Thin film transistor and method for manufacturing the same
Provided are a thin film transistor and a method for manufacturing the same. The thin film transistor manufacturing method includes forming a gate electrode on a substrate, forming an active layer that is adjacent to the gate electrode and includes an oxide semiconductor, forming an oxygen providing layer on the active layer, forming a gate dielectric between the gate electrode and the active layer, forming source and drain electrodes coupled to the active layer, forming a planarizing layer covering the gate electrode and the gate dielectric, forming a hole exposing the active layer, and performing a heat treatment process onto the planarizing layer in an atmosphere of oxygen.
1. A method for manufacturing a thin film transistor, comprising:
forming a gate electrode on a substrate;
forming an active layer that is adjacent to the gate electrode and comprises an oxide semiconductor;
forming an oxygen providing layer on the active layer;
forming a gate dielectric between the gate electrode and the active layer;
forming source and drain electrodes coupled to the active layer;
forming a planarizing layer covering the gate electrode and the gate dielectric;
forming a hole in the planarizing layer exposing the active layer; and
performing a heat treatment process onto the planarizing layer in an atmosphere of oxygen, thereby providing oxygen atoms of the atmosphere of oxygen to the active layer though the hole.
2. The method of claim 1 , wherein the oxygen providing layer comprises a metal oxide that emits oxygen at a first temperature.
3. The method of claim 2 , wherein the oxygen providing layer comprises AgO.
4. The method of claim 2 , wherein the heat treatment process is performed at a second temperature higher than the first temperature.
5. The method of claim 1 , wherein oxygen atoms in the oxygen providing layer are supplied into the active layer by the heat treatment process.
6. The method of claim 1 , wherein the hole in the planarizing layer passes through the gate dielectric and the oxygen providing layer to expose a part of an upper surface of the active layer.
7. The method of claim 1 , further comprising forming a buffer layer on the substrate.
8. The method of claim 1 , wherein the forming of the gate dielectric comprises:
forming a first insulating layer between the gate electrode and the active layer;
forming a second insulating layer on the first insulating layer; and
forming a third insulating layer between the first insulating layer and the second insulating layer,
wherein the first and second insulating layers comprise inorganic materials and the third insulating layer comprises organic materials.
9. The method of claim 1 , wherein the hole in the planarizing layer passes through the oxygen providing layer.
10. A method for manufacturing a thin film transistor, comprising:
forming a gate electrode on a substrate;
forming an active layer that is adjacent to the gate electrode and comprises an oxide semiconductor;
forming an oxygen providing layer on the active layer;
forming a gate dielectric between the gate electrode and the active layer;
forming source and drain electrodes coupled to the active layer;
forming a planarizing layer covering the gate electrode and the gate dielectric;
forming a hole exposing the active layer; and
performing a heat treatment process onto the planarizing layer in an atmosphere of oxygen,
wherein oxygen atoms from the atmosphere of oxygen are supplied into the active layer through the hole.
11. The method of claim 10 , wherein the hole passes through the planarizing layer and the oxygen providing layer.
12. The method of claim 11 , wherein the hole further passes through the gate dielectric.
13. A method for manufacturing a thin film transistor, comprising:
forming a gate electrode on a substrate;
forming an active layer that is adjacent to the gate electrode and comprises an oxide semiconductor;
forming an oxygen providing layer on the active layer;
forming a gate dielectric between the gate electrode and the active layer;
forming source and drain electrodes coupled to the active layer;
forming a planarizing layer covering the gate electrode and the gate dielectric;
forming a hole exposing the active layer; and
performing a heat treatment process onto the planarizing layer in an atmosphere of oxygen, thereby providing oxygen from the atmosphere of oxygen to the active layer through the hole,
wherein the hole passes through the planarizing layer, the gate dielectric, and the oxygen providing layer to expose a part of an upper surface of the active layer.