Semiconductor light emitting device and package
A semiconductor light emitting device and package containing the same include: a light emitting structure including a first conductivity-type semiconductor layer, an active layer, and a second conductivity-type semiconductor layer. A light extraction layer is disposed on the light emitting structure and includes a light-transmissive thin film layer having light transmittance, a nano-rod layer including nano-rods disposed on the light-transmissive thin film layer, and a nano-wire layer including nano-wires disposed on the nano-rod layer.
1. A semiconductor light emitting device comprising:
a light emitting structure including:
a first conductivity-type semiconductor layer,
an active layer, and
a second conductivity-type semiconductor layer; and
a light extraction layer disposed on the light emitting structure, the light extraction layer including:
a light-transmissive thin film layer having light transmittance,
a nano-rod layer including a plurality of nano-rods disposed on the light-transmissive thin film layer, and
a nano-wire layer including a plurality of nano-wires disposed on the nano-rod layer, wherein:
the plurality of nano-wires have a width smaller than a width of the plurality of nano-rods,
the light-transmissive thin film layer, the nano-rod layer, and the nano-wire layer have refractive indices gradually reduced in a sequential manner, and
the light-transmissive thin film layer, the nano-rod layer, and the nano-wire layer have a single refractive index therein, respectively.