Image sensor and display
An image sensor, for example for incorporation within an active matrix display, comprises an array of sensor elements 10 . Each sensor element ( 10 ) comprise an amplifying transistor (M 1 ) whose gate is connected to an integrating node ( 11 ). The integrating node ( 11 ) is connected to one plate of an integrating capacitor (C 1 ) and to one electrode of a photodiode (D 1 ), whose other electrode is connected to a resetting line (RST). The sensor element ( 10 ) performs a repeating sensing cycle comprising a resetting phase, an integrating phase and a reading phase. During the resetting phase, the resetting line (RST) receives a voltage which forward-biases the photodiode (D 1 ) so as to charge the integrating node ( 11 ) to a predetermined voltage. The resetting line (RST) is then returned to a voltage for reverse-biasing the photodiode (D 1 ) so that the integrating and reading phases may be performed.
1. An image sensor comprising at least one sensor element, each of the at least one sensor element comprising a semiconductor amplifying element, an integrating capacitor, and a photodiode having a first electrode, which is connected to a first control electrode of the amplifying element and a first terminal of the capacitor, and a second electrode connected to a first control input, which is arranged to receive, during a sensing phase, a first voltage for reverse-biasing the photodiode and to receive, during a resetting phase, a second voltage for forward-biasing the photodiode so as to charge the capacitor to a predetermined voltage.
2. A sensor as claimed in claim 1 , in which the resetting and sensing phases are repeated cyclically.
3. A sensor as claimed in claim 1 , in which the photodiode is a lateral photodiode.
4. A sensor as claimed in claim 1 , in which the photodiode is a thin film diode.
5. A sensor as claimed in claim 1 , in which the amplifying element comprises a voltage-follower arrangement.
6. A sensor as claimed in claim 1 , in which the amplifying element comprises a first transistor.
7. A sensor as claimed in claim 6 , in which the first transistor is a thin film transistor.
8. A sensor as claimed in claim 6 , in which the first transistor is a field effect transistor.
9. A sensor as claimed in claim 5 , in which the first transistor is a field effect transistor, the first transistor is connected as a source-follower and the first control electrode comprises the transistor gate.
10. A sensor as claimed in claim 1 , comprising a semiconductor selection element having a main conductive path connected in series with that of the amplifying element and a second control electrode connected to a second input for controlling selection of the sensor element during a reading phase.
11. A sensor as claimed in claim 10 , in which the selection element comprises a second transistor.
12. A sensor as claimed in claim 11 , in which the second transistor is a thin film transistor.
13. A sensor as claimed in claim 1 , in which the capacitor has a second terminal connected to a second control input, which is arranged to receive, during the sensing phase, a third voltage for disabling the amplifying element and for permitting integration by the capacitor of a photocurrent from the photodiode and to receive, during a reading phase, a fourth voltage for enabling the amplifying element.
14. A sensor as claimed in claim 1 , in which the at least one sensor element comprises a plurality of sensor elements arranged as a first array comprising rows and columns.
15. A sensor as claimed in claim 14 , comprising first row control inputs, each of which is connected to the first control inputs of the sensor elements of a respective row.
16. A sensor as claimed in claim 14 , comprising: a semiconductor selection element having a main conductive path connected in series with that of the amplifying element; a second control electrode connected to a second input for controlling selection of the sensor element during a reading phase; and second row control inputs, each of which is connected to the second control inputs of the sensor elements of a respective row.
17. A sensor as claimed in claim 14 , comprising column outputs, each of which is connected to outputs of the sensor elements of a respective column.
18. A sensor as claimed in claim 17 , in which each column is connected to a respective biasing element.
19. A sensor as claimed in claim 18 , in which each biasing element comprises a third transistor.
20. A sensor as claimed in claim 19 , in which each third transistor is a thin film transistor.
21. A sensor as claimed in claim 14 , comprising an active matrix addressing arrangement for addressing the sensor elements.
22. A display comprising a sensor as claimed in claim 1 and at least one display pixel.
23. A display as claimed in claim 22 , in which the at least one sensor element comprises a plurality of sensor elements arranged as a first array comprising rows and columns, and the at least one pixel comprises a plurality of pixels arranged as a second array comprising a plurality of the rows and a plurality of the columns.
24. A display as claimed in claim 23 , in which each of the sensor elements forms part of at least one pixel.
25. A display as claimed in claim 23 , in which the sensor comprises column outputs, each of which is connected to outputs of the sensor elements of a respective column, the display comprising pixel column data lines, at least two of which connect the column outputs to the sensor elements of the respective columns.
26. A display as claimed in claim 23 , in which the pixels are liquid crystal pixels.
27. A display as claimed in claim 23 , in which the sensor comprises an active matrix addressing arrangement for addressing the sensor elements, the active matrix addressing arrangement is being arranged to address each row of sensor elements during a line blanking period of a corresponding row of pixels.