Light emitting device with metal electrode layer having protrusion portions
Disclosed is a light emitting device including a conductive substrate, a first electrode layer disposed on the conductive substrate, a light emitting structure disposed on the first electrode layer, the light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer, and a second electrode layer electrically connected to the second semiconductor layer, wherein the first electrode layer includes a metal electrode layer disposed on the conductive substrate, a transparent electrode layer disposed on the metal electrode layer, and a plurality of contact portions extending from the metal electrode layer, the contact portions vertically passing through the transparent electrode layer and contacting the light emitting structure, wherein the contact portions are spaced from one another by a predetermined distance.
1. A light emitting device comprising:
a conductive substrate;
a first electrode layer disposed on the conductive substrate;
a light emitting structure disposed on the first electrode layer, the light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer; and
a second electrode layer electrically connected to the second semiconductor layer,
wherein the first electrode layer comprises:
a metal electrode layer disposed on the conductive substrate;
a transparent electrode layer disposed on the metal electrode layer; and
a plurality of contact portions extending from the metal electrode layer, the contact portions vertically passing through the transparent electrode layer and contacting the light emitting structure,
wherein the contact portions are spaced from one another by a predetermined distance, and
wherein the contact portion comprises AuBe.
2. The light emitting device according to claim 1 , wherein the transparent electrode layer comprises at least one of In 2 O 3 , SnO 2 , ZnO, ITO, CTO, CuAlO 2 , CuGaO 2 and SrCu 2 O 2 .
3. The light emitting device according to claim 1 , wherein a planar area of the transparent electrode layer is greater than a planar area of the contact portion.
4. The light emitting device according to claim 1 , wherein a material for the metal electrode layer is the same as a material for the contact portion.
5. A light emitting device comprising:
a conductive substrate;
a first electrode layer disposed on the conductive substrate;
a light emitting structure disposed on the first electrode layer, the light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer; and
a second electrode layer electrically connected to the second semiconductor layer,
wherein the first electrode layer comprises:
a metal electrode layer disposed on the conductive substrate;
a transparent electrode layer disposed on the metal electrode layer; and
a plurality of contact portions extending from the metal electrode layer, the contact portions vertically passing through the transparent electrode layer and contacting the light emitting structure,
wherein the contact portions are spaced from one another by a predetermined distance, and
wherein the light emitting structure further comprises a window layer contacting the first electrode layer.
6. The light emitting device according to claim 1 , wherein the light emitting structure comprises AlGaInP or GaInP.
7. The light emitting device according to claim 5 , wherein the contact portion comprises AuBe, Ag or a Ag alloy.
8. The light emitting device according to claim 5 , wherein the window layer comprises GaP, GaAsP or AlGaAs.
9. The light emitting device according to claim 5 , wherein the contact portion contacts a lower surface of the window layer.
10. A light emitting device comprising:
a conductive substrate;
a first electrode layer disposed on the conductive substrate;
a light emitting structure disposed on the first electrode layer, the light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer; and
a second electrode layer electrically connected to the second semiconductor layer,
wherein the first electrode layer comprises:
a metal electrode layer disposed on the conductive substrate;
a transparent electrode layer disposed on the metal electrode layer; and
a plurality of contact portions extending from the metal electrode layer, the contact portions vertically passing through the transparent electrode layer and contacting the light emitting structure,
wherein the contact portions are spaced from one another by a predetermined distance, and
a diffusion area containing Be is formed in a portion of the light emitting structure contacting the contact portion.
11. The light emitting device according to claim 10 , wherein the transparent electrode layer comprises at least one of In 2 O 3 , SnO 2 , ZnO, ITO, CTO, CuAlO 2 , CuGaO 2 and SrCu 2 O 2 .
12. The light emitting device according to claim 10 , wherein a planar area of the transparent electrode layer is greater than a planar area of the contact portion.
13. The light emitting device according to claim 10 , wherein a material for the metal electrode layer is the same as a material for the contact portion.
14. The light emitting device according to claim 10 , wherein the light emitting structure further comprises a window layer contacting the first electrode layer.
15. The light emitting device according to claim 14 , wherein the window layer comprises GaP, GaAsP or AlGaAs.
16. The light emitting device according to claim 14 , wherein the contact portion contacts a lower surface of the window layer.
17. The light emitting device according to claim 10 , wherein the diffusion area is formed in the light emitting structure using a mixture of Be and at least part of elements of a material constituting the light emitting structure.
18. The light emitting device according to claim 10 , wherein the diffusion area protrudes from the light emitting structure.
19. The light emitting device according to claim 10 , wherein the light emitting structure comprises AlGaInP or GaInP.
20. A light emitting device package comprising a light emitting device, wherein the light emitting device comprises:
a conductive substrate;
a first electrode layer disposed on the conductive substrate;
a light emitting structure disposed on the first electrode layer, the light emitting structure including a first semiconductor layer, a second semiconductor layer, and an active layer disposed between the first semiconductor layer and the second semiconductor layer; and
a second electrode layer electrically connected to the second semiconductor layer,
wherein the first electrode layer comprises:
a metal electrode layer disposed on the conductive substrate;
a transparent electrode layer disposed on the metal electrode layer; and
a plurality of contact portions extending from the metal electrode layer, the contact portions vertically passing through the transparent electrode layer and contacting the light emitting structure,
wherein the contact portions are spaced from one another by a predetermined distance, and
a diffusion area containing Be is formed in a portion of the light emitting structure contacting the contact portion.