade active layer is no more than about 3.5 μm.
19. The semiconductor laser of claim 14 , wherein the layer of metal comprises gold or silver, the semiconductor laser is InP-based, and the value of the grating depth of the distributed feedback grating is in the range of from about 0.10 μm to about 0.60 μm and the value of the duty cycle of the distributed feedback grating is in the range of from about 0.20 to about 0.50.
20. The semiconductor laser of claim 19 , wherein the separation of the distributed feedback grating from the quantum cascade active layer is no more than about 3.5 μm.
21. The semiconductor laser of claim 20 , further comprising second-order distributed Bragg reflector gratings bounding the distributed feedback grating.
22. The semiconductor laser of claim 14 , wherein the distributed feedback grating comprises metallic grating elements which periodically alternate with semiconducting grating elements, wherein the semiconducting grating elements do not substantially absorb the TM polarized guided optical mode.