Solid-state imaging device and camera system
A solid-state imaging device and a camera system are disclosed. The solid-state imaging device includes a pixel unit and a pixel signal readout circuit. The pixel signal readout circuit includes a plurality of comparators disposed to correspond to a pixel column array, and a plurality of counters. Each counter includes a first amplifier, a second amplifier, and a mirror circuit to from a current mirror in parallel with the second amplifier. The first amplifier includes differential transistors, initializing switches connected between gates and collectors of the differential transistors, and first and second capacitors connected to each of the gates of the differential transistors. The second amplifier includes an initializing switch and a third capacitor. The mirror circuit includes a gate input transistor whose gate is inputted with a voltage sampled by the first amplifier or a voltage sampled by the second amplifier.
1. A solid-state imaging device comprising:
a pixel circuit; and
a pixel signal readout circuit including a comparator comprising:
a first circuit;
a second circuit including a first transistor being connected to the first circuit, a second transistor, and a node being disposed between the first transistor and the second transistor;
a switch disposed between a gate and a drain of the second transistor; and
a third circuit connected to the second circuit, the third circuit including a third transistor being connected to the node and a fourth transistor connected to the third transistor.
2. The solid-state imaging device according to claim 1 , wherein the switch is configured to initialize the comparator.
3. The solid-state imaging device according to claim 1 , wherein a gate of the third transistor is connected to the node.
4. The solid-state imaging device according to claim 1 , wherein a gate of the first transistor is connected to the first circuit, and a source or a drain of the first transistor is connected to a gate of the third transistor through the node.
5. The solid-state imaging device according to claim 1 , wherein the first transistor and the third transistor have a first conductivity type, and the second transistor and the fourth transistor have a second conductivity type.
6. The solid-state imaging device according to claim 5 , wherein the first conductivity type is a p-type and the second conductivity type is an n-type.
7. The solid-state imaging device according to claim 1 , wherein the first transistor and the second transistor are connected in series.
8. The solid-state imaging device according to claim 1 , wherein the third circuit forms a current minor with the second circuit.
9. A solid-state imaging device comprising:
a pixel circuit; and
a pixel signal readout circuit including a comparator including:
a first circuit;
a second circuit including a first transistor being connected to the first circuit, a second transistor, and a node being disposed between the first transistor and the second transistor; and
a third circuit connected to the second circuit, the third circuit including a third transistor being connected to the node and a fourth transistor connected to the third transistor, wherein
a gate of the first transistor is connected to the first circuit, and a source or a drain of the first transistor is connected to a gate of the third transistor through the node.
10. The solid-state imaging device according to claim 9 , further comprising an initializing switch disposed between a gate and a drain of the second transistor.
11. The solid-state imaging device according to claim 9 , wherein a gate of the third transistor is connected to the node.
12. The solid-state imaging device according to claim 9 , wherein the first transistor and the third transistor have a first conductivity type, and the second transistor and the fourth transistor have a second conductivity type.
13. The solid-state imaging device according to claim 12 , wherein the first conductivity type is a p-type and the second conductivity type is an n-type.
14. The solid-state imaging device according to claim 9 , wherein the first transistor and the second transistor are connected in series.
15. The solid-state imaging device according to claim 9 , wherein the third circuit forms a current mirror with the second circuit.
16. A solid-state imaging device comprising:
a pixel circuit; and
a pixel signal readout circuit including a comparator including:
a first circuit;
a second circuit including a first transistor being connected to the first circuit, a second transistor, and a node being disposed between the first transistor and the second transistor; and
a third circuit connected to the second circuit, the third circuit including a third transistor being connected to the node and a fourth transistor connected to the third transistor,
wherein the first transistor and the second transistor are connected in series.
17. The solid-state imaging device according to claim 16 , further comprising an initializing switch disposed between a gate and a drain of the second transistor.
18. The solid-state imaging device according to claim 16 , wherein a gate of the third transistor is connected to the node.
19. The solid-state imaging device according to claim 16 , wherein a gate of the first transistor is connected to the first circuit, and a source or a drain of the first transistor is connected to a gate of the third transistor through the node.
20. The solid-state imaging device according to claim 16 , wherein the first transistor and the third transistor have a first conductivity type, and the second transistor and the fourth transistor have a second conductivity type.
21. The solid-state imaging device according to claim 20 , wherein the first conductivity type is a p-type and the second conductivity type is an n-type.
22. The solid-state imaging device according to claim 16 , wherein the third circuit forms a current mirror with the second circuit.
23. A solid-state imaging device comprising:
a pixel circuit; and
a pixel signal readout circuit including a comparator including:
a first circuit;
a second circuit including a first transistor being connected to the first circuit, a second transistor, and a node being disposed between the first transistor and the second transistor;
a switch disposed between a gate and a drain of the second transistor; and
a third circuit connected to the second circuit, the third circuit including a third transistor being connected to the node and a fourth transistor connected to the third transistor,
wherein the first transistor and the second transistor are connected in series, a gate of the first transistor is connected to the first circuit, a source or a drain of the first transistor is connected to a gate of the third transistor through the node, the first transistor and the third transistor have a first conductivity type, and the second transistor and the fourth transistor have a second conductivity type.
24. An electronic apparatus comprising:
an optical system; and
a solid-state imaging device comprising a pixel circuit and a pixel signal readout circuit including a comparator including:
a first circuit;
a second circuit including a first transistor being connected to the first circuit, a second transistor, and a node being disposed between the first transistor and the second transistor;
a switch disposed between a gate and a drain of the second transistor; and
a third circuit connected to the second circuit, the third circuit including a third transistor being connected to the node and a fourth transistor connected to the third transistor.
25. An electronic apparatus comprising:
an optical system; and
a solid-state imaging device comprising a pixel circuit and a pixel signal readout circuit including a comparator including:
a first circuit;
a second circuit including a first transistor being connected to the first circuit, a second transistor, and a node being disposed between the first transistor and the second transistor;
a switch disposed between a gate and a drain of the second transistor; and
a third circuit connected to the second circuit, the third circuit including a third transistor being connected to the node and a fourth transistor connected to the third transistor,
wherein a gate of the first transistor is connected to the first circuit, and a source or a drain of the first transistor is connected to a gate of the third transistor through the node.
26. An electronic apparatus comprising:
an optical system; and
a solid-state imaging device comprising a pixel circuit and a pixel signal readout circuit including a comparator including:
a first circuit;
a second circuit including a first transistor being connected to the first circuit, a second transistor, and a node being disposed between the first transistor and the second transistor;
a switch disposed between a gate and a drain of the second transistor; and
a third circuit connected to the second circuit, the third circuit including a third transistor being connected to the node and a fourth transistor connected to the third transistor,
wherein the first transistor and the second transistor are connected in series.
27. An electronic apparatus comprising:
an optical system; and
a solid-state imaging device comprising a pixel circuit and a pixel signal readout circuit including a comparator including:
a first circuit;
a second circuit including a first transistor being connected to the first circuit, a second transistor, and a node being disposed between the first transistor and the second transistor;
a switch disposed between a gate and a drain of the second transistor; and
a third circuit connected to the second circuit, the third circuit including a third transistor being connected to the node and a fourth transistor connected to the third transistor,
wherein the first transistor and the second transistor are connected in series, a gate of the first transistor is connected to the first circuit, a source or a drain of the first transistor is connected to a gate of the third transistor through the node, the first transistor and the third transistor have a first conductivity type, and the second transistor and the fourth transistor have a second conductivity type.