IP Library Granted Patent US 9,136,545
Granted Patent B2
US 9,136,545 · App. 12/038,007 · Granted Sep 15, 2015

Low cost fuel cell bipolar plate and process of making the same

Inventors: Gayatri Vyas Dadheech (Rochester Hills, MI); Thomas A. Trabold (Pittsford, NY); Mahmoud H. Abd Elhamid (Grosse Pointe Woods, MI)
Assignee: GM Global Technology Operations LLC
H01M8/0228H01M8/0206Y02E60/50
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Quick Facts
Patent No.
US 9,136,545
App. No.
12/038,007
Granted
Sep 15, 2015
Kind
B2
Abstract

Fuel cell bipolar plates are made by depositing a pinhole free corrosion resistant and/or a conductive layer on a metal plate using an atomic layer deposition method. In one embodiment, a conductive layer is deposited on an anodized metal plate using atomic layer deposition method. In another embodiment, at least one corrosion resistant metal oxide layer and at least one conductive layer are deposited on a metal plate individually using atomic layer deposition method. In yet another embodiment, a corrosion resistant and conductive metal oxynitride layer is deposited on a metal plate using an atomic layer deposition method.

Claims (41)

1. A process comprising:

providing a conductive metal plate having at least one fuel cell reactant gas channel formed therein configured for fluid passage;

anodizing said conductive metal plate to form a corrosion resistant surface layer having a water contact angle less than 40 degree; the anodizing comprising immersing the metal plate in an electrolyte and forming an electrochemical cell and

depositing at least one conductive layer above said corrosion resistant surface layer using an atomic layer deposition method; said conductive layer comprising at least one of metal oxides or metal oxynitrides.

2. A process as set forth in claim 1 , wherein said conductive metal plate comprises at least one of aluminum, steel, stainless steel, titanium or any alloys thereof.

3. A process as set forth in claim 2 , wherein said conductive metal plate is an aluminum metal or an aluminum metal alloy.

4. A process as set forth in claim 1 , wherein said conductive layer comprises at least one of titanium oxynitride or ruthenium oxide.

5. A process as set forth in claim 1 , wherein said atomic layer deposition method comprises a long gas pulse time of at least 10 seconds.

6. A process as set forth in claim 5 , wherein said gas pulse time is between 10 and about 30 seconds.

7. A process as set forth in claim 1 wherein the anodizing said conductive metal plate comprising exposing the metal plate to an electrolyte solution to provide a rough and pore-like metal oxide surface layer.

8. A process as set forth in claim 1 wherein the conductive layer provides a surface contact resistance of about 10 milliohms/cm 2 or less.

9. A process comprising:

providing a conductive metal plate wherein the metal plate comprises a fuel cell bipolar plate having a plurality of lands and channels in a face thereof to define a reactant gas flow field;

depositing on said metal plate a uniform and pinhole free corrosion resistance layer comprising at least one metal oxide using an atomic layer deposition method wherein a layer of metal is deposited first and thereafter causing the deposited metal to react with a reactive gas to form said at least one metal oxide; and

depositing at least one conductive layer above said corrosion resistant layer using an atomic layer deposition method; said conductive layer comprising at least one of metal oxides or metal oxynitrides.

10. A process as set forth in claim 9 , wherein said metal plate comprises aluminum, stainless steel or titanium.

11. A process as set forth in claim 9 , wherein said corrosion resistance layer comprises aluminum oxide or titanium oxide.

12. A process as set forth in claim 9 , wherein said conductive layer comprises titanium oxynitride or ruthenium oxide.

13. A process as set forth in claim 9 , wherein the corrosion resistance layer further comprises a metal carbide.

14. A process comprising:

providing a conductive metal plate wherein the metal plate comprises a fuel cell bipolar plate having a plurality of lands and channels in a face thereof to define a reactant gas flow field;

providing a material comprising a metal compound;

placing said conductive metal plate inside an atomic layer deposition chamber;

exposing said metal plate to a gas pulse comprising said material such that at least one atomic layer of said metal compound is adsorbed on the surface of said metal plate;

purging said deposition chamber with an inert gas to remove said material and;

after said metal compound being adsorbed on said metal plate, exposing said metal plate to a gas pulse comprising an oxygen compound and a nitrogen compound at a temperature between 100° and 600° C., causing said adsorbed metal compound to react with said oxygen compound and nitrogen compound to form a metal oxynitride.

15. A process as set forth in claim 14 , wherein said conductive metal plate comprises aluminum, steel, stainless steel or titanium.

16. A process as set forth in claim 14 , wherein said metal compound comprises at least one of titanium tetrachloride, titanium tetrabromide, titanium alkoxide, bis(diethylamido)bis(dimethylamido)-titanium(IV), tetrakis(diethylamido)titanium(IV), etrakis(dimethylamido)titanium(IV), tetrakis(ethylmethylamido)titanium(IV), or bis(ethylcyclopentadienyl)ruthenium(II).

17. A process as set forth in claim 14 , wherein said oxygen compound comprises atomic oxygen, water, ozone, peroxide, or oxygen gas; and said nitrogen compound comprises ammonia, hydrazine, alkyl hydrazine, nitrogen monoxide, nitrogen dioxide, amine, or nitrogen containing organic ligand.

