Memory device

1. A memory device, comprising:

first to third selection lines extending in a first direction and sequentially arranged in a second direction crossing the first direction;

multiple sets of first to third vertical pillars, each set coupled with a corresponding one of the first to third selection lines, wherein the sets are sequentially arranged in the second direction;

a first sub-interconnection connecting the third vertical pillar coupled with the first selection line to the first vertical pillar coupled with the second selection line;

a second sub-interconnection connecting the third vertical pillar coupled with the second selection line to the first vertical pillar coupled with the third selection line; and

bit lines extending in the second direction and connected to corresponding ones of the first and second sub-interconnections.

2. The memory device of claim 1 , wherein the bit lines comprise first to third bit lines sequentially arranged in the first direction,

the first bit line is connected to the first sub-interconnection,

the second bit line is connected to the second vertical pillar, and

the third bit line is connected to the second sub-interconnection.

3. The memory device of claim 2 , further comprising:

a third sub-interconnection connected to the second vertical pillar, and

wherein the second bit line is connected to the second vertical pillar via the third sub-interconnection.

4. The memory device of claim 2 , wherein the first and second sub-interconnections are connected to the first and third vertical pillars via first and third lower contacts, respectively,

the first and third bit lines are connected to the first and second sub-interconnections, respectively, via first and third upper contacts, and

the second bit line is connected to the second vertical pillar via a second lower contact and a second upper contact, wherein the second lower contact and the second upper contact are in contact with each other.

5. The memory device of claim 1 , further comprising a substrate on which the first to third selection lines are provided, and at least one cell gate provided between the substrate and each of the first to third selection lines,

wherein the vertical pillars are connected to the substrate, and wherein each vertical pillar passes through a corresponding one of the first to third selection lines and a corresponding cell gate.

6. The memory device of claim 5 , further comprising a charge storing element provided between the cell gate and a corresponding one of the vertical pillars.