Semiconductor die package and method for making the same
Semiconductor die packages are disclosed. An exemplary semiconductor die package includes a premolded substrate. The premolded substrate can have a semiconductor die attached to it, and an encapsulating material may be disposed over the semiconductor die.
1. A semiconductor device package comprising:
a substrate comprising a conductive die attach surface;
a high side transistor including a high side transistor input, wherein the high side transistor input is coupled to the conductive die attach surface;
a low side transistor including a low side transistor output, wherein the low side transistor input is coupled to the conductive die attach surface; and
a controller chip mounted on the substrate and connected to the high side and low side transistors to control their operation.
2. The semiconductor die package of claim 1 further comprising:
an encapsulating material formed around the high side transistor and the low side transistor.
3. The semiconductor die package of claim 1 wherein the high side transistor is a high side MOSFET and the high side transistor input is a high side transistor source connection.
4. The semiconductor die package of claim 1 wherein the low side transistor is a low side MOSFET and the low side transistor output is a low side transistor drain connection.
5. The semiconductor die package of claim 1 wherein the high side transistor is a high side MOSFET and the low side transistor is a low side MOSFET and the low side transistor output is a low side transistor drain connection.
6. The semiconductor die package of claim 1 wherein the conductive die attach surface is part of a leadframe.
7. The semiconductor die package of claim 1 wherein the substrate comprises a molding material that has an exterior surface that is substantially coplanar with the conductive die attach surface.
8. The semiconductor die package of claim 1 wherein the high side transistor has a high side transistor output, wherein the high side transistor output is distal to the conductive die attach surface and the high side transistor input is proximate the conductive die attach surface and wherein the package further comprises a clip or wirebond coupling the high side transistor output to external leads.
9. The semiconductor die package of claim 1 wherein the high side transistor has a high side transistor output, wherein the high side transistor output is distal to the conductive die attach surface and the high side transistor input is proximate the conductive die attach surface and wherein the package further comprises a clip or wirebond coupling the high side transistor output to external leads, and wherein the high and low side transistors are both power MOSFETs.