Method of manufacturing flexible display device
Disclosed is a flexible display device and method of manufacturing the same in which a method of manufacturing a flexible display device may include forming a sacrificial layer on a support substrate, the sacrificial layer including at least one barrier layer and a separation layer, the barrier layer having a higher hydrogen content than that of the separation layer; forming a first flexible substrate on the support substrate provided with the sacrificial layer; forming a plurality of device elements on the first flexible substrate; and irradiating a laser onto the sacrificial layer through the support substrate and separating the support substrate from the first substrate.
1. A method of manufacturing a flexible display device, the method comprising:
forming a sacrificial layer on a support substrate, the sacrificial layer including at least one barrier layer and a separation layer, the barrier layer having a higher hydrogen content than that of the separation layer;
forming a first flexible substrate on the support substrate provided with the sacrificial layer;
forming a plurality of device elements on the first flexible substrate; and
irradiating a laser onto the sacrificial layer through the support substrate and separating the support substrate from the first substrate.
2. The method of claim 1 , further comprising forming a second substrate on the plurality of device elements.
3. The method of claim 2 , wherein the second substrate is a flexible substrate.
4. The method of claim 1 , wherein the barrier layer includes first and second barrier layers, and wherein the separation layer is interposed between the first and second barrier layers.
5. The method of claim 1 , wherein the sacrificial layer has a double-layered structure with the barrier layer and the separation layer.
6. The method of claim 5 , wherein the separation layer is formed on the barrier layer.
7. The method of claim 5 , wherein the barrier layer is formed on the separation layer.
8. The method of claim 1 , wherein the barrier layer is formed using a first gas which includes silane SiH 4 , hydrogen H 2 and phosphine PH 3 .
9. The method of claim 8 , wherein the separation layer includes amorphous silicon (a-Si).
10. The method of claim 9 , wherein the separation layer is formed using a second gas which includes silane SiH 4 and argon Ar.
11. The method of claim 9 , wherein the separation layer is formed using a third gas which includes silane SiH 4 and hydrogen H 2 .
12. The method of claim 1 , wherein the separation layer of the sacrificial layer is formed in a thickness range of about 500 Å to about 1000 Å.
13. The method of claim 1 , wherein the barrier layer of the sacrificial layer is formed in a thickness range of about 100 Å to about 300 Å.
14. The method of claim 1 , wherein the barrier layer and the separation layer are formed within a same chamber.
15. The method of claim 14 , wherein the barrier layer and the separation layer are formed within the same chamber by changing gases.
16. The method of claim 1 , wherein the barrier layer has a higher hydrogen content by about at least 20% than that of the separation layer.
17. The method of claim 1 , wherein the first flexible substrate is one of a plastic substrate and a thin metal film.
18. The method of claim 1 , wherein the plurality of device elements include pluralities of thin layers and electrical elements.
19. The method of claim 1 , wherein the plurality of device elements include thin film transistors each configured with a gate electrode, a semiconductor layer, a source electrode and a drain electrode.
20. The method of claim 1 , wherein the flexible display device is one of an organic light emitting display (OLED) device, a liquid crystal display (LCD) device and an electrophoretic display device.