IP Library › Granted Patent US 9,142,598
Granted Patent B2
US 9,142,598 · App. 13/527,923 · Granted Sep 22, 2015

Light-emitting panel, light-emitting device using the light-emitting panel, and method for manufacturing the light-emitting panel

Inventors: Hideto Ohnuma (Kanagawa, JP); Noriko Miyairi (Kanagawa, JP); Naoyuki Senda (Kanagawa, JP)
Assignee: Semiconductor Energy Laboratory Co., Ltd.
H01L27/3246H01L51/0085H01L51/5012H01L51/5221H01L2251/558
View Patent ↗
Loading inventors, assignments & file history…
Monitor This Case
Get email alerts when status or documents change.
Order Certified Copies
Most orders are placed with the USPTO same day — all within 24 business hours.
Order via The Patent Place →
Pre-filled with this patent's details
Quick Facts
Patent No.
US 9,142,598
App. No.
13/527,923
Granted
Sep 22, 2015
Kind
B2
Abstract

To provide a light-emitting panel in which the occurrence of crosstalk is suppressed. To provide a method for manufacturing a light-emitting panel in which the occurrence of crosstalk is suppressed. The light-emitting panel includes a first electrode of one light-emitting element, a first electrode of the other light-emitting element, and an insulating partition which separates the two first electrodes. A portion with a thickness A 1 smaller than a thickness A 0 of a portion of the layer containing a light-emitting organic compound, which overlaps with a side surface of the partition, is included. The ratio (B 1 /B 0 ) of a thickness B 1 of a portion of the second electrode, which overlaps with a side surface of the partition, to a thickness B 0 of a portion of the second electrode, which overlaps with the first electrode, is higher than the ratio (A 1 /A 0 ).

Claims (61)

1. A light-emitting panel comprising:

at least two first electrodes adjacent to each other over a substrate;

a partition formed between the at least two first electrodes and covering partially top surfaces of the at least two first electrodes;

a layer containing a light-emitting compound over the at least two first electrodes and the partition; and

a second electrode over the layer containing the light-emitting compound, the second electrode overlapping with the at least two first electrodes and the partition,

wherein the layer containing the light-emitting compound includes a portion of a thickness A 0 over one of the at least two first electrodes, and a portion of a thickness A 1 over a side surface of the partition, the thickness A 1 being smaller than half of the thickness A 0 ,

wherein the second electrode includes a portion of a thickness B 0 over one of the at least two first electrodes, and a portion of a thickness B 1 over the side surface of the partition, a ratio B 1 /B 0 being higher than a ratio A 1 /A 0 , and

wherein a portion of the layer containing the light-emitting compound overlapping with a top surface of the partition is thicker than the portion of the thickness A 1 over the side surface of the partition.

2. The light-emitting panel according to claim 1 ,

wherein the side surface forms an angle of greater than or equal to 55° and less than or equal to 90° with the substrate.

3. The light-emitting panel according to claim 1 ,

wherein the partition includes a side surface having an angle of greater than or equal to 90° and less than or equal to 100° with respect to the substrate.

4. The light-emitting panel according to claim 1 ,

wherein B 1 is greater than B 0 .

5. The light-emitting panel according to claim 1 , further comprising a spacer formed over the partition,

wherein the spacer is covered with the layer containing the light-emitting compound and the second electrode.

6. The light-emitting panel according to claim 1 ,

wherein the light-emitting compound is an organic light-emitting compound.

7. The light-emitting panel according to claim 1 ,

wherein the at least two first electrodes are respectively part of a first light-emitting element and a second light-emitting element, each of the first and the second light-emitting elements comprising the layer containing the light-emitting compound and the second electrode.

8. The light-emitting panel according to claim 1 ,

wherein the layer containing the light-emitting compound includes a light-emitting unit and a charge generation layer, and

wherein the charge generation layer includes a substance having a high hole-transport property and an acceptor substance with respect to the substance having a high hole-transport property, and is provided between the light-emitting unit and one of the at least two first electrodes.

9. The light-emitting panel according to claim 1 ,

wherein the layer containing the light-emitting compound includes a light-emitting unit and an electron-injection buffer, and

wherein the electron-injection buffer includes a substance having a high electron-transport property and a donor substance with respect to the substance having a high electron-transport property, and is provided between the light-emitting unit and one of the at least two first electrodes.

