Organic photoelectric device and image sensor each having active layer including quinacridone and subPC compounds

1. An organic photoelectronic device, comprising:

a first electrode and a second electrode facing each other; and

an active layer between the first electrode and the second electrode, the active layer including,

a compound represented by the following Chemical Formula 1, and

a compound represented by the following Chemical Formula 3:

wherein, in the Chemical Formula 1,

each of the R 1 and R 2 are independently one of hydrogen, a substituted or unsubstituted C 1 to C 30 alkyl group, a substituted or unsubstituted C 6 or C 30 aryl group, a substituted or unsubstituted C 3 to C 30 heteroaryl group, a substituted or unsubstituted C 1 to C 30 alkoxy group, and a combination thereof, and

each of R 3 to R 12 are independently one of hydrogen, a substituted or unsubstituted C 1 to C 30 alkyl group, a substituted or unsubstituted C 6 to C 30 aryl group, a substituted or unsubstituted C 3 to C 30 heteroaryl group, a substituted or unsubstituted C 1 to C 30 alkoxy group, a halogen atom, a halogen-containing group, and a combination thereof,

wherein, in the Chemical Formula 3,

each of R m to R y are independently one of hydrogen, a substituted or unsubstituted C 1 to C 30 alkyl group, a substituted or unsubstituted C 6 to C 30 aryl group, a substituted or unsubstituted C 3 to C 30 heteroaryl group, a halogen atom, a halogen-containing group, and a combination thereof, and

Z is a C 6 to C 20 aryloxy group having at least one halogen atom, wherein the compound represented by Chemical Formula 1 is a p-type semiconductor,

the compound represented by Chemical Formula 3 is an n-type semiconductor, and

the p-type semiconductor and the n-type semiconductor form a pn junction.

2. The organic photoelectronic device of claim 1 , wherein the Z of the Chemical Formula 3 is a phenoxy group having at least one fluorine atom.

3. The organic photoelectronic device of claim 2 , wherein the Z of the Chemical Formula 3 is represented by the following Chemical Formula A:

4. The organic photoelectronic device of claim 1 , wherein each of the R m to R y of the Chemical Formula 3 are independently hydrogen or at least one thereof includes a halogen atom.

5. The organic photoelectronic device of claim 1 , wherein the compound represented by the Chemical Formula 3 includes at least one selected from compounds represented by the following Chemical Formula 3a or Chemical Formula 3b:

6. The organic photoelectronic device of claim 1 , wherein the compound represented by the Chemical Formula 1 includes at least one selected from compounds represented by the following Chemical Formulae 1a to 1e:

wherein, in the Chemical Formulae 1a to 1e,

each of R 1 and R 2 are independently hydrogen, a substituted or unsubstituted C 1 to C 30 alkyl group, a substituted or unsubstituted C 6 to C 30 aryl group, a substituted or unsubstituted C 3 to C 30 heteroaryl group, and a combination thereof.

7. The organic photoelectronic device of claim 1 , wherein

the compound represented by the Chemical Formula 1 is a p-type semiconductor, and

the compound represented by the Chemical Formula 3 is an n-type semiconductor.

8. The organic photoelectronic device of claim 1 , wherein the active layer selectively absorbs light in a green wavelength region.

9. The organic photoelectronic device of claim 1 , wherein the active layer has a maximum absorption peak in a wavelength region of about 500 nm to about 600 nm.

10. The organic photoelectronic device of claim 1 , wherein the active layer includes an intrinsic layer including the compound represented by the Chemical Formula 1 or 2 and the compound represented by the Chemical Formula 3 at a ratio of about 1:100 to about 100:1.

11. The organic photoelectronic device of claim 10 , wherein the active layer includes an intrinsic layer including the compound represented by the Chemical Formula 1 and the compound represented by the Chemical Formula 3 at a ratio of about 1:10 to about 10:1.

12. The organic photoelectronic device of claim 10 , wherein the active layer further comprises a p-type layer including the compound represented by the Chemical Formula 1.

13. The organic photoelectronic device of claim 10 , wherein the active layer further comprises an n-type layer including the compound represented by the Chemical Formula 3.

14. The organic photoelectronic device of claim 10 , wherein the active layer comprises:

a p-type layer on one side of the intrinsic layer, the p-type layer including the compound represented by the Chemical Formula 1; and

an n-type layer on the other side of the intrinsic layer, the n-type layer including the compound represented by the Chemical Formula 3.

15. The organic photoelectronic device of claim 1 , wherein the active layer includes a p-type layer including the compound represented by the Chemical Formula 1 and an n-type layer including the compound represented by the Chemical Formula 3.

16. The organic photoelectronic device of claim 1 , further comprising:

a charge auxiliary layer between at least one of the first electrode and the active layer, and the second electrode and the active layer.

17. The organic photoelectronic device of claim 1 , wherein the first electrode is an anode and the second electrode is a cathode.

18. An image sensor comprising the organic photoelectronic device according to claim 1 .

19. The image sensor of claim 18 , further comprising:

a semiconductor substrate including a photo-sensing device;

a lower insulation layer on the semiconductor substrate;

a color filter on the lower insulation layer; and

an upper insulation layer on the color filter,

wherein the organic photoelectronic device is on the upper insulation layer.