Hybrid layer including oxide layer or organic layer and organic polymer layer and manufacturing method thereof

1. An organic semiconductor device, comprising:

a gate electrode;

an oxide layer or an organic layer disposed on the gate electrode;

an organic polymer layer chemically combined with the oxide layer or the organic layer; and

an organic semiconductor layer disposed on the organic polymer layer,

wherein the oxide layer or the organic layer is an insulating intermediate between the gate electrode and the organic semiconductor layer,

wherein the organic layer comprises a functional group on a surface, or is capable of inducing a functional group, and

wherein the organic polymer layer comprises a polymer of which one end of a functional group of the polymer is attached to a surface of the organic polymer and an opposite end of the polymer is in a fluid state.

2. The organic semiconductor device of claim 1 , wherein the oxide layer corresponds to a single layer comprising an inorganic oxide or a laminated layer of a plurality of layers comprising an inorganic oxide.

3. The organic semiconductor device of claim 2 , wherein the inorganic oxide comprises at least one oxide selected from the group consisting of titanium dioxide (TiO 2 ), silicon dioxide (SiO 2 ), zinc peroxide (ZnO 2 ), indium zinc oxide (InZnO), iron(III) oxide (Fe 2 O 3 ), zirconium oxide (ZrO 2 ), aluminum oxide (Al 2 O 3 ), vanadium oxide (V 2 O 5 ), and niobium pentoxide (Nb 2 O 5 ).

4. The organic semiconductor device of claim 1 , wherein the functional group corresponds to a saturated or unsaturated hydrocarbon derivative polymer comprising at least one compound selected from the group consisting of a hydroxyl group, an alkoxy group, a carboxyl group, a halogen group, a silane group, an amine group, a nitro group, an ester group, an aromatic series, a peptide group, an isocyanate group, and sulfur.

5. The organic semiconductor device of claim 1 , wherein an organic polymer of the organic polymer layer corresponds to a hydrophobic or hydrophilic polymer.

6. The organic semiconductor device of claim 1 , wherein an organic polymer of the organic polymer layer is replaced with at least one compound selected from the group consisting of a hydroxyl group, a carboxyl group, a carboxylic acid derivative denoted by —COOR 1 , —COOCOR 1 or —CONR 1 R 2 , an amine group, an isocyanate group, and a silane derivate denoted by —SiR 1 R 2 R 3 , R 1 through R 3 corresponding to one of hydrogen, an alkoxy group, a halogen, and an alkyl group having 1 carbon to 12 carbons respectively.

7. The organic semiconductor device of claim 1 , wherein an organic polymer of the organic polymer layer comprises at least one compound selected from the group consisting of polytetrafluoroethylene, polyvinylidenefluoride, polytrichlorofluoroethylene, polyvinylfluoride, a polyolefin-based material, a polysilane-based material, a polyester-based material, a polyfluoro-based material, a polyvinyl chloride-based material, a polyamide-based material, a polyacrylate-based material, a polystyrene-based material, and a copolymer thereof.

8. The organic semiconductor device of claim 1 , wherein an organic polymer of the organic polymer layer has a weight-average molecular weight in a range of 5,000 to 200,000 grams/mole (g/mol).

9. The organic semiconductor device of claim 1 , wherein the organic polymer layer has a thickness in a range of 3 to 20 nanometers (nm).

10. The organic semiconductor device of claim 1 , wherein the organic polymer layer has an organic polymer that reacts with and is chemically combined with at least one compound selected from the group consisting of a hydroxyl group, an amine group, a carboxyl group, an alkoxy group, and an amide group existing on the oxide layer or the organic layer.

11. The organic semiconductor device of claim 1 , wherein the organic polymer layer corresponds to a substrate or an intermediate layer of an electronic device.

12. The organic semiconductor device of claim 1 , wherein the hybrid layer corresponds to a substrate or an intermediate layer of an electronic device.

