Thin film transistor array substrate, organic light-emitting display apparatus and method of manufacturing the thin film transistor array substrate
A thin film transistor array substrate includes: a substrate; a bottom gate electrode including a gate area doped with ion impurities and undoped areas on left and right sides of the gate area; an active layer on the bottom gate electrode with a first insulating layer therebetween and including a source contact region, a drain contact region, and an oxide semiconductor region; a top gate electrode on the active layer with a second insulating layer therebetween; and a source electrode in contact with the source contact region and a drain electrode in contact with the drain contact region, the source electrode and the drain electrode being on the top gate electrode with a third insulating layer therebetween. The oxide semiconductor region is between the source contact region and the drain contact region.
1. A thin film transistor array substrate comprising:
a substrate;
a bottom gate electrode comprising a gate area doped with ion impurities and undoped areas on left and right sides of the gate area;
an active layer on the bottom gate electrode with a first insulating layer therebetween and comprising a source contact region, a drain contact region, and an oxide semiconductor region;
a top gate electrode on the active layer with a second insulating layer therebetween; and
a source electrode in contact with the source, contact regign and a drain electrode in contact with the drain contact region, the source electrode and the drain electrode being on the top gate electrode with a third insulating layer therebetween,
wherein the oxide semiconductor region is between the source contact region and the drain contact region.
2. The thin film transistor array substrate of claim 1 , wherein the gate area does not overlap the source contact region or the drain contact region.
3. The thin film transistor array substrate of claim 1 , wherein the bottom gate electrode and the top gate electrode are connected to each other.
4. The thin film transistor array substrate of claim 1 , wherein the bottom gate electrode comprises amorphous silicon or poly silicon.
5. The thin film transistor array substrate of claim 1 , wherein a thickness of the first insulating layer or the second insulating layer is less than or equal to a thickness of the third insulating layer.
6. The thin film transistor array substrate of claim 1 , wherein a thickness of the top gate electrode is greater than or equal to a thickness of the source contact region or the drain contact region.
7. The thin film transistor array substrate of claim 1 , wherein a length of the oxide semiconductor region is less than or equal to a threshold value.
8. The thin film transistor array substrate of claim 1 , wherein the oxide semiconductor region comprises at least one oxide selected from gallium indium zinc oxide (G-I—Z—O), zinc (Zn), indium (In), gallium (Ga), tin (Sn) cadmium (Cd), germanium (Ge), hafnium (Hf), or a combination thereof.
9. An organic light-emitting display apparatus comprising:
a first transistor comprising a bottom gate electrode, a first active layer including a contact region and an oxide semiconductor region, a top gate electrode, a first source electrode, and a first drain electrode;
a second transistor comprising a second active layer of a same layer and of a same material as the bottom gate electrode, a gate electrode of a same layer and of a same material as the contact region, and a second source electrode and a second drain electrode of a same layer and of a same material as the first source electrode and the first drain electrode; and
a light-emitting device comprising a pixel electrode, an interlayer, and a counter electrode,
wherein the oxide semiconductor region is between a source contact region and a drain contact region of the contact region, and
wherein a region of the bottom gate electrode not overlapped by the source contact region or the drain contact region is doped with ion impurities.
10. The organic light-emitting display apparatus of claim 9 , wherein the bottom gate electrode comprises:
a gate area of a silicon semiconductor and doped with ion impurities; and
undoped areas on left and right sides of the gate area.
11. The organic light-emitting display apparatus of claim 9 , wherein the first transistor is a driving transistor of the organic light-emitting display apparatus, and the second transistor is a switching transistor of the organic light-emitting display apparatus.
12. The organic light-emitting display apparatus of claim 9 , wherein the first source electrode and the first drain electrode do not overlap the doped region of the bottom gate electrode.
13. The organic light-emitting display apparatus of claim 9 , further comprising a capacitor, wherein the capacitor comprises:
a first electrode of the same layer and of the same material as the contact region; and
a second electrode of .a same layer and of a same material as the top gate electrode.
14. The organic light-emitting display apparatus of claim 13 , wherein the capacitor further comprises a third, electrode of the same layer and of the same material as the first source and first drain electrodes.
15. The organic light-emitting display apparatus of claim 9 , wherein the bottom gate electrode comprises amorphous silicon or poly silicon.
16. The organic light-emitting display apparatus of claim 9 , wherein the second transistor comprises an auxiliary gate electrode of a same layer and of a same material as the top gate electrode.