Elimination of first wafer effect for PECVD films
The present invention generally provides an apparatus and method for eliminating the “first wafer effect” for plasma enhanced chemical vapor deposition (PECVD). One embodiment of the present invention provides a method for preparing a chamber after the chamber being idle for a period of time. The method comprises a cleaning step followed by a season step and a heating step adapted to the length of the idle time.
1. A method for preparing a chamber after the chamber being idle for a period of time, comprising:
prior to introducing a substrate into the chamber, seasoning a liquid flow meter by flowing a liquid precursor through the liquid flow meter with radio frequency power turned off for a given period of time;
cleaning the chamber using a first active species;
seasoning the chamber by delivering a first gas mixture while applying radio frequency power to the first gas mixture; and
after seasoning the chamber and prior to introduction of the substrate, stabilizing at least a portion of a showerhead assembly within the chamber by alternately heating and cooling at least the portion of the showerhead assembly.
2. The method of claim 1 , wherein the alternately heating and cooling at least the portion of the showerhead assembly comprises:
repeating delivering a heating gas to at least the portion of the showerhead assembly with radio frequency power and delivering the heating gas to at least the portion of the showerhead assembly without radio frequency power.
3. The method of claim 2 , wherein the heating gas comprises helium, argon, nitrogen, oxygen, or a combination thereof.
4. The method of claim 1 , wherein the first active species is generated using a remote plasma source.
5. A method for depositing a film on a substrate in a chamber, comprising:
prior to introducing a substrate into the chamber, seasoning a liquid flow meter by flowing a first precursor through the liquid flow meter with radio frequency power turned off for a given period of time;
cleaning the chamber by delivering an active species to the chamber;
seasoning the chamber by delivering a first gas mixture comprising the first precursor to the chamber while applying radio frequency power to the first gas mixture;
after seasoning the chamber, heating at least a portion of a showerhead assembly by delivering a heating gas to at least the portion of the showerhead assembly while applying radio frequency power to the heating gas;
cooling at least the portion of the showerhead assembly by delivering the heating gas to at least the portion of the showerhead assembly without applying radio frequency power to the heating gas; and
introducing the substrate into the chamber and then depositing a film on the substrate by delivering a second gas mixture comprising the first precursor to the chamber while applying radio frequency power to the second gas mixture.
6. The method of claim 5 , wherein the active species is generated from a halogen containing gas.
7. The method of claim 1 , wherein the liquid precursor comprises octamethylcyclotetrasiloxane (OMCTS).
8. The method of claim 1 , wherein the liquid precursor is flown through the liquid flow meter for about 2 minutes to about 5 minutes.
9. The method of claim 5 , wherein the first precursor comprises octamethylcyclotetrasiloxane (OMCTS).
10. The method of claim 5 , wherein the first precursor is flown through the liquid flow meter for about 2 minutes to about 5 minutes.
11. A method for depositing a film on a substrate in a chamber, the method is performed in a following sequence comprising:
seasoning a liquid flow meter by flowing a first precursor through the liquid flow meter with radio frequency power turned off for a given period of time;
cleaning the chamber by delivering an active species to the chamber;
seasoning the chamber by delivering a first gas mixture comprising the first precursor to the chamber while applying radio frequency power to the first gas mixture to deposit a seasoning layer on an interior surface of the chamber;
prior to introduction of the substrate, stabilizing at least a portion of a showerhead assembly within the chamber by delivering a heating gas to at least the portion of the showerhead assembly while periodically turning on and off radio frequency power applied to the heating gas; and
depositing a film on the substrate by delivering a second gas mixture comprising the first precursor to the chamber while applying radio frequency power to the second gas mixture.
12. The method of claim 11 , wherein seasoning the liquid flow meter is performed without the presence of the substrate.
13. The method of claim 1 , wherein the portion of the showerhead assembly comprises a faceplate disposed opposite to a heater pedestal.
14. The method of claim 1 , wherein the heating is performed for about 30 seconds and the cooling is performed for about 10 seconds.
15. The method of claim 5 , wherein the heating gas comprises helium, argon, nitrogen, oxygen, or a combination thereof.
16. The method of claim 5 , wherein the heating the at least the portion of the showerhead assembly is performed for about 30 seconds and the cooling the portion of the showerhead assembly is performed for about 10 seconds.
17. The method of claim 5 , wherein the portion of the showerhead assembly comprises a faceplate disposed opposite to a heater pedestal.
18. The method of claim 11 , wherein the portion of the showerhead assembly comprises a faceplate disposed opposite to a heater pedestal.
19. The method of claim 11 , wherein the stabilizing the at least the portion of the showerhead assembly is performed for about 10 seconds to about 30 seconds.