IP Library Granted Patent US 9,108,216
Granted Patent B2
US 9,108,216 · App. 14/371,670 · Granted Aug 18, 2015

Vapor deposition mask, method for producing vapor deposition mask device and method for producing organic semiconductor element

Inventors: Yoshinori Hirobe (Tokyo, JP); Yutaka Matsumoto (Tokyo, JP); Masato Ushikusa (Tokyo, JP); Toshihiko Takeda (Tokyo, JP); Hiroyuki Nishimura (Tokyo, JP); Katsunari Obata (Tokyo, JP); Takashi Takekoshi (Tokyo, JP)
Assignee: DAI NIPPON PRINTING CO., LTD.
B05C21/005B32B37/182B32B38/0008C23C14/042H01L51/0011H01L51/56B32B2310/0843B32B2311/00B32B2398/00
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Quick Facts
Patent No.
US 9,108,216
App. No.
14/371,670
Granted
Aug 18, 2015
Kind
B2
Abstract

A method for producing a vapor deposition mask capable of satisfying both enhancement in definition and reduction in weight even when a size is increased, a method for producing a vapor deposition mask device capable of aligning the vapor deposition mask to a frame with high precision, and a method for producing an organic semiconductor element capable of producing an organic semiconductor element with high definition are provided. A metal mask provided with a slit, and a resin mask that is positioned on a front surface of the metal mask and has openings corresponding to a pattern to be produced by vapor deposition arranged by lengthwise and crosswise in a plurality of rows, are stacked.

Claims (45)

1. A vapor deposition mask,

wherein a metal mask provided with a slit, and

a resin mask that is positioned on a front surface of the metal mask, and has openings corresponding to a pattern to be produced by vapor deposition arranged by lengthwise and crosswise in a plurality of rows, are stacked.

2. The vapor deposition mask according to claim 1 ,

wherein the metal mask is of a magnetic substance.

3. The vapor deposition mask according to claim 1 ,

wherein a sectional shape of the opening has broadening toward a vapor deposition source direction.

4. The vapor deposition mask according to claim 1 ,

wherein a sectional shape of the slit has broadening toward the vapor deposition source direction.

5. The vapor deposition mask according to claim 1 ,

wherein a sectional shape of an entire opening formed by the slit of the metal mask and the opening of the resin mask presents a step shape.

6. The vapor deposition mask according to claim 1 ,

wherein a barrier layer is provided on end surfaces forming the opening of the resin mask.

7. The vapor deposition mask according to claim 1 ,

wherein a thickness of the resin mask is 3 μm to 25 μm inclusive.

8. A method for producing a vapor deposition mask device, comprising the steps of:

bonding a metal mask provided with a slit to a resin plate;

fixing the metal mask to which the resin plate is bonded, onto a frame containing a metal; and

forming openings corresponding to a pattern to be produced by vapor deposition in a plurality of rows lengthwise and crosswise in the resin plate by emitting laser from the metal mask side.

9. A method for producing a vapor deposition mask device, comprising the steps of:

fixing a metal mask provided with a slit onto a frame containing a metal;

bonding the metal mask fixed to the frame and a resin plate to each other; and

forming openings corresponding to a pattern to be produced by vapor deposition in a plurality of rows lengthwise and crosswise in the resin plate by emitting laser from the metal mask side.

10. A method for producing an organic semiconductor element,

wherein the vapor deposition mask according to claim 1 is used.

11. The vapor deposition mask according to claim 2 ,

wherein a sectional shape of the opening has broadening toward a vapor deposition source direction.

12. The vapor deposition mask according to claim 2 ,

wherein a sectional shape of the slit has broadening toward the vapor deposition source direction.

13. The vapor deposition mask according to claim 3 ,

wherein a sectional shape of the slit has broadening toward the vapor deposition source direction.

14. The vapor deposition mask according to claim 2 ,

wherein a sectional shape of an entire opening formed by the slit of the metal mask and the opening of the resin mask presents a step shape.

15. The vapor deposition mask according to claim 3 ,

wherein a sectional shape of an entire opening formed by the slit of the metal mask and the opening of the resin mask presents a step shape.

16. The vapor deposition mask according to claim 4 ,

wherein a sectional shape of an entire opening formed by the slit of the metal mask and the opening of the resin mask presents a step shape.

17. The vapor deposition mask according to claim 2 ,

wherein a barrier layer is provided on end surfaces forming the opening of the resin mask.

18. The vapor deposition mask according to claim 3 ,

wherein a barrier layer is provided on end surfaces forming the opening of the resin mask.

19. The vapor deposition mask according to claim 4 ,

wherein a barrier layer is provided on end surfaces forming the opening of the resin mask.

20. The vapor deposition mask according to claim 5 ,

wherein a barrier layer is provided on end surfaces forming the opening of the resin mask.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jul 14, 2014
From: HIROBE, YOSHINORI; MATSUMOTO, YUTAKA; USHIKUSA, MASATO; TAKEDA, TOSHIHIKO; NISHIMURA, HIROYUKI; OBATA, KATSUNARI; TAKEKOSHI, TAKASHI
To: DAI NIPPON PRINTING CO., LTD.
Reel/Frame 033306/0579 →
Priority Claims (1)
JP 2012-004484 · Jan 12, 2012 · national
Continuity (1)
Related Publication 20150037928A1 · Feb 5, 2015