Process for forming a crack in a material
View Patent ↗A process for forming a layer ( 26 ) of semiconductor material from a substrate ( 20 ), or donor substrate, made of the same semiconductor material is described, comprising: formation in said donor substrate of a high lithium concentration zone ( 22 ), with a concentration between 5×10 18 atoms/cm 3 and 5×10 20 atoms/cm 3 , then a hydrogen implantation ( 24 ) in the donor substrate, in, or in the vicinity of, the high lithium concentration zone, application of a stiffener ( 19 ) with the donor substrate, application of a thermal budget to result in the detachment of the layer ( 34 ) defined by the implantation.
1. A process for forming a layer of semiconductor material from a donor substrate comprising the semiconductor material, the process comprising:
forming in the donor substrate a high lithium concentration zone, having a lithium concentration between 5×10 18 atoms/cm 3 and 5×10 20 atoms/cm 3 , such that said high lithium concentration zone forms a trap for hydrogen,
then implanting hydrogen in the donor substrate, in, or in the vicinity of, the high lithium concentration zone, to obtain an implanted donor substrate having a defined layer,
assembling the implanted donor substrate with a stiffener, and
detaching the defined layer from the donor substrate by heating the donor substrate.
2. The process of claim 1 , wherein the donor substrate is heated to a temperature between 150° C. and 700° C. for a time between 1 minute and 1 month.
3. The process of claim 1 , wherein the high lithium concentration zone is formed by lithium ion implantation.
4. The process of claim 3 , wherein the lithium ion implantation is performed using a dose greater than 1×10 13 /cm2.
5. The process of claim 1 , wherein the high lithium concentration zone is formed by electrolysis or diffusion.
6. The process of claim 5 , wherein the high lithium concentration zone is formed by diffusion, after deposition or evaporation of lithium on a surface of the donor substrate.
7. The process of claim 6 , wherein the diffusion is performed by annealing.
8. The process of claim 1 , wherein hydrogen ions are implanted at a dose between 10 16 atoms/cm 2 and 5×10 17 atoms/cm 2 .
9. The process of claim 1 , wherein a mean implantation depth of hydrogen in the donor substrate is different from a mean depth of lithium by less than 200 nm.
10. The process of claim 1 , wherein the assembly of the implanted donor substrate with the stiffener is of a molecular, direct assembly, or bonding type.
11. The process of claim 1 , wherein the donor substrate comprises silicon.
12. The process of claim 11 , wherein the silicon donor substrate is oxidized on a surface.
13. The process of claim 1 , wherein the stiffener comprises sapphire.
14. The process of claim 1 , wherein the donor substrate and the stiffener have thermal expansion coefficients differing, in absolute terms, by greater than 3×10 −6 K −1 .
15. The process of claim 3 , wherein the lithium ion implantation is performed at a dose between 10 13 /cm 2 and 5×10 15 /cm2.