IP Library › Granted Patent US 9,155,498
Granted Patent B2
US 9,155,498 · App. 14/458,913 · Granted Oct 13, 2015

Living body sensor for obtaining information of a living body

Inventor: Masahiko Akiyama (Tokyo, JP)
Assignee: KABUSHIKI KAISHA TOSHIBA
A61B5/1455A61B5/6801H01L27/288H01L27/3244H01L31/167H01L27/3269
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Quick Facts
Patent No.
US 9,155,498
App. No.
14/458,913
Granted
Oct 13, 2015
Kind
B2
Abstract

According to one embodiment, a photoelectric conversion device including a substrate having opaque interconnection layers, an insulating film formed on the substrate, and having a plurality of openings, light-emitting elements formed of the openings, each light-emitting element having an upper electrode layer, and light-receiving elements formed of the openings, each light-receiving element having an upper electrode layer, wherein a semiconductor material is different in the light-emitting element and the light-receiving element, the upper electrode layer both of the light-emitting element and the light-receiving element are formed as common electrodes, and each interconnection layer is formed on a region outside a region specified by the opening.

Claims (28)

1. A sensor comprising:

light-emitting elements respectively formed in some of a plurality of pixel regions on a substrate, the light-emitting elements irradiating an interior of a living body with light;

light-receiving elements respectively formed in some of remaining pixels of the plurality of pixel regions, the light-receiving elements each comprising:

a sensor light-receiving element receiving the light emitted from the light-emitting element and reflected from the interior of the living body; and

a monitor light-receiving element directly measuring some of the light emitted from the light-emitting element without emerging the light outside the substrate;

a light-emitting element active matrix layer for driving the light-emitting element, formed on the substrate and including a thin-film transistor and an interconnection; and

a light-receiving element active matrix layer for driving the light-receiving element, formed on the substrate and including a thin-film transistor and an interconnection,

the sensor being configured

to receive the light reflected from the interior of the living body and obtained when some first light-emitting elements of the light-emitting elements are driven at a first timing by the sensor light-receiving elements surrounding the driven light-emitting elements, and

to receive the light reflected from the interior of the living body and obtained when second light-emitting elements other than the driven first light-emitting elements are driven at a second timing different from the first timing by the sensor light-receiving elements surrounding the second light-emitting elements.

2. The sensor of claim 1 , wherein the substrate is a flexible substrate.

3. The sensor of claim 1 , wherein

the light-emitting element active matrix layer includes a controlling transistor and a driving transistor and operates on the light-emitting element by the driving transistor to emit light even during a period of time when the controlling transistor is in an off-state.

4. The sensor of claim 1 , further comprising a driving transistor, a controlling transistor, a light-emitting element signal line, a light-emitting element scan line, and a power supply line, wherein

a source of the controlling transistor is connected to the light-emitting element signal line, a drain of the controlling transistor is connected to a gate of the driving transistor, a gate of the controlling transistor is connected to the light-emitting element scan line, a source of the driving transistor is connected to the power supply line, and a drain of the driving transistor is connected to an anode of the light-emitting element.

5. The sensor of claim 1 , wherein the substrate is transparent, and the light-emitting element emits light to a side of the substrate and the light-receiving element receives light from the side of the substrate.

6. A living body sensor comprising:

a substrate including opaque interconnection layers;

an insulating film formed on the substrate, the insulating film including a plurality of openings which are separated apart in a substrate in-plane direction;

light-emitting elements respectively formed in some of the plurality of openings, each light-emitting element including a light-emitting layer formed of a semiconductor material and an upper electrode layer;

light-receiving elements respectively formed in some of remaining openings of the plurality of openings, each light-receiving element including a light-receiving layer formed of a semiconductor material and an upper electrode layer,

a light-emitting element active matrix layer for driving the light-emitting element, formed on the substrate and including a thin-film transistor and an interconnection; and

a light-receiving element active matrix layer for driving the light-receiving element, formed on the substrate and including a thin-film transistor and an interconnection, the living body sensor being configured

to drive some light-emitting elements of the light-emitting elements at a first timing, to irradiate an interior of a living body with light from the driven light-emitting elements and to receive the light reflected from the interior of the living body by the light-receiving elements surrounding the driven light-emitting elements; and

to drive the light-emitting elements other than the driven light-emitting elements at a second timing different from the first timing, to irradiate the interior of the living body with light from the other light-emitting elements and to receive the light reflected from the interior of the living body by the light-receiving elements surrounding the other light-emitting elements.

7. The sensor of claim 6 , wherein

the interior of the living body is irradiated with the light from the light-emitting element through the substrate, and the light from the interior of the living body is received by the light-receiving element through the substrate, and

the semiconductor material of the light-emitting element is different from the semiconductor material of the light-receiving element, the upper electrode layer of the light-emitting element and the upper electrode layer of the light-receiving element are formed as common electrodes, and each interconnection layer is formed on a region outside a region specified by the opening and in a position separated from the openings of the insulating film by distances twice or more of distances corresponding to thicknesses of the insulating film.

Priority Claims (1)
JP 2011-209848 · Sep 26, 2011 · national
Continuity (2)
Division 13487618 · Jun 4, 2012
Related Publication 20140350366A1 · Nov 27, 2014