IP Library › Granted Patent US 9,142,749
Granted Patent B2
US 9,142,749 · App. 13/307,377 · Granted Sep 22, 2015

Thermoelectric conversion module

Inventors: Kazuaki Kurihara (Kawasaki, JP); Takuya Nishino (Kawasaki, JP); Takashi Suzuki (Kawasaki, JP)
Assignee: FUJITSU LIMITED
H01L35/16H01L35/32
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Quick Facts
Patent No.
US 9,142,749
App. No.
13/307,377
Granted
Sep 22, 2015
Kind
B2
Abstract

A thermoelectric conversion module includes: a first substrate having water permeability and thermal conductivity; a thermoelectric conversion element provided on the first substrate; a heat insulator having water permeability provided around the thermoelectric conversion element on the first substrate; and a second substrate disposed on the thermoelectric conversion element and the heat insulator and having water permeability and thermal conductivity.

Claims (15)

1. A thermoelectric conversion module, comprising:

a first substrate having water permeability and thermal conductivity, the first substrate comprises an upper surface, a lower surface opposite the upper surface, and a plurality of first through-holes extending from the lower surface of the first substrate to the upper surface of the first substrate;

a thermoelectric conversion element disposed on the upper surface of the first substrate, the thermoelectric conversion element being a pi type thermoelectric conversion element comprising an upper heat exchanger plate, a lower heat exchanger plate, and n-type semiconductor blocks and p-type semiconductor blocks alternately connected in series and disposed between the lower heat exchanger plate and the upper heat exchanger plate;

a heat insulator disposed on the upper surface of the first substrate provided only around a perimeter of the thermoelectric conversion element, the heat insulator having heat insulating properties and water permeability; and

a second substrate having water permeability and thermal conductivity disposed on the thermoelectric conversion element and the heat insulator, the second substrate comprising a lower surface, an upper surface, and a plurality of second through-holes extending from the lower surface of the second substrate to the upper surface of the second substrate,

wherein the upper heat exchanger plate and lower heat exchanger plate are disposed between the first substrate and second substrate;

wherein the thermoelectric conversion element and the heat insulator are disposed coplanar to each other, on the upper surface of the first substrate and below the lower surface of the second substrate, and

wherein an entire surface of the first substrate including the upper surface of the first substrate, lower surface of the first substrate, and inner walls of the first through holes and an entire surface of the second substrate including the upper surface of the second substrate, lower surface of the second substrate, and inner walls of the second through holes are hydrophilized.

2. The thermoelectric conversion module according to claim 1 , wherein the heat insulator has a continuous pore formed therein.

3. The thermoelectric conversion module according to claim 1 , wherein the first substrate and the second substrate contain copper, aluminum, aluminum alloy, or graphite.

4. The thermoelectric conversion module according to claim 2 , wherein an inner wall of the continuous pore has hydrophilicity.

5. The thermoelectric conversion module according to claim 1 , wherein the first substrate or the second substrate is formed with a porous sintered compact, a solid body of fibers containing metal or carbon fibers, or a woven body of fibers containing metal or carbon.

6. The thermoelectric conversion module according to claim 1 , wherein the heat insulator contains porous polyethylene.

7. The thermoelectric conversion module according to claim 1 , wherein the second substrate has a plurality of projections or grooves formed on the surface.

8. The thermoelectric conversion module according to claim 1 , wherein the thermoelectric conversion element is sealed by resin.

Assignments (3)
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 17, 2025
From: FUJITSU LIMITED
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 073964/0516 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Nov 27, 2024
From: FUJITSU LIMITED
To: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
Reel/Frame 069454/0333 →
ASSIGNMENT OF ASSIGNOR'S INTEREST Recorded Dec 29, 2011
From: KURIHARA, KAZUAKI; NISHINO, TAKUYA; SUZUKI, TAKASHI
To: FUJITSU LIMITED
Reel/Frame 027458/0281 →
Priority Claims (1)
JP 2011-036437 · Feb 22, 2011 · national
Continuity (1)
Related Publication 20120211044A1 · Aug 23, 2012