IP Library Granted Patent US 9,117,790
Granted Patent B2
US 9,117,790 · App. 13/947,936 · Granted Aug 25, 2015

Methods and arrangements relating to semiconductor packages including multi-memory dies

Inventor: Sehat Sutardja (Los Altos Hills, CA)
Assignee: Marvell World Trade Ltd.
H01L23/36H01L21/82H01L24/73H01L25/0652H01L25/105H01L24/13H01L24/16H01L24/29H01L24/32H01L24/48H01L2224/0401H01L2224/04042H01L2224/06155H01L2224/131H01L2224/16145H01L2224/16225H01L2224/2919H01L2224/32145H01L2224/32225H01L2224/4824H01L2224/48145H01L2224/48227H01L2224/73207H01L2224/73215H01L2224/73253H01L2224/73265H01L2225/0651H01L2225/06506H01L2225/06562H01L2225/06589H01L2225/1023H01L2225/1058H01L2924/1434H01L2924/1436H01L2924/15311H01L2924/15331H01L2924/19107
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Quick Facts
Patent No.
US 9,117,790
App. No.
13/947,936
Filed
Jul 22, 2013
Granted
Aug 25, 2015
Kind
B2
Art Unit
2893
USPC
257/692
Abstract

In an embodiment, there is provided a packaging arrangement comprising a substrate; a multi-memory die coupled to the substrate, wherein the multi-memory die comprises multiple individual memory dies, and each of the multiple individual memory dies is defined as an individual memory die within a wafer of semiconductor material during production of memory dies, and the multi-memory die is created by singulating the wafer of semiconductor material into memory dies, where at least one of the memory dies is the multi-memory die that includes the multiple individual memory dies that are still physically connected together; and a semiconductor die coupled to the multi-memory die and the substrate, wherein the semiconductor die is configured as a system on a chip, wherein at least one of the multi-memory die and the semiconductor die is attached to the substrate.

Claims (43)

1. A packaging arrangement comprising:

a substrate;

a multi-memory die disposed on the substrate, wherein the multi-memory die comprises multiple individual memory dies and

each of the multiple individual memory dies is defined as an individual memory die within a wafer of semiconductor material during production of memory dies, and

the multi-memory die is created by singulating the wafer of semiconductor material into memory dies, where at least one of the memory dies is the multi-memory die that includes the multiple individual memory dies that are still physically connected together, wherein the multi-memory die comprises multiple individual memory dies including (i) a first individual memory die and (ii) a second individual memory die;

a semiconductor die coupled to the multi-memory die and the substrate, wherein the semiconductor die is disposed on the multi-memory die such that the multi-memory die is disposed between the substrate and the semiconductor die, wherein the semiconductor die is configured as a system on a chip, wherein at least one of the multi-memory die and the semiconductor die is attached to the substrate;

a first plurality of bond pads disposed on the first individual memory die;

a second plurality of bond pads disposed on the second individual memory die;

a third plurality of bond pads disposed (i) on the semiconductor die and (ii) near a first edge of the semiconductor die, wherein one or more of the first plurality of bond pads is coupled to a corresponding one or more of the third plurality of bond pads;

a fourth plurality of bond pads disposed (i) on the semiconductor die and (ii) near a second edge of the semiconductor die, wherein the second edge of the semiconductor die is opposite to the first edge of the semiconductor die, and wherein one or more of the second plurality of bond pads is coupled to a corresponding one or more of the fourth plurality of bond pads;

a fifth plurality of bond pads disposed (i) on the semiconductor die and (ii) near a third edge of the semiconductor die, wherein the third edge of the semiconductor die is perpendicular to the first edge of the semiconductor die; and

a sixth plurality of bond pads disposed on the substrate, wherein one or more of the fifth plurality of bond pads is coupled to a corresponding one or more of the sixth plurality of bond pads.

2. The packaging arrangement of claim 1 , wherein the semiconductor die is coupled to the substrate via a wire bonding process.

3. The packaging arrangement of claim 1 , further comprising a redistribution layer attached to the multi-memory die.

4. The packaging arrangement of claim 3 , wherein the semiconductor die is coupled to the redistribution layer, and thereby the multi-memory die, via a wire bonding process.

5. The packaging arrangement of claim 1 , wherein the multi-memory die is attached to the substrate via an epoxy or glue.

6. The packaging arrangement of claim 1 , wherein the semiconductor die is attached to the multi-memory die via an epoxy or glue.

7. The packaging arrangement of claim 1 , wherein:

the semiconductor die is disposed on a boundary between the first individual memory die and the second individual memory die.

