Metal-oxide-metal (MOM) capacitor with enhanced capacitance

1. A metal-oxide-metal (MOM) capacitor device comprising:

a conductive gate material coupled to a substrate;

a first metal structure coupled to the conductive gate material; and

a second metal structure coupled to the substrate and proximate to the first metal structure, wherein the second metal structure includes a contact metal, wherein the contact metal includes at least one material not in common with the conductive gate material, and wherein the second metal structure is coupled to a higher metal structure by a via structure.

2. The MOM capacitor device of claim 1 , further comprising a gate dielectric layer coupling the conductive gate material to the substrate.

3. The MOM capacitor device of claim 1 , wherein the conductive gate material is coupled to a shallow trench isolation (STI) portion of the substrate.

4. The MOM capacitor device of claim 1 , wherein the conductive gate material is coupled to a silicon portion of the substrate.

5. The MOM capacitor device of claim 1 , wherein, when a first electrode that includes the conductive gate material and the first metal structure is biased by a first voltage and a second electrode that includes the second metal structure is based by a second voltage, a total capacitance between the first electrode and the second electrode includes a capacitance between the conductive gate material and the contact metal.

6. The MOM capacitor device of claim 1 , wherein a gate-to-contact pitch between the conductive gate material and the contact metal is a minimum allowed by a design rule.

7. The MOM capacitor device of claim 1 , wherein a gate-to-contact pitch between the conductive gate material and the contact metal is less than a contact-to-contact pitch between two adjacent contact metals and is less than a gate-to-gate pitch between two adjacent conductive gate materials.

8. The MOM capacitor device of claim 1 , wherein the conductive gate material, the first metal structure, and the second metal structure are integrated in at least one semiconductor die.

9. The MOM capacitor device of claim 1 , further comprising a set top box, a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant (PDA), a fixed location data unit, a computer, or a combination thereof, into which the conductive gate material, the first metal structure, and the second metal structure are integrated.

10. A method of forming a metal-oxide-metal (MOM) capacitor device, the method comprising:

forming a first electrode, wherein the first electrode includes a conductive gate material coupled to a substrate;

forming a second electrode coupled to the substrate and proximate to the first electrode, wherein the second electrode includes a metal structure that includes a contact metal, and wherein the contact metal includes at least one material not in common with the conductive gate material; and

forming a via structure that couples the metal structure to a higher metal structure.

11. The method of claim 10 , wherein a gate-to-contact pitch between the conductive gate material and the contact metal is a minimum allowed by a design rule.

12. The method of claim 10 , wherein a gate-to-contact pitch between the conductive gate material and the contact metal is less than a contact-to-contact pitch between two adjacent contact metals and is less than a gate-to-gate pitch between two adjacent conductive gate materials.

13. The method of claim 10 , wherein forming the first electrode and forming the second electrode are initiated by a processor integrated into an electronic device.

14. A metal-oxide-metal (MOM) capacitor device comprising:

first means for conducting charge coupled to a substrate, wherein the first means for conducting charge corresponds to a first capacitor plate, wherein the first means for conducting charge includes a conductive gate material;

second means for conducting charge coupled to the substrate, wherein the second means for conducting charge corresponds to a second capacitor plate, wherein the second means for conducting charge includes a contact metal, wherein the contact metal includes at least one material not in common with the conductive gate material, and wherein the first means for conducting charge is proximate to the second means for conducting charge; and

third means for conducting charge coupling the contact metal to a higher metal structure.

15. The MOM capacitor device of claim 14 , further comprising a gate oxide layer coupling the first means for conducting charge to the substrate.

16. The MOM capacitor device of claim 14 , wherein the first means for conducting charge is coupled to a silicon portion of the substrate.

17. The MOM capacitor device of claim 14 , wherein the first means for conducting charge is coupled to a shallow trench isolation (STI) portion of the substrate.

18. The MOM capacitor device of claim 14 , wherein the first means for conducting charge and the second means for conducting charge are integrated in at least one semiconductor die.

19. The MOM capacitor device of claim 14 , further comprising a set top box, a music player, a video player, an entertainment unit, a navigation device, a communications device, a personal digital assistant (PDA), a fixed location data unit, a computer, or a combination thereof, into which the first means for conducting charge and the second means for conducting charge are integrated.

20. A non-transitory computer-readable medium comprising processor-executable instructions that, when executed by a processor, cause the processor to:

initiate fabrication of a metal-oxide-metal (MOM) capacitor device, the MOM capacitor device fabricated by:

forming a first electrode, wherein the first electrode includes a conductive gate material; and

forming a second electrode, wherein the second electrode includes a contact metal, wherein the contact metal includes at least one material not in common with the conductive gate material, wherein the first electrode is proximate to the second electrode, and wherein the first electrode is coupled to a first higher metal structure by a first via structure.

21. The non-transitory computer-readable medium of claim 20 , wherein a gate-to-contact pitch between the conductive gate material and the contact metal is a minimum allowed by a design rule.

22. The non-transitory computer-readable medium of claim 20 , wherein a gate-to-contact pitch between the conductive gate material and the contact metal is less than a contact-to-contact pitch between two adjacent contact metals or a gate-to-gate pitch between two adjacent conductive gate materials.

23. A method comprising:

receiving a data file including design information corresponding to a semiconductor device; and fabricating the semiconductor device according to the design information, wherein the semiconductor device includes a metal-oxide-metal (MOM) capacitor, the MOM capacitor including:

a conductive gate material coupled to a substrate;

a first metal structure coupled to the conductive gate material; and

a second metal structure coupled to the substrate and proximate to the first metal structure, wherein the second metal structure includes a contact metal, wherein the contact metal includes at least one material not in common with the conductive gate material, and wherein the first metal structure is coupled to a first higher metal structure by a first via structure.

24. The method of claim 23 , wherein the data file has a GDSII format.

25. The method of claim 23 , wherein the data file has a GERBER format.