Semiconductor device manufacturing method and manufacturing apparatus
According to one embodiment, a semiconductor device manufacturing method includes: bonding a first wafer and a second wafer to each other, to form a stack; rubbing a film attached with a fill material in a thin-film shape into a gap located between a bevel of the first wafer and a bevel of the second wafer, to fill the gap with the fill material; and thinning the first wafer.
1. A semiconductor device manufacturing method, the method comprising:
bonding a first wafer and a second wafer to each other, to form a stack;
pressing a first film attached with a fill material in a thin-film shape against a gap located between a bevel of the first wafer and a bevel of the second wafer, to fill the gap with the fill material;
removing residual fill material that extends off the gap by use of a second film after filling the gap with the fill material; and
thinning the first wafer.
2. The semiconductor device manufacturing method according to claim 1 , further comprising forming a through electrode in at least one wafer out of the first wafer and the second wafer before formation of the stack.
3. The semiconductor device manufacturing method according to claim 1 , further comprising rotating the stack during at least one of the filling the gap with the fill material and the removing the residual material.
4. The semiconductor device manufacturing method according to claim 1 , wherein a material containing a glass material, an inorganic polymer or an organic polymer is used as the fill material.
5. The semiconductor device manufacturing method according to claim 1 , further comprising performing a treatment to cure the fill material after filling the gap with the fill material.
6. The semiconductor device manufacturing method according to claim 5 , wherein the treatment to cure the fill material is a drying treatment, a heating treatment, or a light irradiation treatment.