Power devices and method for manufacturing the same
A power device includes a substrate, a silicon carbide (Si x C 1-x ) layer on one surface of the substrate, wherein 0<x<1, and a re-grown gallium nitride (GaN) layer formed by etching a part of the Si x C 1-x layer and growing GaN from an etched area of the Si x C 1-x layer.
1. A power device, comprising:
a substrate;
a silicon carbide (Si x C 1-x ) layer on one surface of the substrate, wherein 0<x<1, the Si x C 1-x layer including an etched area, the etched area of the Si x C 1-x layer being in a form of a depression in the Si x C 1-x layer; and
a re-grown gallium nitride (GaN) layer grown from the etched area of the Si x C 1-x layer such that the re-grown GaN layer fills the etched area of the Si x C 1-x layer and directly contacts a bottom and sides of the Si x C 1-x layer in the etched area.
2. The power device as claimed in claim 1 , wherein:
the substrate is an n-type SiC substrate, and
the re-grown GaN layer is a p-GaN layer doped with p-type impurities.
3. The power device as claimed in claim 2 , wherein the power device is a Schottky barrier diode (SBD) and further comprises:
a first electrode on the Si x C 1-x layer; and
a second electrode on another surface of the substrate, the other surface being opposite to the one surface on which the Si x C 1-x layer is located.
4. The power device as claimed in claim 3 , wherein the Si x C 1-x layer is an n-type Si x C 1-x layer doped with n-type impurities.
5. The power device as claimed in claim 2 , wherein a doping concentration of the p-type impurities of the p-GaN layer is about 1.0×10 16 /cm 3 to about 1.0×10 20 /cm 3 .
6. The power device as claimed in claim 1 , wherein:
the substrate is a p-type SiC layer, and
the re-grown GaN layer is an n-GaN layer doped with n-type impurities.
7. The power device as claimed in claim 6 , wherein the power device is a field effect transistor (FET) and further comprises:
a gate electrode disposed on the Si x C 1-x layer; and
a source electrode and a drain electrode on the n-GaN layer.
8. The power device as claimed in claim 7 , wherein the Si x C 1-x layer is a p-type Si x C 1-x layer doped with p-type impurities.
9. The power device as claimed in claim 6 , wherein a doping concentration of the n-type impurities of the n-GaN layer is about 1.0×10 16 /cm 3 to about 1.0×10 20 /cm 3 .
10. The power device as claimed in claim 1 , wherein a top surface of the re-grown gallium nitride (GaN) layer is coplanar with a top surface of the Si x C 1-x layer.
11. A manufacturing method for a power device, the manufacturing method comprising:
forming a silicon carbide (Si x C 1-x ) layer on one surface of a substrate, wherein 0<x<1;
etching a part of the Si x C 1-x layer to provide an etched area, the etched area being in a form of a depression in the Si x C 1-x layer; and
growing gallium nitride (GaN) from the etched area of the Si x C 1-x layer to form a re-grown (GaN) layer, the re-grown GaN layer filling the etched area of the Si x C 1-x layer and directly contacting a bottom and sides of the etched area of the Si x C 1-x layer.
12. The manufacturing method as claimed in claim 11 , wherein the growing of GaN from the etched area of the Si x C 1-x layer to form the re-grown GaN layer is performed within a temperature range of about 1,000° C. to about 1,200° C.
13. The manufacturing method as claimed in claim 11 , wherein:
the substrate is an n-type SiC substrate, and
the re-grown GaN layer is a p-GaN layer doped with p-type impurities.
14. The manufacturing method as claimed in claim 13 , further comprising:
forming a first electrode on the re-grown GaN layer and the Si x C 1-x layer such that the first electrode is in contact with the re-grown GaN layer; and
forming a second electrode on another surface of the substrate, the other surface being opposite to the one surface on which the Si x C 1-x layer is disposed.
15. The manufacturing method as claimed in claim 14 , wherein the Si x C 1-x layer is an n-type Si x C 1-x layer doped with n-type impurities.
16. The manufacturing method as claimed in claim 11 , wherein
the substrate is a p-type SiC substrate, and
the re-grown GaN layer is an n-GaN layer doped with n-type impurities.
17. The manufacturing method as claimed in claim 16 , further comprising:
forming a gate electrode on the Si x C 1-x layer; and
forming a source electrode and a drain electrode on the n-GaN layer.
18. The manufacturing method as claimed in claim 17 , wherein the Si x C 1-x layer is a p-type Si x C 1-x layer doped with p-type impurities.