Semiconductor device
A switching component includes a control element and an integrated circuit. The integrated circuit includes a first transistor element and a second transistor element electrically connected in parallel to the first transistor element. The first transistor element includes first transistors, gate electrodes of which are disposed in first trenches in a first main surface of a semiconductor substrate. The second transistor element includes second transistors, gate electrodes of which are disposed in second trenches in the first main surface, and a second gate conductive line in contact with the gate electrodes in the second trenches. The control element is configured to control a potential applied to the second gate conductive line.
1. A switching component comprising a control element and an integrated circuit, the integrated circuit comprising:
a first transistor element comprising first transistors, gate electrodes of the first transistors being disposed in first trenches in a first main surface of a semiconductor substrate; and
a second transistor element electrically connected in parallel to the first transistor element, the second transistor element comprising:
second transistors, gate electrodes of the second transistors being disposed in second trenches in the first main surface; and
a second gate conductive line in contact with the gate electrodes in the second trenches,
wherein the control element is configured to control a potential applied to the second gate conductive line.
2. The switching component according to claim 1 , wherein the first transistor element and the second transistor element are electrically coupled to a common source terminal and a common drain terminal, and the control element is configured to control the potential applied to the second gate conductive line based on a potential between the common source terminal and the common drain terminal.
3. The switching component according to claim 2 , wherein the control element is configured to switch off the second transistor element when the potential between the common source terminal and the common drain terminal is larger than a first switching voltage and switch on the second transistor element when the potential between the common source terminal and the common drain terminal is smaller than a second switching voltage.
4. The switching component according to claim 1 , wherein the first transistor element and the second transistor element are electrically coupled to a common source terminal and a common drain terminal, and the control element is configured to control the potential applied to the second gate conductive line based on a potential between the first gate electrode and the common drain terminal.
5. The switching component according to claim 4 , wherein the control element is configured to switch off the second transistor element when the potential between the first gate terminal and the common drain terminal is larger than a first switching voltage and switch on the second transistor element when the potential between the first gate terminal and the common drain terminal is smaller than a second switching voltage.
6. The switching component according to claim 1 , wherein the first transistor element and the second transistor element are electrically coupled to a common source terminal and a common drain terminal, and the control element is configured to control the potential applied to the second gate conductive line based on a potential between the first gate electrode and the common drain terminal and further based on a potential between the common source terminal and the common drain terminal.
7. The switching component according to claim 1 , wherein the control element is a component of the integrated circuit.
8. The switching component according to claim 1 , wherein the control element is a component separate from the integrated circuit.
9. The switching component according to claim 1 , wherein the first and second trenches are arranged in an alternating manner.
10. The switching component according to claim 1 , wherein the first and second trenches are identical in structure.
11. The switching component according to claim 1 , wherein components of the control element are formed in the semiconductor substrate.
12. The switching component according to claim 1 , further comprising a current sensor, wherein the control element is configured to set the potential applied to the second gate conductive line based on a signal output from the current sensor.
13. The switching component according to claim 12 , wherein the control element is configured to switch off the second transistor element when a current measured by the current sensor exceeds a switching current.
14. A system comprising a controller and an integrated circuit, the integrated circuit comprising:
a first transistor element comprising first transistors, gate electrodes of the first transistors being disposed in first trenches in a first main surface of a semiconductor substrate;
a second transistor element electrically connected in parallel to the first transistor element, the second transistor element comprising:
second transistors, gate electrodes of the second transistors being disposed in second trenches in the first main surface; and
a second gate conductive line in contact with the gate electrodes in the second trenches; and
a control element configured to control a potential applied to the second gate conductive line based on a signal received from the controller.
15. The system according to claim 14 , wherein the control element is a component of the integrated circuit.
16. The system according to claim 14 , wherein the control element is a component of the controller.
17. The system according to claim 14 , wherein the controller is a hot-swap controller.
18. The system according to claim 14 , wherein the system implements a circuit breaker.
19. The system according to claim 14 , wherein the system implements a Hot-Swap controller.
20. A power supply system comprising a power supply element including a circuit breaker, the circuit breaker comprising a controller and a switching component, the switching component comprising a control element and an integrated circuit, the integrated circuit comprising:
a first transistor element comprising first transistors, gate electrodes of the first transistors being disposed in first trenches in a first main surface of a semiconductor substrate; and
a second transistor element electrically connected in parallel to the first transistor element, the second transistor element comprising:
second transistors, gate electrodes of the second transistors being disposed in second trenches in the first main surface; and
a second gate conductive line in contact with the gate electrodes in the second trenches,
wherein the control element is configured to control a potential applied to the second gate conductive line based on a signal supplied by the controller.