Light emitting device
A light emitting device including a light emitting structure having a first conductive semiconductor layer, an active layer disposed under the active layer and a second conductive semiconductor layer disposed under the active layer; a trench formed in a portion of the light emitting structure; a current barrier layer in the trench and configured to hinder current supply to the active layer at a portion where the trench is located and to block the active layer over the trench from emitting light; and a first electrode on the first conductive semiconductor layer above the portion where the trench is located.
1. A light emitting device, comprising:
a light emitting structure including a first conductive semiconductor layer, an active layer disposed under the first conductive semiconductor layer, and a second conductive semiconductor layer disposed under the active layer;
a trench in the light emitting structure;
a current barrier layer in the trench;
a first electrode on an upper side of the light emitting structure; and
a second electrode on a bottom side of the light emitting structure,
wherein the second electrode comprises a protruding portion extending into the light emitting structure and the protruding portion is in the trench,
wherein a substantially central portion of the protruding portion spatially overlaps with a substantially central portion of the first electrode,
wherein a length of the first electrode is shorter than that of a top surface of the protruding portion in a cross section, and
wherein the second electrode further comprises:
a substrate; and
a reflection layer disposed between the current barrier layer and the substrate, the reflection layer being formed in a structure partially filling the trench, and a portion of the substrate being formed in a structure filling a remainder of the trench.
2. The light emitting device according to claim 1 , wherein the trench is formed in a portion of the second conductive semiconductor layer.
3. The light emitting device according to claim 1 , wherein the trench is formed in a portion of the second conductive semiconductor layer and the active layer.
4. The light emitting device according to claim 1 , wherein the trench is formed in a portion of the second conductive semiconductor layer, the active layer and the first conductive semiconductor layer.
5. The light emitting device according to claim 1 , wherein the trench exposes a portion of the first conductive semiconductor layer and the protruding portion of the second electrode penetrates into the second conductive semiconductor layer and the active layer, and extends into a portion of the first conductive semiconductor layer.
6. The light emitting device according to claim 1 , wherein the light emitting structure comprises a first roughness on a portion of the light emitting structure exposed by the trench, and a second roughness on a top surface of the reflection layer.
7. The light emitting device according to claim 6 , wherein the current barrier layer is on the first roughness and a side surface of the trench and the protruding portion of the second electrode comprises a second roughness on a top surface of the protruding portion.
8. The light emitting device according to claim 1 , wherein the current barrier layer comprises an amorphous layer.
9. The light emitting device according to claim 1 , wherein the current barrier layer includes a diffusion layer.
10. The light emitting device according to claim 9 , wherein the diffusion layer is conducted in a first conductive type.
11. The light emitting device according to claim 1 , wherein the first electrode and the current barrier layer partially overlap each other spatially and vertically.
12. The light emitting device according to claim 1 , wherein the active layer is removed at a region where the first electrode and the current barrier layer partially overlap each other spatially and vertically such that light is not emitted at the region.
13. The light emitting device according to claim 1 , wherein side surfaces of the trench are tilted at a predetermined angle.
14. The light emitting device according to claim 13 , wherein a width of a lower side of the trench is greater than a width of an upper side of the trench.
15. The light emitting device according to claim 1 , wherein the second electrode further comprises at least one of an ohmic layer and an adhesive layer.
16. The light emitting device according to claim 15 , wherein the ohmic layer comprises at least one of a single metal, a metal alloy and a metal oxide.
17. The light emitting device according to claim 15 , wherein the reflection layer comprises at least one of Al, Ag and an alloy including Al or Ag, and
wherein the reflection layer directly contacts the second conductive semiconductor layer.
18. The light emitting device according to claim 15 , wherein the substrate comprises at least one of Cu, a Cu alloy, Si, Mo and SiGe.
19. The light emitting device according to claim 1 , wherein the current barrier layer contacts the active layer.
20. The light emitting device according to claim 1 , wherein a lateral width of the current barrier layer is smaller than a lateral width of the second electrode.
21. The light emitting device according to claim 1 , wherein the first electrode overlaps with a top surface of the current barrier layer.
22. The light emitting device according to claim 1 , wherein the first electrode overlaps with a top surface of the reflection layer.