IP Library › Granted Patent US 9,096,921
Granted Patent B2
US 9,096,921 · App. 13/121,173 · Granted Aug 4, 2015

Transparent conductive film and touch panel

Inventors: Naka Tatami (Ohsu, JP); Toshiyuki Oya (Ohtsu, JP); Hideo Murakami (Ohtsu, JP)
Assignee: Toyo Boseki Kabushiki Kaisha
C23C14/086C23C14/5806H01B1/08
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Quick Facts
Patent No.
US 9,096,921
App. No.
13/121,173
Granted
Aug 4, 2015
Kind
B2
Abstract

The present invention provides a transparent conductive film excellent in pen sliding durability at the time of using the transparent conductive film for a touch panel and which enables to production a touch panel having excellent flatness. A transparent conductive film of the present invention comprises a transparent plastic film base and a transparent conductive thin film containing crystalline indium oxide as a main component laminated on at least one face of a transparent plastic film base, wherein an average circle-equivalent diameter of crystal grains of indium oxide of the transparent conductive thin film is 30 to 1000 nm, and a coefficient of variation of a circle-equivalent diameter of the crystal grains is 0.00 to 0.30. The transparent conductive film preferably contains indium oxide containing 0.5 to 8% by mass of tin oxide.

Claims (17)

1. A transparent conductive film obtained by laminating a transparent conductive thin film containing crystalline indium oxide as a main component on at least one face of a transparent plastic film base, wherein an average circle-equivalent diameter of crystal grains of indium oxide of the transparent conductive thin film is 30 to 1000 nm and a coefficient of variation of a circle-equivalent diameter of the crystal grains is 0.00 to 0.30.

2. The transparent conductive of claim 1 , wherein the transparent conductive thin film contains indium oxide as a main component and 0.5 to 8% by mass of tin oxide.

3. The transparent conductive film of claim 1 , wherein a thickness of the transparent conductive thin film is 10 to 200 nm.

4. A touch panel using the transparent conductive film of claim 1 as a film in a movable electrode side.

5. A transparent conductive film obtained by laminating a transparent conductive thin film containing indium oxide as a main component on at least one face of a transparent plastic film base, wherein a shrinkage ratio of the transparent conductive film at 120° C. for 60 minutes in at least one direction is 0.20 to 0.70%, an average circle-equivalent diameter of crystal grains of indium oxide of the transparent conductive thin film after heat treatment at 120° C. for 60 minutes is 30 to 1000 nm, and a ratio of an amorphous part to a crystalline part of the transparent conductive thin film is 0.00 to 0.50.

6. The transparent conductive film of claim 5 , wherein a shrinkage ratio HMD at 120° C. for 60 minutes in a machine direction of the transparent conductive film and a shrinkage ratio HTD at 120° C. for 60 minutes in a traverse direction of the transparent conductive film satisfy the formula (1):

0.00%≦|HMD−HTD|≦0.30%  (1).

7. The transparent conductive film of claim 5 , wherein a coefficient of variation of a circle-equivalent diameter of crystal grains of indium oxide of the transparent conductive thin film after heat treatment at 120° C. for 60 minutes is 0.00 to 0.30.

8. The transparent conductive film of claim 5 , wherein the transparent conductive thin film contains indium oxide as a main component and 0.5 to 8% by mass of tin oxide.

9. The transparent conductive film of claim 5 , wherein a thickness of the transparent conductive thin film is 10 to 200 nm.

10. A touch panel using the transparent conductive film of claim 5 as a film in a movable electrode side.

11. A transparent conductive film obtained by laminating a transparent conductive thin film containing indium oxide as a main component on at least one face of a base made of a laminated film obtained by forming a curable resin cured layer on at least one face of a transparent plastic film, wherein a shrinkage ratio of the transparent conductive film at 120° C. for 60 minutes in at least one direction is 0.20 to 0.70%, an average circle-equivalent diameter of crystal grains of indium oxide of the transparent conductive thin film after heat treatment at 120° C. for 60 minutes is 30 to 1000 nm, and a ratio of an amorphous part to a crystalline part of the transparent conductive thin film is 0.00 to 0.50.

12. The transparent conductive film of claim 11 , wherein the curable resin is an ultraviolet-curable resin.

13. The transparent conductive film of claim 11 , wherein the transparent conductive thin film contains indium oxide as a main component and 0.5 to 8% by mass of tin oxide.

14. The transparent conductive film of claim 11 , wherein a thickness of the transparent conductive thin film is 10 to 200 nm.

15. A touch panel using the transparent conductive film of claim 11 as a film in a movable electrode side.

16. The transparent conductive film of claim 11 , wherein a coefficient of variation of a circle-equivalent diameter of crystal grains of indium oxide of the transparent conductive thin film after heat treatment at 120° C. for 60 minutes is 0.00 to 0.30.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded May 6, 2011
From: TATAMI, NAKA; OYA, TOSHIYUKI; MURAKAMI, HIDEO
To: TOYO BOSEKI KABUSHIKI KAISHA
Reel/Frame 026239/0568 →
Priority Claims (3)
JP 2008-247940 · Sep 26, 2008 · national
JP 2009-134031 · Jun 3, 2009 · national
JP 2009-172097 · Jul 23, 2009 · national
Continuity (1)
Related Publication 20110177314A1 · Jul 21, 2011