13. A method of manufacturing an organic semiconductor device, the method comprising:

forming a gate electrode;

disposing an oxide layer or an organic layer on the gate electrode,

applying an organic polymer to the oxide layer or the organic layer;

forming an organic polymer layer by chemically combining the organic polymer with a functional group on the oxide layer or the organic layer through a heat treatment on the oxide layer or the organic layer to which the organic polymer is applied; and

disposing an organic semiconductor layer on the organic polymer layer,

wherein the oxide layer or the organic layer is an insulating intermediate between the gate electrode and the organic semiconductor layer,

wherein the organic layer comprises a functional group on a surface, or is capable of inducing a functional group, and

wherein the functional group corresponds to a saturated or unsaturated hydrocarbon derivative polymer comprising at least one compound selected from the group consisting of a hydroxyl group, an alkoxy group, a carboxyl group, a halogen group, a silane group, an amine group, a nitro group, an ester group, an aromatic series, a peptide group, an isocyanate group, and sulfur.

14. The method of claim 13 , wherein the oxide layer corresponds to a single layer comprising an inorganic oxide or a laminated layer of a plurality of layers comprising an inorganic oxide.

15. The method of claim 14 , wherein the inorganic oxide comprises at least one oxide selected from the group consisting of titanium dioxide (TiO 2 ), silicon dioxide (SiO 2 ), zinc peroxide (ZnO 2 ), indium zinc oxide (InZnO), iron(III) oxide (Fe 2 O 3 ), zirconium oxide (ZrO 2 ), aluminum oxide (Al 2 O 3 ), vanadium oxide (V 2 O 5 ), and niobium pentoxide (Nb 2 O 5 ).

16. The method of claim 13 , wherein an organic polymer of the organic polymer layer corresponds to a hydrophobic or hydrophilic polymer.

17. The method of claim 13 , wherein an organic polymer of the organic polymer layer is replaced with at least one compound selected from the group consisting of a hydroxyl group, a carboxyl group, a carboxylic acid derivative denoted by —COOR 1 , —COOCOR 1 or —CONR 1 R 2 , an amine group, an isocyanate group, and a silane derivate denoted by —SiR 1 R 2 R 3 , R 1 through R 3 corresponding to one of hydrogen, an alkoxy group, a halogen, and an alkyl group having 1 carbon to 12 carbons respectively.

18. The method of claim 13 , wherein an organic polymer of the organic polymer layer comprises at least one compound selected from the group consisting of polytetrafluoroethylene, polyvinylidenefluoride, polytrichlorofluoroethylene, polyvinylfluoride, a polyolefin-based material, a polysilane-based material, a polyester-based material, a polyfluoro-based material, a polyvinyl chloride-based material, a polyamide-based material, a polyacrylate-based material, a polystyrene-based material, and a copolymer thereof.

19. The method of claim 13 , wherein an organic polymer of the organic polymer layer has a weight-average molecular weight in a range of 5,000 to 200,000 grams/mole (g/mol).

20. The method of claim 13 , wherein the applying step is performed by a drop-casting scheme, a solution spray scheme, an inkjet printing scheme, or a screen printing scheme.

21. The method of claim 13 , wherein the organic polymer layer comprises a polymer of which one end of a functional group of the polymer is attached to a surface of the organic polymer and an opposite end of the polymer is in a fluid state.

22. The method of claim 13 , wherein the organic polymer layer has a thickness in a range of 3 to 20 nanometers (nm).

23. The method of claim 13 , wherein the organic polymer layer has an organic polymer that reacts with and is chemically combined with at least one compound selected from the group consisting of a hydroxyl group, an amine group, a carboxyl group, an alkoxy group, and an amide group existing on the oxide layer or the organic layer.

24. The method of claim 13 , wherein the heat treatment is performed at a temperature in a range of 50° C. to 200° C. and for a period 1 to 10 hours.

25. The method of claim 13 , further comprising:

introducing at least one compound selected from the group consisting of a hydroxyl group, an amine group, a carboxyl group, an alkoxy group, and an amide group on the oxide layer or the organic layer, and applying optical energy to the oxide layer or the organic layer, before applying the organic polymer.

26. The method of claim 13 , further comprising:

eliminating, through cleaning, a remaining organic polymer failing to combine with the functional group of the oxide layer or the organic layer after the heat treatment.

27. The method of claim 13 , wherein disposing the organic semiconductor layer comprises wet or vacuum depositing the organic semiconductor on the organic polymer layer.