Substrate support device

1. A substrate support device, comprising:

a plate section formed of a metal;

a shaft section connected to the plate section and formed of a metal;

a heating element provided in the plate section;

a first insulating film formed on a first surface of the plate section, the first surface opposite to the shaft section, by ceramic thermal spraying; and

a second insulating film formed on a second surface of the plate section which intersects the first surface of the plate section approximately perpendicularly, by ceramic thermal spraying,

wherein:

the first surface of the plate section has a recessed portion;

an edge between the recessed portion and a peripheral non-recessed portion of the first surface has a curvature rounded off so as to be curved outward, and an edge between the first surface and the second surface has a curvature rounded off so as to be curved outward;

the first and second insulating films are insulating films as thin as possible in a range to achieve a desired withstand voltage;

the second surface of the plate section has a portion having a curvature, and having a value nearly equal to a thickness of the plate section, which is curved outward toward a third surface of the plate section, the third surface being connected to the shaft section;

the second insulating film is gradually thinner from the second surface of the plate section toward a connection position with the shaft section on the third surface; and

the first insulating film connects the second insulating film on the edge between the first surface and the second surface, a connection part of the first insulating film and the second insulating film has a curvature rounded off so as to be curved outward.

2. The substrate support device according to claim 1 , wherein the first and second insulating films are formed of a material being ceramic-thermal-sprayed, the material of the first and second insulating films is selected from an oxide of at least one of alkaline earth metals, rare-earth metals, Al, Ta and Si, a difference in the coefficient of thermal expansion between the plate section and the first and second insulating films is small.

3. The substrate support device according to claim 2 , wherein the material of the first and second insulating films is selected from aluminum oxide (Al 2 O 3 ), magnesium oxide (MgO) and yttrium oxide (Y 2 O 3 ).

4. The substrate support device according to claim 3 , wherein a material of the plate section is aluminum (Al) and the material of the first and second insulating films is aluminum oxide.

5. The substrate support device according to claim 4 , wherein the thickness of the first and second insulating films is 100 μm or larger and 200 μm or less.

6. The substrate support device according to claim 2 , wherein the first and second insulating films formed by ceramic thermal spraying have a stoichiometric composition or a composition close thereto.

7. The substrate support device according to claim 1 , further comprising a buffer layer formed between the plate section and the first and second insulating films.

8. The substrate support device according to claim 7 , wherein the buffer layer is made of magnesium oxide (MgO).

9. A substrate support device, comprising:

a plate section formed of a metal;

a shaft section connected to the plate section and formed of a metal;

a heating element provided in the plate section;

a first insulating film formed on a first surface of the plate section, the first surface opposite to the shaft section, by ceramic thermal spraying;

a second insulating film formed on a second surface of the plate section which intersects the first surface of the plate section approximately perpendicularly, by ceramic thermal spraying; and

a third insulating film formed on a third surface of the plate section by ceramic thermal spraying, the third surface being connected to the shaft section,

wherein:

the first surface of the plate section has a recessed portion;

an edge between the recessed portion and a peripheral non-recessed portion of the first surface has a curvature rounded off so as to be curved outward, an edge between the first surface and the second surface has a curvature rounded off so as to be curved outward and an edge between the second surface and the third surface has a curvature rounded off so as to be curved outward;

the first, second and third insulating films are insulating films as thin as possible in a range to achieve a desired withstand voltage,

the first insulating film connects the second insulating film on the edge between the first surface and the second surface a connection part of the first insulating film and the second insulating film has a curvature rounded off so as to be curved outward; and

the second insulating film connects the third insulating film on the edge between the second surface and the third surface, a connection part of the second insulating film and the third insulating film has a curvature rounded off so as to be curved outward.

10. The substrate support device according to claim 9 , wherein the first and second insulating films are formed of a material being ceramic-thermal-sprayed, the material of the first and second insulating films is selected from an oxide of at least one of alkaline earth metals, rare-earth metals, Al, Ta and Si, a difference in the coefficient of thermal expansion between the plate section and the first and second insulating films is small.

11. The substrate support device according to claim 10 , wherein the material of the first and second insulating films is selected from aluminum oxide (Al 2 O 3 ), magnesium oxide (MgO) and yttrium oxide (Y 2 O 3 ).

12. The substrate support device according to claim 11 , wherein a material of the plate section is aluminum (Al) and the material of the first and second insulating films is aluminum oxide.

13. The substrate support device according to claim 12 , wherein the thickness of the first and second insulating films is 100 μm or larger and 200 μm or less.

14. The substrate support device according to claim 10 , wherein the first and second insulating films formed by ceramic thermal spraying have a stoichiometric composition or a composition close thereto.

15. The substrate support device according to claim 9 , further comprising a buffer layer formed between the plate section and the first and second insulating films.

16. The substrate support device according to claim 15 , wherein the buffer layer is made of magnesium oxide (MgO).