Oxide semiconductor stacked film and semiconductor device
An oxide semiconductor stacked film which does not easily cause a variation in electrical characteristics of a transistor and has high stability is provided. Further, a transistor which includes the oxide semiconductor stacked film in its channel formation region and has stable electrical characteristics is provided. An oxide semiconductor stacked film includes a first oxide semiconductor layer, a second oxide semiconductor layer, and a third oxide semiconductor layer which are sequentially stacked and each of which contains indium, gallium, and zinc. The content percentage of indium in the second oxide semiconductor layer is higher than that in the first oxide semiconductor layer and the third oxide semiconductor layer, and the absorption coefficient of the oxide semiconductor stacked film, which is measured by the CPM, is lower than or equal to 3×10 −3 /cm in an energy range of 1.5 eV to 2.3 eV.
1. A semiconductor device comprising:
a first gate electrode layer;
a first insulating film over the first gate electrode layer;
an oxide semiconductor stacked film over the first insulating film; and
a pair of electrode layers in contact with the oxide semiconductor stacked film,
wherein the oxide semiconductor stacked film comprises:
a first oxide semiconductor layer;
a second oxide semiconductor layer over the first oxide semiconductor layer; and
a third oxide semiconductor layer over the second oxide semiconductor layer,
wherein each of the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer comprises indium,
wherein a content percentage of indium in the second oxide semiconductor layer is higher than a content percentage of indium in the first oxide semiconductor layer and a content percentage of indium in the third oxide semiconductor layer,
wherein an absorption coefficient of a channel formation region in the oxide semiconductor stacked film, which is measured by the CPM, is lower than or equal to 3×10 −3 /cm in an energy range of 1.5 eV to 2.3 eV, and
wherein a conduction band of each of the first oxide semiconductor layer and the third oxide semiconductor layer is higher than a conduction band of the second oxide semiconductor layer.
2. The semiconductor device according to claim 1 , wherein the second oxide semiconductor layer comprises a crystal part whose c-axis is substantially perpendicular to a surface of the oxide semiconductor stacked film.
3. The semiconductor device according to claim 1 ,
wherein the second oxide semiconductor layer further comprises gallium, and
wherein in the second oxide semiconductor layer, the content percentage of indium is higher than a content percentage of gallium.
4. The semiconductor device according to claim 1 , wherein the second oxide semiconductor layer has a stacked-layer structure.
5. The semiconductor device according to claim 1 , wherein a conductivity of the second oxide semiconductor layer is higher than a conductivity of the first oxide semiconductor layer and a conductivity of the third oxide semiconductor layer.
6. The semiconductor device according to claim 1 further comprising an oxide insulating film over the pair of electrode layers and the oxide semiconductor stacked film.
7. The semiconductor device according to claim 1 further comprising:
a second insulating film over the pair of electrode layers and the oxide semiconductor stacked film, and
a second gate electrode layer over the second insulating film.
8. The semiconductor device according to claim 1 , wherein each of the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer further comprises gallium and zinc.
9. A semiconductor device comprising:
an oxide semiconductor stacked film;
a pair of electrode layers in contact with the oxide semiconductor stacked film;
a gate insulating film over the oxide semiconductor stacked film; and
a gate electrode layer over the gate insulating film,
wherein the oxide semiconductor stacked film comprises:
a first oxide semiconductor layer;
a second oxide semiconductor layer over the first oxide semiconductor layer; and
a third oxide semiconductor layer over the second oxide semiconductor layer,
wherein each of the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer comprises indium,
wherein a content percentage of indium in the second oxide semiconductor layer is higher than a content percentage of indium in the first oxide semiconductor layer and a content percentage of indium in the third oxide semiconductor layer,
wherein an absorption coefficient of a channel formation region in the oxide semiconductor stacked film, which is measured by the CPM, is lower than or equal to 3×10 −3 /cm in an energy range of 1.5 eV to 2.3 eV, and
wherein a conduction band of each of the first oxide semiconductor layer and the third oxide semiconductor layer is higher than a conduction band of the second oxide semiconductor layer.
10. The semiconductor device according to claim 9 , wherein the second oxide semiconductor layer comprises a crystal part whose c-axis is substantially perpendicular to a surface of the oxide semiconductor stacked film.
11. The semiconductor device according to claim 9 ,
wherein the second oxide semiconductor layer further comprises gallium, and
wherein in the second oxide semiconductor layer, the content percentage of indium is higher than a content percentage of gallium.
12. The semiconductor device according to claim 9 , wherein the second oxide semiconductor layer has a stacked-layer structure.
13. The semiconductor device according to claim 9 , wherein a conductivity of the second oxide semiconductor layer is higher than a conductivity of the first oxide semiconductor layer and a conductivity of the third oxide semiconductor layer.
14. The semiconductor device according to claim 9 further comprising an oxide insulating film over the pair of electrode layers and the oxide semiconductor stacked film.
15. The semiconductor device according to claim 9 , wherein each of the first oxide semiconductor layer, the second oxide semiconductor layer, and the third oxide semiconductor layer further comprises gallium and zinc.