Semiconductor device and electronic device including the same
A semiconductor device includes a first conductive layer, a second conductive layer spaced from the first conductive layer, a variable resistance layer interposed between the first and second conductive layers, and an impurity-doped layer provided over a side surface of the variable resistance layer. The variable resistance layer has a smaller width than the first and the second conductive layers.
1. A semiconductor device comprising:
a first conductive layer;
a second conductive layer spaced from the first conductive layer;
a variable resistance layer provided between the first conductive layer and the second conductive layer; and
an impurity-doped layer provided over a side surface of the variable resistance layer,
wherein the variable resistance layer has a smaller width than a width of the first conductive layer and a width of the second conductive layer, and
wherein the variable resistance layer is formed of a metal oxide or a chalcogenide-based material, and the impurity-doped layer is formed of a metal oxide containing a semiconductor element or a chalcogenide-based material containing a semiconductor element.
2. The semiconductor device of claim 1 , wherein the semiconductor element includes silicon or germanium.
3. The semiconductor device of claim 1 , wherein the variable resistance layer is formed of the chalcogenide-based material, the impurity-doped layer is formed of the chalcogenide-based material containing the semiconductor element, and the impurity-doped layer has a thermal resistance value higher than a thermal resistance value of the variable resistance layer.
4. The semiconductor device of claim 1 , wherein the impurity-doped layer is provided between the first conductive layer and the second conductive layer.
5. The semiconductor device of claim 1 , wherein the metal oxide of the variable resistance layer has electric resistance changeable by migration of oxygen vacancies or ions and/or the chalcogenide-based material of the variable resistance layer has electric resistance changeable by a phase change.
6. The semiconductor device of claim 1 ,
wherein the metal oxide of the variable resistance layer includes a first metal oxide layer and a second metal oxide layer over or under the first metal oxide layer,
wherein the first metal oxide layer includes a typical stoichiometric composition, and
wherein the second metal oxide layer includes an oxygen-deficient stoichiometric material.
7. The semiconductor device of claim 1 , the device further comprising a selecting element layer,
wherein the selecting element layer is provided between the first conductive layer and the variable resistance layer, or between the second conductive layer and the variable resistance layer.
8. The semiconductor device of claim 1 , wherein the first conductive layer extends in a first direction, and
wherein the second conductive layer extends in a second direction and crosses the first conductive layer.
9. The semiconductor device of claim 1 , wherein the variable resistance layer is formed of the metal oxide, the impurity-doped layer is formed of the metal oxide containing the semiconductor element, the semiconductor element is silicon, and the variable resistance layer includes silicate.
10. The semiconductor device of claim 1 , wherein the variable resistance layer is formed of the chalcogenide-based material, the impurity-doped layer is formed of the chalcogenide-based material containing the semiconductor element, the semiconductor element is silicon, and the variable resistance layer includes silicide.
11. The semiconductor device of claim 1 , wherein the impurity-doped layer and the chalcogenide-based material are doped with the semiconductor elements.
12. An electronic device comprising:
a variable resistance memory device configured to store data and maintain the stored data regardless of power supply; and
a memory controller configured to control input/output of the data stored in the variable resistance memory device according to a command inputted from outside,
wherein the variable resistance memory device comprises:
a first conductive layer;
a second conductive layer spaced from the first conductive layer;
a variable resistance layer provided between the first conductive layer and the second conductive layer; and
an impurity-doped layer provided over a side surface of the variable resistance layer, and
wherein a width of the variable resistance layer is smaller than a width of the first conductive layer and a width of the second conductive layer, and
wherein the impurity-doped layer is doped with a semiconductor element.
13. The electronic device of claim 12 , wherein the semiconductor element is chosen from silicon and germanium.