Apparatus, method and program for manufacturing nitride film
A nitride film manufacturing apparatus forms a nitride film on a substrate provided in a chamber by a plasma CVD technique. Specifically, the nitride film manufacturing apparatus includes a controller for calculating a first period for applying first high-frequency power having a relatively high frequency and a second period for applying second high-frequency power having a relatively low frequency in order to obtain desired compressive stress or tensile stress of the nitride film, based on distribution of a refractive index of the nitride film and/or distribution of a deposition rate of the nitride film, the distribution falling within a predetermined numerical range and being obtained using the first high-frequency power and/or the second high-frequency power applied independently for forming the nitride film.
1. A nitride film manufacturing apparatus for forming a nitride film on a substrate provided in a chamber by a plasma CVD technique, the apparatus comprising:
a controller for calculating a first period for applying first high-frequency power having a relatively high frequency and a second period for applying second high-frequency power having a relatively low frequency in order to obtain desired compressive stress or tensile stress of the nitride film, based on distribution of a refractive index of the nitride film and/or distribution of a deposition rate of the nitride film, the distribution falling within a predetermined numerical range and being obtained using the first high-frequency power and/or the second high-frequency power applied independently for forming the nitride film.
2. The nitride film manufacturing apparatus according to claim 1 , wherein
the controller alternately applies the first period and the second period.
3. The nitride film manufacturing apparatus according to claim 1 , wherein, in the predetermined numerical range, the distribution of the refractive index of the nitride film and/or the distribution of the deposition rate of the nitride film has ununiformity of at most ±5%.
4. The nitride film manufacturing apparatus according to claim 2 , wherein, in the predetermined numerical range, the distribution of the refractive index of the nitride film and/or the distribution of the deposition rate of the nitride film has ununiformity of at most ±5%.
5. The nitride film manufacturing apparatus according to claim 1 , wherein
the distribution of the refractive index of the nitride film and/or the distribution of the deposition rate of the nitride film within the predetermined numerical range is obtained by changing at least one value selected from a group consisting of temperature of the substrate, internal pressure of the chamber, a flow rate of a reactive gas imported into the chamber, and a flow rate of an unreactive gas imported into the chamber.
6. The nitride film manufacturing apparatus according to claim 2 , wherein
the distribution of the refractive index of the nitride film and/or the distribution of the deposition rate of the nitride film within the predetermined numerical range is obtained by changing at least one value selected from a group consisting of temperature of the substrate, internal pressure of the chamber, a flow rate of a reactive gas imported into the chamber, and a flow rate of an unreactive gas imported into the chamber.
7. A nitride film manufacturing method for forming a nitride film on a substrate provided in a chamber by a plasma CVD technique, the method comprising the steps of:
obtaining distribution of a refractive index of the nitride film and/or distribution of a deposition rate of the nitride film within a predetermined numerical range, using first high-frequency power having a relatively high frequency and/or second high-frequency power having a relatively low frequency, the first high-frequency power and the second high-frequency power being applied independently for forming the nitride film; and
calculating a first period for applying the first high-frequency power and a second period for applying the second high-frequency power in order to obtain desired compressive stress or tensile stress of the nitride film, based on the distribution of the refractive index of the nitride film and/or the distribution of the deposition rate of the nitride film.
8. The nitride film manufacturing method according to claim 7 , wherein
the first period and the second period are provided alternately.
9. The nitride film manufacturing method according to claim 7 , wherein, in the predetermined numerical range, the distribution of the refractive index of the nitride film and/or the distribution of the deposition rate of the nitride film has ununiformity of at most ±5%.
10. The nitride film manufacturing method according to claim 8 , wherein, in the predetermined numerical range, the distribution of the refractive index of the nitride film and/or the distribution of the deposition rate of the nitride film has ununiformity of at most ±5%.
11. A nitride film manufacturing program for forming a nitride film on a substrate provided in a chamber by a plasma CVD technique, the program comprising commands for causing a computer to execute the steps of:
obtaining distribution of a refractive index of the nitride film and/or distribution of a deposition rate of the nitride film within a predetermined numerical range, using first high-frequency power having a relatively high frequency and/or second high-frequency power having a relatively low frequency, the first high-frequency power and the second high-frequency power being applied independently for forming the nitride film; and
calculating a first period for applying the first high-frequency power and a second period for applying the second high-frequency power in order to obtain desired compressive stress or tensile stress of the nitride film, based on the distribution of the refractive index of the nitride film and/or the distribution of the deposition rate of the nitride film.