10. The light-emitting panel according to claim 1 ,

wherein the layer containing the light-emitting compound includes at least two light-emitting units and at least one intermediate layer, and

wherein the at least one intermediate layer is provided with an electron-injection buffer including a substance having a high electron-transport property and a donor substance with respect to the substance having a high electron-transport property, and is provided between the at least two light-emitting units.

11. A light-emitting device comprising the light-emitting panel according to claim 1 .

12. A light-emitting panel comprising:

at least two first electrodes adjacent to each other over a substrate;

an insulating layer formed between the at least two first electrodes and covering partially top surfaces of the at least two first electrodes;

a layer containing a light-emitting compound over the at least two first electrodes and the insulating layer; and

a second electrode over the layer containing the light-emitting compound, the second electrode overlapping with the at least two first electrodes and the insulating layer,

wherein the layer containing the light-emitting compound includes a portion of a thickness A 0 over one of the at least two first electrodes, and a portion of a thickness A 1 over a side surface of the insulating layer, the thickness A 1 being smaller than the thickness A 0 , and

wherein the second electrode includes a portion of a thickness B 0 over one of the at least two first electrodes, and a portion of a thickness B 1 over the side surface of the insulating layer partition, a ratio B 1 /B 0 being higher than a ratio A 1 /A 0 , and

wherein a portion of the layer containing the light-emitting compound overlapping with a top surface of the insulating layer is thicker than the portion of the thickness A 1 over the side surface of the insulating layer.

13. The light-emitting panel according to claim 12 ,

wherein the thickness A1 is smaller than half of the thickness A 0 .

14. The light-emitting panel according to claim 12 ,

wherein the insulating layer comprises a partition and a spacer on top of and in direct contact with the partition.

15. The light-emitting panel according to claim 12 ,

wherein the insulating layer comprises a partition and a spacer on top of and in direct contact with the partition, the spacer comprising a rounded top surface.

16. The light-emitting panel according to claim 12 ,

wherein the at least two first electrodes are respectively part of a first light-emitting element and a second light-emitting element, each of the first and the second light-emitting elements comprising the layer containing the light-emitting compound and the second electrode.

17. A light-emitting device comprising the light-emitting panel according to claim 12 .

18. A method for manufacturing a light-emitting panel comprising:

forming at least two first electrodes adjacent to each other over a substrate;

forming a partition between the at least two first electrodes, the partition covering partially top surfaces of the at least two first electrodes;

forming a layer containing a light-emitting compound by a first deposition method, the first deposition method having directivity in a direction vertical to the substrate,

forming a second electrode by a second deposition method,

wherein the first deposition method is such that the layer containing the light-emitting compound includes a portion of a thickness A 0 over one of the at least two first electrodes, and a portion of a thickness A 1 over a side surface of the partition, the thickness A1 being smaller than half of the thickness A 0 ,

wherein the first deposition method is such that a portion of the layer containing the light-emitting compound overlapping with a top surface of the partition is thicker than the portion of the thickness A 1 over the side surface of the partition, and

wherein the second deposition method is such that the second electrode includes a portion of a thickness B 0 over one of the at least two first electrodes, and a portion of a thickness B 1 over the side surface of the partition, a ratio B 1 /B 0 being higher than a ratio A 1 /A 0 .

19. The method for manufacturing a light-emitting panel according to claim 18 ,

wherein the first deposition method is a resistance heating method and the second deposition method is a sputtering method.

20. The method for manufacturing a light-emitting panel according to claim 18 ,

wherein the side surface forms an angle of greater than or equal to 55° and less than or equal to 90° with the substrate.

21. The method for manufacturing a light-emitting panel according to claim 18 ,

wherein the side surface forms an angle of greater than or equal to 90° and less than or equal to 100° with the substrate.

Assignments (1)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Aug 28, 2012
From: OHNUMA, HIDETO; MIYAIRI, NORIKO; SENDA, NAOYUKI
To: SEMICONDUCTOR ENERGY LABORATORY CO., LTD.
Reel/Frame 028861/0989 →
Priority Claims (1)
JP 2011-141001 · Jun 24, 2011 · national
Continuity (1)
Related Publication 20120326201A1 · Dec 27, 2012