Power semiconductor device and edge terminal structure thereof including an L-shaped electric-plate

1. An edge terminal structure of a trench power semiconductor device, wherein the power semiconductor device comprises an active area and an edge terminal area, the edge terminal structure comprising:

a substrate, wherein a trench being located in a surface of the substrate in the edge terminal area beside the active area;

a first electrode located on the surface of the substrate and extends from the active area to the trench;

a second electrode located on a back of the substrate;

a first field plate disposed on a sidewall of the trench and extending toward a tail of the trench, wherein the first field plate comprises at least an L-shaped electric-plate, a gate insulation layer below the L-shaped electric-plate, and the first electrode on the L-shaped electric-plate, wherein the L-shaped electric-plate has a tail end in the trench away from the sidewall of the trench; and

a second field plate disposed within the trench outside the L-shaped electric-plate, the second field plate comprises a portion of the first electrode and at least an insulation layer between the portion of the first electrode and the substrate, wherein the insulation layer covers the tail of the trench and extends to cover only a portion of the tail end of the L-shaped electric-plate, and the gate insulation layer is further disposed below the insulation layer outside the L-shaped electric-plate, and a length of the second field plate is 5 μm-20 μm such that a depletion region is formed and expanded according to the length of the second field plate.

2. The edge terminal structure of the trench power semiconductor device as recited in claim 1 , wherein the trench power semiconductor device is a trench metal oxide semiconductor barrier Schottky diode, the first electrode is in direct contact with a surface of the L-shaped electric-plate, and the substrate comprises:

a first conductive-type substrate; and

a first conductive-type epitaxial layer formed on the first conductive-type substrate.

3. The edge terminal structure of the trench power semiconductor device as recited in claim 2 , wherein the second electrode is a cathode, and the first electrode comprises:

a barrier Schottky metal layer; and

an anode metal layer disposed on the barrier Schottky metal layer.

4. The edge terminal structure of the trench power semiconductor device as recited in claim 2 , wherein a thickness of the insulation layer of the second field plate is greater than a thickness of the gate insulation layer of the first field plate.

5. The edge terminal structure of the trench power semiconductor device as recited in claim 2 , wherein the gate insulation layer further extends below the insulation layer of the second field plate, and a total thickness of the insulation layer of the second field plate and the gate insulation layer is greater than a thickness of the gate insulation layer of the first field plate.

6. A trench power semiconductor device having an active area and an edge terminal area and comprising:

a substrate, a trench being formed on a surface of the substrate in the edge terminal area beside the active area;

a trench gate located in the surface of the substrate in the active area;

a first electrode located at the active area and on the surface of the substrate in the edge terminal area, wherein the first electrode covers the trench gate and extends from the active area to the trench;

a second electrode located on a back of the substrate;

a first field plate disposed on a sidewall of the trench and extending toward a tail of the trench, the first field plate comprises at least an L-shaped electric-plate, a gate insulation layer below the L-shaped electric-plate, and the first electrode on the L-shaped electric-plate, wherein the L-shaped electric-plate has a tail end in the trench away from the sidewall of the trench; and

a second field plate disposed within the trench outside the L-shaped electric-plate, the second field plate comprises a portion of the first electrode and at least an insulation layer between the portion of the first electrode and the substrate, wherein the insulation layer covers the tail of the trench and extends to cover only a portion of the tail end of the L-shaped electric-plate, and the gate insulation layer is further disposed below the insulation layer outside the L-shaped electric-plate, and a length of the second field plate is 5 μm-20 μm such that a depletion region is formed and expanded according to the length of the second field plate.

7. The trench power semiconductor device as recited in claim 6 , wherein the trench power semiconductor device is a trench metal oxide semiconductor barrier Schottky diode, the first electrode is in direct contact with a surface of the L-shaped electric-plate, and the substrate comprises:

a first conductive-type substrate; and

a first conductive-type epitaxial layer formed on the first conductive-type substrate.

8. The trench power semiconductor device as recited in claim 7 , wherein the second electrode is a cathode, and the first electrode comprises:

a barrier Schottky metal layer; and

an anode metal layer disposed on the barrier Schottky metal layer.

9. The trench power semiconductor device as recited in claim 7 , wherein a thickness of the insulation layer of the second field plate is greater than a thickness of the gate insulation layer of the first field plate.

10. The trench power semiconductor device as recited in claim 7 , wherein the gate insulation layer further extends below the insulation layer of the second field plate, and a total thickness of the insulation layer of the second field plate and the gate insulation layer is greater than a thickness of the gate insulation layer of the first field plate.