Bevel etcher
The wafer bevel etching apparatus of the present invention includes a wafer-protecting mask to cover parts of a wafer. A central region and a wafer bevel region surrounding the central region are defined on the wafer. The wafer-protecting mask includes a center sheltering region and at least one wafer bevel sheltering region. The center sheltering region can completely shelter the central region of the wafer, and the wafer bevel sheltering region extends from the outside edge of the center sheltering region, shelters parts of the wafer bevel region, and exposes the other parts of the wafer bevel region.
1. A wafer bevel etching apparatus, comprising:
a wafer-protecting mask, covering partial surfaces of a wafer, the wafer comprising a central region and a wafer bevel region surrounding the central region, the wafer-protecting mask comprising:
a center sheltering region, covering all the central region of the wafer; and
at least a wafer bevel sheltering region, extending outwardly from the center sheltering region, covering parts of the wafer bevel region, and exposing the other parts of the wafer bevel region when viewed in bottom view, wherein the shape of the wafer bevel sheltering region is a semicircular tab and the wafer bevel sheltering region being configured along the edge of the center sheltering region.
2. The wafer bevel etching apparatus of claim 1 , wherein a width of the wafer bevel region is in a range from 1 millimeter (mm) to 3 millimeters.
3. The wafer bevel etching apparatus of claim 1 , wherein the wafer bevel sheltering region of the wafer-protecting mask extends outwardly from an outside edge of the center sheltering region to a circumference of the wafer.
4. The wafer bevel etching apparatus of claim 1 , wherein the wafer has at least a wafer mark disposed in the wafer bevel region on a bottom surface of the wafer.
5. The wafer bevel etching apparatus of claim 4 , wherein the wafer bevel sheltering region of the wafer-protecting mask covers the wafer mark of the wafer.
6. The wafer bevel etching apparatus of claim 5 , wherein the wafer mark comprises a laser code.
7. The wafer bevel etching apparatus of claim 1 , wherein the wafer comprises at least a semiconductor element and at least a wafer mark, the semiconductor element is disposed on the central region near a top surface of the wafer, and the wafer mark is disposed on the wafer bevel region on the top surface of the wafer.
8. The wafer bevel etching apparatus of claim 7 , wherein the wafer bevel sheltering region of the wafer-protecting mask covers the wafer mark of the wafer.
9. The wafer bevel etching apparatus of claim 1 , wherein the wafer-protecting mask comprises a block, a protecting ring and at least a protrusion, the protecting ring surrounds the block, and the protrusion extend outwardly from an outside edge of the protecting ring.
10. The wafer bevel etching apparatus of claim 9 , wherein the block and the protecting ring form the center sheltering region of the wafer-protecting mask, and the protrusion forms the wafer bevel sheltering region of the wafer-protecting mask.
11. The wafer bevel etching apparatus of claim 10 , wherein the block comprises a pedestal for supporting the wafer.
12. The wafer bevel etching apparatus of claim 1 , wherein the wafer bevel sheltering region physically contacts the center sheltering region.
13. The wafer bevel etching apparatus of claim 12 , wherein the wafer bevel sheltering region and the center sheltering region are a monolithically formed structure.