18. A process as set forth in claim 14 , wherein said metal oxynitride is titanium oxynitride, zirconium oxynitride, hafnium oxynitrides or tantalum oxynitride.

19. A process as set forth in claim 18 , wherein said titanium oxynitride is represented by the formula TiO x N y .

20. A process as set forth in claim 14 further comprising anodizing the conductive metal plate prior to exposing the metal plate to a gas pulse comprising the metal compound.

21. A process as set forth in claim 14 , wherein the metal compound comprises at least one of vanadium, niobium, chromium, or molybdenum.

22. A process comprising:

providing a conductive metal plate having at least one fuel cell reactant gas channel formed therein configured for fluid passage;

anodizing said conductive metal plate to form a corrosion resistant surface layer having a water contact angle less than 40 degree; the anodizing comprising immersing the metal plate in an electrolyte and forming an electrochemical cell and

depositing at least one conductive layer above said corrosion resistant surface layer using an atomic layer deposition method; said conductive layer comprising at least one of titanium oxynitride or ruthenium oxide.

23. A process comprising:

providing a conductive metal plate wherein the metal plate comprises a fuel cell bipolar plate having a plurality of lands and channels in a face thereof to define a reactant gas flow field;

depositing on said metal plate a uniform and pinhole free corrosion resistance layer comprising at least one metal oxide using an atomic layer deposition method wherein a layer of metal is deposited first and thereafter causing the deposited metal to react with a reactive gas to form said at least one metal oxide; and

depositing at least one conductive layer above said corrosion resistant layer using an atomic layer deposition method; said conductive layer comprising at least one of titanium oxynitride or ruthenium oxide.

Assignments (12)
RELEASE OF SECURITY INTEREST Recorded Nov 7, 2014
From: WILMINGTON TRUST COMPANY
To: GM GLOBAL TECHNOLOGY OPERATIONS LLC
Reel/Frame 034384/0758 →
CHANGE OF NAME Recorded Feb 10, 2011
From: GM GLOBAL TECHNOLOGY OPERATIONS, INC.
To: GM GLOBAL TECHNOLOGY OPERATIONS LLC
Reel/Frame 025781/0211 →
SECURITY AGREEMENT Recorded Nov 8, 2010
From: GM GLOBAL TECHNOLOGY OPERATIONS, INC.
To: WILMINGTON TRUST COMPANY
Reel/Frame 025324/0475 →
RELEASE OF SECURITY INTEREST Recorded Nov 5, 2010
From: UAW RETIREE MEDICAL BENEFITS TRUST
To: GM GLOBAL TECHNOLOGY OPERATIONS, INC.
Reel/Frame 025315/0001 →
RELEASE OF SECURITY INTEREST Recorded Nov 4, 2010
From: UNITED STATES DEPARTMENT OF THE TREASURY
To: GM GLOBAL TECHNOLOGY OPERATIONS, INC.
Reel/Frame 025245/0780 →
SECURITY AGREEMENT Recorded Aug 28, 2009
From: GM GLOBAL TECHNOLOGY OPERATIONS, INC.
To: UAW RETIREE MEDICAL BENEFITS TRUST
Reel/Frame 023162/0187 →
SECURITY AGREEMENT Recorded Aug 27, 2009
From: GM GLOBAL TECHNOLOGY OPERATIONS, INC.
To: UNITED STATES DEPARTMENT OF THE TREASURY
Reel/Frame 023156/0215 →
RELEASE OF SECURITY INTEREST Recorded Aug 21, 2009
From: CITICORP USA, INC. AS AGENT FOR BANK PRIORITY SECURED PARTIES; CITICORP USA, INC. AS AGENT FOR HEDGE PRIORITY SECURED PARTIES
To: GM GLOBAL TECHNOLOGY OPERATIONS, INC.
Reel/Frame 023155/0880 →
RELEASE OF SECURITY INTEREST Recorded Aug 20, 2009
From: UNITED STATES DEPARTMENT OF THE TREASURY
To: GM GLOBAL TECHNOLOGY OPERATIONS, INC.
Reel/Frame 023124/0670 →
SECURITY AGREEMENT Recorded Apr 16, 2009
From: GM GLOBAL TECHNOLOGY OPERATIONS, INC.
To: CITICORP USA, INC. AS AGENT FOR BANK PRIORITY SECURED PARTIES; CITICORP USA, INC. AS AGENT FOR HEDGE PRIORITY SECURED PARTIES
Reel/Frame 022554/0479 →
SECURITY AGREEMENT Recorded Feb 4, 2009
From: GM GLOBAL TECHNOLOGY OPERATIONS, INC.
To: UNITED STATES DEPARTMENT OF THE TREASURY
Reel/Frame 022201/0448 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Feb 27, 2008
From: DADHEECH, GAYATRI VYAS; TRABOLD, THOMAS A.; ABD ELHAMID, MAHMOUD H.
To: GM GLOBAL TECHNOLOGY OPERATIONS, INC.
Reel/Frame 020565/0794 →
Continuity (1)
Related Publication 20090214927A1 · Aug 27, 2009