8. A packaging arrangement comprising:

a substrate;

a multi-memory die disposed on the substrate, wherein the multi-memory die comprises multiple individual memory dies and

each of the multiple individual memory dies is defined as an individual memory die within a wafer of semiconductor material during production of memory dies, and

the multi-memory die is created by singulating the wafer of semiconductor material into memory dies, where at least one of the memory dies is the multi-memory die that includes the multiple individual memory dies that are still physically connected together;

a semiconductor die coupled to the multi-memory die and the substrate, wherein the semiconductor die is disposed on the multi-memory die such that the multi-memory die is disposed between the substrate and the semiconductor die, wherein the semiconductor die is configured as a system on a chip, wherein at least one of the multi-memory die and the semiconductor die is attached to the substrate, wherein the multi-memory die comprises multiple individual memory dies including (i) a first individual memory die and (ii) a second individual memory die;

a first plurality of bond pads disposed on the first individual memory die;

a second plurality of bond pads disposed on the second individual memory die;

a third plurality of bond pads disposed (i) on the semiconductor die and (ii) near a first edge of the semiconductor die, wherein one or more of the first plurality of bond pads is coupled to a corresponding one or more of the third plurality of bond pads; and

a fourth plurality of bond pads disposed (i) on the semiconductor die and (ii) near a second edge of the semiconductor die, wherein the second edge of the semiconductor die is opposite to the first edge of the semiconductor die, and wherein one or more of the second plurality of bond pads is coupled to a corresponding one or more of the fourth plurality of bond pads,

wherein the first plurality of bond pads is disposed (i) on the first individual memory die and (ii) near a first edge of the first individual memory die,

wherein the second plurality of bond pads is disposed (i) on the second individual memory die and (ii) near a first edge of the second individual memory die,

wherein a second edge of the first individual memory die is still physically connected to a second edge of the second individual memory die, and

wherein the first edge of the first individual memory die is opposite to and parallel to the second edge of the first individual memory die.

9. The packaging arrangement of claim 8 , wherein the semiconductor die is coupled to the substrate via a wire bonding process.

10. The packaging arrangement of claim 8 , further comprising a redistribution layer attached to the multi-memory die.

11. The packaging arrangement of claim 10 , wherein the semiconductor die is coupled to the redistribution layer, and thereby the multi-memory die, via a wire bonding process.

12. The packaging arrangement of claim 8 , wherein the multi-memory die is attached to the substrate via an epoxy or glue.

13. The packaging arrangement of claim 8 , wherein the semiconductor die is attached to the multi-memory die via an epoxy or glue.

14. The packaging arrangement of claim 8 , wherein:

the semiconductor die is disposed on a boundary between the first individual memory die and the second individual memory die.

15. The packaging arrangement of claim 8 , further comprising:

a fifth plurality of bond pads disposed (i) on the semiconductor die and (ii) near a third edge of the semiconductor die, wherein the third edge of the semiconductor die is perpendicular to the first edge of the semiconductor die; and

a sixth plurality of bond pads disposed on the substrate, wherein one or more of the fifth plurality of bond pads is coupled to a corresponding one or more of the sixth plurality of bond pads.

Assignments (7)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jun 16, 2020
From: CAVIUM INTERNATIONAL
To: MARVELL ASIA PTE, LTD.
Reel/Frame 053475/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 20, 2020
From: MARVELL INTERNATIONAL LTD.
To: CAVIUM INTERNATIONAL
Reel/Frame 052918/0001 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Jan 29, 2020
From: MARVELL WORLD TRADE LTD.
To: MARVELL INTERNATIONAL LTD.
Reel/Frame 051778/0537 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 2, 2013
From: MARVELL SEMICONDUCTOR, INC.
To: MARVELL INTERNATIONAL LTD.
Reel/Frame 031533/0141 →
LICENSE Recorded Nov 2, 2013
From: MARVELL WORLD TRADE LTD.
To: MARVELL INTERNATIONAL, LTD.
Reel/Frame 031533/0149 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 2, 2013
From: SUTARDJA, SEHAT
To: MARVELL SEMICONDUCTOR, INC.
Reel/Frame 031533/0144 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 2, 2013
From: MARVELL INTERNATIONAL, LTD.
To: MARVELL WORLD TRADE LTD.
Reel/Frame 031533/0146 →
Continuity (3)
Provisional Application 61674703 · Jul 23, 2012
Provisional Application 61675626 · Jul 25, 2012
Related Publication 20140021598A1 · Jan 23, 2014