Multilayer pillar for reduced stress interconnect and method of making same

1. A structure comprising a modulated copper pillar including:

an uppermost layer that connects the modulated copper pillar to a chip and that prevents diffusion of materials between the chip and materials of the modulated copper pillar;

an upper copper layer;

at least one low strength, high ductility deformation region; and

a lower copper layer,

wherein the at least one low strength, high ductility deformation region is configured to absorb force imposed during chip assembly and thermal excursions,

wherein the at least one low strength, high ductility deformation region comprises at least two separate, low strength, high ductility deformation layers of the modulated copper pillar.

2. The structure of claim 1 , wherein the at least one low strength, high ductility deformation region includes one of Tin, Bismuth and Indium.

3. The structure of claim 2 , wherein a thickness of the at least one low strength, high ductility deformation region is about 0.5 to 20 microns in thickness.

4. The structure of claim 3 , wherein the thickness is about 0.5 to 10 microns.

5. The structure of claim 1 , wherein the at least one low strength, high ductility deformation region has a modulus of elasticity less than copper.

6. The structure of claim 1 , wherein the at least one low strength, high ductility deformation region includes one of gold, aluminum and silver.

7. The structure of claim 6 , wherein the at least one low strength, high ductility deformation region is about 0.2 to 1 microns in thickness.

8. The structure of claim 1 , wherein:

the uppermost layer is comprised of a barrier and adhesion layer which is formed on, and entirely covers an upper surface of the upper copper layer;

the upper copper layer is formed on, and entirely covers an uppermost surface of the at least one low strength, high ductility deformation region;

a lowermost surface of the at least one low strength, high ductility deformation region is formed on, and entirely covers an uppermost surface of the lower copper layer; and

a lowermost surface of the lower copper layer is formed on, and entirely covers an uppermost surface of a solder disc.

9. The structure of claim 8 , further comprising:

a first protective layer interposed at an interface between the uppermost surface of the at least one low strength, high ductility deformation region and the upper copper layer; and

a second protective layer interposed at an interface between the lowermost surface of the at least one low strength, high ductility deformation region and the lower copper layer.

10. The structure of claim 9 , wherein:

the first protective layer is a layer of nickel covering the entire uppermost surface of the at least one low strength, high ductility deformation region; and

the second protective layer is another layer of nickel covering the entire lowermost most surface of the at least one low strength, high ductility deformation region.

11. The structure of claim 1 , wherein the at least one low strength, high ductility deformation region is configured to slide or tilt during a heating cycle of the chip assembly.

12. An interconnect pillar comprising an intermediate layer interposed between an upper copper and a lower copper layer, wherein:

the intermediate layer having a lower modulus of elasticity than that of the upper copper and the lower copper layer;

the intermediate layer is structured to absorb stress imposed during a cooling cycle of an interconnect process with a chip which would otherwise be imparted to the chip; and

the intermediate layer is configured to slide or tilt during a heating cycle of the interconnect process with the chip, and

further comprising a second intermediate layer between the lower copper layer and another copper layer.

13. The interconnect pillar of claim 12 , wherein the intermediate layer is one of Aluminum, Gold and Silver.

14. The interconnect pillar of claim 12 , wherein the intermediate layer is one of Indium, Tin and Bismuth.

15. The interconnect pillar of claim 12 , further comprising a cap layer formed beneath the lower copper layer, the cap layer having properties to bond the interconnect pillar to a substrate.

16. An interconnect pillar comprising:

a first copper layer;

a first nickel barrier protective layer;

a first intermediate layer;

a second nickel barrier protective layer; and

a second copper layer,

wherein:

the first copper layer, the first nickel barrier protective layer, the first intermediate layer, the second nickel barrier protective layer, and the second copper layer each have a substantially planar upper surface and a substantially planar lower surface,

the upper surface of first nickel barrier protective layer in direct contact with the lower surface of the first copper layer;

the upper surface of the first intermediate layer is in direct contact with the lower surface of the first nickel barrier protective layer;

the first intermediate layer has a modulus of elasticity lower than the first copper layer;

the upper surface of the second nickel barrier protective layer is in direct contact with the lower surface of the first planar intermediate layer;

the upper surface of the second copper layer is in direct contact with the lower surface of the second nickel barrier protective layer; and

the first intermediate layer having a modulus of elasticity lower than the second copper layer.

17. The interconnect pillar of claim 16 , further comprising:

a second intermediate layer;

a third nickel barrier protective layer;

a fourth nickel barrier protective layer; and

a third copper layer,

wherein:

the second intermediate layer, the third nickel barrier protective layer, the fourth nickel barrier protective layer, and the third copper layer each have a substantially planar upper surface and a substantially planer lower surface;

the lower surface of the second copper layer is in direct contact with the upper surface of the third nickel barrier protective layer;

the lower surface of the third nickel barrier protective layer is in direct contact with the upper surface of the second intermediate layer;

the lower surface of the second intermediate layer is in direct contact with the upper surface of the fourth nickel barrier protective layer;

the lower surface of the fourth nickel barrier protective layer is in direct contact with the upper surface of the third copper layer; and

each of the first intermediate layer and second intermediate layer has a modulus of elasticity lower than each of the first, second, and third copper layers.

18. The interconnect pillar of claim 16 , wherein the a first intermediate layer is configured to slide or tilt during a heating cycle of an interconnect process with a chip.